VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers

A. Hiraiwa, J. Yugami, S. Ihjima, T. Kusaka, Y. Ohji

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)2386
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume34
Issue number11
DOIs
Publication statusPublished - 1987
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this