VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers

A. Hiraiwa, J. Yugami, S. Ihjima, T. Kusaka, Y. Ohji

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)2386
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume34
Issue number11
DOIs
Publication statusPublished - 1987
Externally publishedYes

Fingerprint

Hall effect
Silicon nitride
Silicon Dioxide
Charge transfer
Silica
silicon nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers. / Hiraiwa, A.; Yugami, J.; Ihjima, S.; Kusaka, T.; Ohji, Y.

In: IEEE Transactions on Electron Devices, Vol. 34, No. 11, 1987, p. 2386.

Research output: Contribution to journalArticle

Hiraiwa, A. ; Yugami, J. ; Ihjima, S. ; Kusaka, T. ; Ohji, Y. / VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers. In: IEEE Transactions on Electron Devices. 1987 ; Vol. 34, No. 11. pp. 2386.
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