Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone: Direct evidence for less strained Si-O-Si bond angle

Ken Nakamura; Shingo Ichimura

doi:10.1143/JJAP.44.7602

Vibrational spectroscopic study of the interface of SiO₂/Si(100) fabricated by highly concentrated ozone: Direct evidence for less strained Si-O-Si bond angle

Ken Nakamura^*, Shingo Ichimura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The interface structure of SiO₂/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm^-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

Original language	English
Pages (from-to)	7602-7604
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7602
Publication status	Published - 2005 Oct 11
Externally published	Yes

Keywords

Infrared absorption spectroscopy
Ozone
Silicon
Silicon oxide
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.44.7602

Cite this

Vibrational spectroscopic study of the interface of SiO₂/Si(100) fabricated by highly concentrated ozone : Direct evidence for less strained Si-O-Si bond angle. / Nakamura, Ken; Ichimura, Shingo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 10, 11.10.2005, p. 7602-7604.

Research output: Contribution to journal › Article › peer-review

@article{7bac6c149d99483e9350157814b45a5d,

title = "Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone: Direct evidence for less strained Si-O-Si bond angle",

abstract = "The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.",

keywords = "Infrared absorption spectroscopy, Ozone, Silicon, Silicon oxide, X-ray photoelectron spectroscopy",

author = "Ken Nakamura and Shingo Ichimura",

year = "2005",

month = oct,

day = "11",

doi = "10.1143/JJAP.44.7602",

language = "English",

volume = "44",

pages = "7602--7604",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone

T2 - Direct evidence for less strained Si-O-Si bond angle

AU - Nakamura, Ken

AU - Ichimura, Shingo

PY - 2005/10/11

Y1 - 2005/10/11

N2 - The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

AB - The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

KW - Infrared absorption spectroscopy

KW - Ozone

KW - Silicon

KW - Silicon oxide

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=31544463562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31544463562&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.7602

DO - 10.1143/JJAP.44.7602

M3 - Article

AN - SCOPUS:31544463562

SN - 0021-4922

VL - 44

SP - 7602

EP - 7604

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 10

ER -