Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone: Direct evidence for less strained Si-O-Si bond angle

Ken Nakamura, Shingo Ichimura

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

Original languageEnglish
Pages (from-to)7602-7604
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
Publication statusPublished - 2005 Oct 11
Externally publishedYes

Fingerprint

Ozone
ozone
Oxide films
transition layers
oxide films
Stretching
Infrared spectroscopy
infrared spectroscopy
Gases
vibration
gases
Hot Temperature

Keywords

  • Infrared absorption spectroscopy
  • Ozone
  • Silicon
  • Silicon oxide
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.",
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T2 - Direct evidence for less strained Si-O-Si bond angle

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AU - Ichimura, Shingo

PY - 2005/10/11

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N2 - The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

AB - The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

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KW - Silicon

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KW - X-ray photoelectron spectroscopy

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