Vibrational spectroscopic study of the interface of SiO2/Si(100) fabricated by highly concentrated ozone: Direct evidence for less strained Si-O-Si bond angle

Ken Nakamura, Shingo Ichimura

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The interface structure of SiO2/Si(100) synthesized with a highly concentrated ozone gas was analyzed by Fourier-transformed infrared absoption spectroscopy (FT-IR). The position of a transverse optical (TO) phonon peak of Si-O-Si asymmetric stretching vibration, which is a function of a Si-O-Si bond angle, remains constant at 1065 cm-1 within a ∼2 nm thickness of an ozone-oxide film. This result indicates that the thickness of structural transition layers at this interface where the Si-O-Si angle is distorted due to the stress at the interface is considerably limited, which is in contrast to a thermal oxide film on Si(100) showing the existence of structural transition layers.

Original languageEnglish
Pages (from-to)7602-7604
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
Publication statusPublished - 2005 Oct 11
Externally publishedYes

Keywords

  • Infrared absorption spectroscopy
  • Ozone
  • Silicon
  • Silicon oxide
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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