Visible electroluminescence in hydrogenated amorphous silicon oxynitride

Hiromitsu Kato, Akira Masuzawa, Hidefumi Sato, Takashi Noma, Kwang Soo Seol, Makoto Fujimaki, Yoshimichi Ohki

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The mechanism of electroluminescence in hydrogenated amorphous silicon oxynitride was investigated. The luminescence can be observed only in the samples with high nitrogen content and annealed at high temperatures. It depends on the direction of the applied electric field, and its peak photon energy decreases from 2.3 to 1.8 eV as the nitrogen content increases. From the measurements of conduction current and Fourier transform infrared absorption spectroscopy, it was found that the electrical conduction in the electric field region where the luminescence was observed is governed by the Poole-Frenkel process at the defect centers induced by the high temperature annealing. The electroluminescence is considered to be caused by electronic transition between the band-tail states, at least one of which is related to N or Si-N bonds.

Original languageEnglish
Pages (from-to)2216-2220
Number of pages5
JournalJournal of Applied Physics
Volume90
Issue number5
DOIs
Publication statusPublished - 2001 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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