Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2

Hiroyuki Nishikaw, Eiki Watanabe, Daisuke Ito, Yuryo Sakurai, Kaya Nagasawa, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    118 Citations (Scopus)

    Abstract

    Visible photoluminescence (PL) bands around 2 eV were studied in 60Co γ-irradiated (dose<1 MGy) oxygen-deficient-type amorphous SiO2 (a-SiO2) excited by 2-4 eV photons. In addition to the well-known 1.9 eV PL band due to nonbridging oxygen note centers, another PL band was observed at 2.2 eV when excited by 3.8 eV photons. The intensity of the 2.2 eV band increases with decreasing oxygen partial pressure during the sample preparation. Electron-spin-resoaance measurements show that the intensity of the 2.2 eV band is correlated with the concentration of the E'δ center. a paramagnetic state of a cluster of silicons. After much higher δ irradiation with a dose up to 10 MGy, a new PL band was induced at 1.75 eV under excitation by 2.5 eV photons, as well as the 1.9 and 2.2 eV PL bands. By comparing its spectral shape and excitation energy with known PL band in Si-implanted a-SiO2, it is suggested that the 1.75 eV band is associated with Si nanocrystals formed from Si clusters in a-SiO2 by the high-dose γ irradiation

    Original languageEnglish
    Pages (from-to)3513-3517
    Number of pages5
    JournalJournal of Applied Physics
    Volume80
    Issue number6
    Publication statusPublished - 1996 Sep 15

    Fingerprint

    photoluminescence
    dosage
    photons
    oxygen
    irradiation
    electron spin
    excitation
    partial pressure
    nanocrystals
    preparation
    silicon

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Nishikaw, H., Watanabe, E., Ito, D., Sakurai, Y., Nagasawa, K., & Ohki, Y. (1996). Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 Journal of Applied Physics, 80(6), 3513-3517.

    Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 . / Nishikaw, Hiroyuki; Watanabe, Eiki; Ito, Daisuke; Sakurai, Yuryo; Nagasawa, Kaya; Ohki, Yoshimichi.

    In: Journal of Applied Physics, Vol. 80, No. 6, 15.09.1996, p. 3513-3517.

    Research output: Contribution to journalArticle

    Nishikaw, H, Watanabe, E, Ito, D, Sakurai, Y, Nagasawa, K & Ohki, Y 1996, 'Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 ', Journal of Applied Physics, vol. 80, no. 6, pp. 3513-3517.
    Nishikaw H, Watanabe E, Ito D, Sakurai Y, Nagasawa K, Ohki Y. Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 Journal of Applied Physics. 1996 Sep 15;80(6):3513-3517.
    Nishikaw, Hiroyuki ; Watanabe, Eiki ; Ito, Daisuke ; Sakurai, Yuryo ; Nagasawa, Kaya ; Ohki, Yoshimichi. / Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2 In: Journal of Applied Physics. 1996 ; Vol. 80, No. 6. pp. 3513-3517.
    @article{a78a05ce3e754a389a63870394752521,
    title = "Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2",
    abstract = "Visible photoluminescence (PL) bands around 2 eV were studied in 60Co γ-irradiated (dose<1 MGy) oxygen-deficient-type amorphous SiO2 (a-SiO2) excited by 2-4 eV photons. In addition to the well-known 1.9 eV PL band due to nonbridging oxygen note centers, another PL band was observed at 2.2 eV when excited by 3.8 eV photons. The intensity of the 2.2 eV band increases with decreasing oxygen partial pressure during the sample preparation. Electron-spin-resoaance measurements show that the intensity of the 2.2 eV band is correlated with the concentration of the E'δ center. a paramagnetic state of a cluster of silicons. After much higher δ irradiation with a dose up to 10 MGy, a new PL band was induced at 1.75 eV under excitation by 2.5 eV photons, as well as the 1.9 and 2.2 eV PL bands. By comparing its spectral shape and excitation energy with known PL band in Si-implanted a-SiO2, it is suggested that the 1.75 eV band is associated with Si nanocrystals formed from Si clusters in a-SiO2 by the high-dose γ irradiation",
    author = "Hiroyuki Nishikaw and Eiki Watanabe and Daisuke Ito and Yuryo Sakurai and Kaya Nagasawa and Yoshimichi Ohki",
    year = "1996",
    month = "9",
    day = "15",
    language = "English",
    volume = "80",
    pages = "3513--3517",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics Publising LLC",
    number = "6",

    }

    TY - JOUR

    T1 - Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2

    AU - Nishikaw, Hiroyuki

    AU - Watanabe, Eiki

    AU - Ito, Daisuke

    AU - Sakurai, Yuryo

    AU - Nagasawa, Kaya

    AU - Ohki, Yoshimichi

    PY - 1996/9/15

    Y1 - 1996/9/15

    N2 - Visible photoluminescence (PL) bands around 2 eV were studied in 60Co γ-irradiated (dose<1 MGy) oxygen-deficient-type amorphous SiO2 (a-SiO2) excited by 2-4 eV photons. In addition to the well-known 1.9 eV PL band due to nonbridging oxygen note centers, another PL band was observed at 2.2 eV when excited by 3.8 eV photons. The intensity of the 2.2 eV band increases with decreasing oxygen partial pressure during the sample preparation. Electron-spin-resoaance measurements show that the intensity of the 2.2 eV band is correlated with the concentration of the E'δ center. a paramagnetic state of a cluster of silicons. After much higher δ irradiation with a dose up to 10 MGy, a new PL band was induced at 1.75 eV under excitation by 2.5 eV photons, as well as the 1.9 and 2.2 eV PL bands. By comparing its spectral shape and excitation energy with known PL band in Si-implanted a-SiO2, it is suggested that the 1.75 eV band is associated with Si nanocrystals formed from Si clusters in a-SiO2 by the high-dose γ irradiation

    AB - Visible photoluminescence (PL) bands around 2 eV were studied in 60Co γ-irradiated (dose<1 MGy) oxygen-deficient-type amorphous SiO2 (a-SiO2) excited by 2-4 eV photons. In addition to the well-known 1.9 eV PL band due to nonbridging oxygen note centers, another PL band was observed at 2.2 eV when excited by 3.8 eV photons. The intensity of the 2.2 eV band increases with decreasing oxygen partial pressure during the sample preparation. Electron-spin-resoaance measurements show that the intensity of the 2.2 eV band is correlated with the concentration of the E'δ center. a paramagnetic state of a cluster of silicons. After much higher δ irradiation with a dose up to 10 MGy, a new PL band was induced at 1.75 eV under excitation by 2.5 eV photons, as well as the 1.9 and 2.2 eV PL bands. By comparing its spectral shape and excitation energy with known PL band in Si-implanted a-SiO2, it is suggested that the 1.75 eV band is associated with Si nanocrystals formed from Si clusters in a-SiO2 by the high-dose γ irradiation

    UR - http://www.scopus.com/inward/record.url?scp=0001663659&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0001663659&partnerID=8YFLogxK

    M3 - Article

    VL - 80

    SP - 3513

    EP - 3517

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 6

    ER -