Volatile/nonvolatile dual-functional atom transistor

Tsuyoshi Hasegawa, Yaomi Itoh, Hirofumi Tanaka, Takami Hino, Tohru Tsuruoka, Kazuya Terabe, Hisao Miyazaki, Kazuhito Tsukagoshi, Takuji Ogawa, Shu Yamaguchi, Masakazu Aono

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We demonstrate a conceptually new atom transistor operation by electric-field control of the nanoionic state. The new atom transistor possesses novel characteristics, such as dual functionality of selective volatile and nonvolatile operations, very small power consumption (pW), and a high ON/OFF ratio [106 (volatile operation) to 108 (nonvolatile operation)], in addition to complementary metal oxide semiconductor (CMOS) process compatibility enabling the development of future computing systems that fully utilize highly-integrated CMOS technology. Cyclic endurance of 10 4 times switching was achieved with the prototype.

Original languageEnglish
Article number015204
JournalApplied Physics Express
Volume4
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Hasegawa, T., Itoh, Y., Tanaka, H., Hino, T., Tsuruoka, T., Terabe, K., Miyazaki, H., Tsukagoshi, K., Ogawa, T., Yamaguchi, S., & Aono, M. (2011). Volatile/nonvolatile dual-functional atom transistor. Applied Physics Express, 4(1), [015204]. https://doi.org/10.1143/APEX.4.015204