Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa, S. Sakai, D. Ishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Voltage-driven distribution of gate oxide breakdown was studied. The samples considered were NMOS capacitors with wet oxides thermally grown on p-type epitaxial substrates. It was found that the distribution of gate oxide breakdown depends on gate voltage and not on the oxide thickness.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
Pages582-583
Number of pages2
Publication statusPublished - 2003
Externally publishedYes
Event2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States
Duration: 2003 Mar 302003 Apr 4

Other

Other2003 IEEE International Reliability Physics Symposium Proceedings
CountryUnited States
CityDallas, TX
Period03/3/3003/4/4

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Hiraiwa, A., Sakai, S., & Ishikawa, D. (2003). Voltage-driven distribution of gate oxide breakdown. In Annual Proceedings - Reliability Physics (Symposium) (pp. 582-583)