Abstract
The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Reliability Physics Symposium Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 582-583 |
| Number of pages | 2 |
| Volume | 2003-January |
| ISBN (Print) | 0780376498 |
| DOIs | |
| Publication status | Published - 2003 |
| Externally published | Yes |
| Event | 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States Duration: 2003 Mar 30 → 2003 Apr 4 |
Other
| Other | 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 |
|---|---|
| Country | United States |
| City | Dallas |
| Period | 03/3/30 → 03/4/4 |
Keywords
- Breakdown voltage
- Capacitors
- Dielectric breakdown
- Dielectric substrates
- Electric breakdown
- MOS devices
- Pulse generation
- Stochastic processes
- Stress
- Weibull distribution
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Hiraiwa, A., Sakai, S., & Ishikawa, D. (2003). Voltage-driven distribution of gate oxide breakdown. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2003-January, pp. 582-583). [1197816] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2003.1197816