Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa, S. Sakai, D. Ishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)


The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)0780376498
Publication statusPublished - 2003
Externally publishedYes
Event2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States
Duration: 2003 Mar 302003 Apr 4


Other2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
Country/TerritoryUnited States


  • Breakdown voltage
  • Capacitors
  • Dielectric breakdown
  • Dielectric substrates
  • Electric breakdown
  • MOS devices
  • Pulse generation
  • Stochastic processes
  • Stress
  • Weibull distribution

ASJC Scopus subject areas

  • Engineering(all)


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