Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa; S. Sakai; D. Ishikawa

doi:10.1109/RELPHY.2003.1197816

Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa, S. Sakai, D. Ishikawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.

Original language	English
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	582-583
Number of pages	2
Volume	2003-January
ISBN (Print)	0780376498
DOIs	https://doi.org/10.1109/RELPHY.2003.1197816
Publication status	Published - 2003
Externally published	Yes
Event	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States Duration: 2003 Mar 30 → 2003 Apr 4

Other

Other	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
Country/Territory	United States
City	Dallas
Period	03/3/30 → 03/4/4

Keywords

Breakdown voltage
Capacitors
Dielectric breakdown
Dielectric substrates
Electric breakdown
MOS devices
Pulse generation
Stochastic processes
Stress
Weibull distribution

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/RELPHY.2003.1197816

Cite this

Hiraiwa, A, Sakai, S & Ishikawa, D 2003, Voltage-driven distribution of gate oxide breakdown. in IEEE International Reliability Physics Symposium Proceedings. vol. 2003-January, 1197816, Institute of Electrical and Electronics Engineers Inc., pp. 582-583, 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003, Dallas, United States, 03/3/30. https://doi.org/10.1109/RELPHY.2003.1197816

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keywords = "Breakdown voltage, Capacitors, Dielectric breakdown, Dielectric substrates, Electric breakdown, MOS devices, Pulse generation, Stochastic processes, Stress, Weibull distribution",

author = "A. Hiraiwa and S. Sakai and D. Ishikawa",

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doi = "10.1109/RELPHY.2003.1197816",

language = "English",

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volume = "2003-January",

pages = "582--583",

booktitle = "IEEE International Reliability Physics Symposium Proceedings",

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AU - Hiraiwa, A.

AU - Sakai, S.

AU - Ishikawa, D.

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AB - The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.

KW - Breakdown voltage

KW - Capacitors

KW - Dielectric breakdown

KW - Dielectric substrates

KW - Electric breakdown

KW - MOS devices

KW - Pulse generation

KW - Stochastic processes

KW - Stress

KW - Weibull distribution

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DO - 10.1109/RELPHY.2003.1197816

M3 - Conference contribution

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SN - 0780376498

VL - 2003-January

SP - 582

EP - 583

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003

Y2 - 30 March 2003 through 4 April 2003

ER -

Voltage-driven distribution of gate oxide breakdown

Abstract

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Keywords

ASJC Scopus subject areas

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