Abstract
The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.
Original language | English |
---|---|
Title of host publication | IEEE International Reliability Physics Symposium Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 582-583 |
Number of pages | 2 |
Volume | 2003-January |
ISBN (Print) | 0780376498 |
DOIs | |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States Duration: 2003 Mar 30 → 2003 Apr 4 |
Other
Other | 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 |
---|---|
Country/Territory | United States |
City | Dallas |
Period | 03/3/30 → 03/4/4 |
Keywords
- Breakdown voltage
- Capacitors
- Dielectric breakdown
- Dielectric substrates
- Electric breakdown
- MOS devices
- Pulse generation
- Stochastic processes
- Stress
- Weibull distribution
ASJC Scopus subject areas
- Engineering(all)