Voltage-driven distribution of gate oxide breakdown

A. Hiraiwa, S. Sakai, D. Ishikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and voltage in the previous experiments. The new findings will be a key basis for investigating the reliability thinning limit.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages582-583
Number of pages2
Volume2003-January
ISBN (Print)0780376498
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States
Duration: 2003 Mar 302003 Apr 4

Other

Other2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
CountryUnited States
CityDallas
Period03/3/3003/4/4

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Keywords

  • Breakdown voltage
  • Capacitors
  • Dielectric breakdown
  • Dielectric substrates
  • Electric breakdown
  • MOS devices
  • Pulse generation
  • Stochastic processes
  • Stress
  • Weibull distribution

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hiraiwa, A., Sakai, S., & Ishikawa, D. (2003). Voltage-driven distribution of gate oxide breakdown. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2003-January, pp. 582-583). [1197816] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2003.1197816