Voltage-induced infrared absorption from polymer field-effect transistors

Tomohiro Koyanagi, Shinobu Furukawa, Ken Tsutsui, Yasuo Wada, Yukio Furukawa

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Voltage-induced infrared absorption spectra from the top- and bottom-contact field-effect transistors fabricated with n-Si, SiO2, and poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as a gate electrode, an insulator, and a semiconductor, respectively, have been measured in a transmission-absorption configuration by the FT-IR difference-spectrum method. The observed voltage-induced infrared bands have been attributed to positive carriers (polarons) injected into the MEH-PPV layer by the application of minus gate bias. The cross section of the doping-induced 1510-cm-1 band has been obtained to be 7.7 × 10-17 cm2 for the MEH-PPV films doped electrochemically with ClO4 -. The observed intensities of the voltage-induced 1510-cm-1 band have been converted to carrier sheet densities by this cross section. The carrier sheet density induced by field effect shows a saturation effect as the gate voltage increases for the top- and bottom-contact devices. The number of carriers injected in the top-contact device is larger than that in the bottom-contact device.

    Original languageEnglish
    Pages (from-to)156-160
    Number of pages5
    JournalVibrational Spectroscopy
    Volume42
    Issue number1
    DOIs
    Publication statusPublished - 2006 Oct 18

    Fingerprint

    Infrared absorption
    Field effect transistors
    Polymers
    Electric potential
    Polarons
    Absorption spectra
    Doping (additives)
    Semiconductor materials
    Infrared radiation
    Electrodes
    poly(2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene)

    Keywords

    • Infrared spectroscopy
    • Organic field-effect transistors
    • Poly(p-phenylenevinylene) derivatives

    ASJC Scopus subject areas

    • Analytical Chemistry
    • Spectroscopy

    Cite this

    Voltage-induced infrared absorption from polymer field-effect transistors. / Koyanagi, Tomohiro; Furukawa, Shinobu; Tsutsui, Ken; Wada, Yasuo; Furukawa, Yukio.

    In: Vibrational Spectroscopy, Vol. 42, No. 1, 18.10.2006, p. 156-160.

    Research output: Contribution to journalArticle

    Koyanagi, Tomohiro ; Furukawa, Shinobu ; Tsutsui, Ken ; Wada, Yasuo ; Furukawa, Yukio. / Voltage-induced infrared absorption from polymer field-effect transistors. In: Vibrational Spectroscopy. 2006 ; Vol. 42, No. 1. pp. 156-160.
    @article{991c63ca61f24e5789c3fd368a8d297a,
    title = "Voltage-induced infrared absorption from polymer field-effect transistors",
    abstract = "Voltage-induced infrared absorption spectra from the top- and bottom-contact field-effect transistors fabricated with n-Si, SiO2, and poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as a gate electrode, an insulator, and a semiconductor, respectively, have been measured in a transmission-absorption configuration by the FT-IR difference-spectrum method. The observed voltage-induced infrared bands have been attributed to positive carriers (polarons) injected into the MEH-PPV layer by the application of minus gate bias. The cross section of the doping-induced 1510-cm-1 band has been obtained to be 7.7 × 10-17 cm2 for the MEH-PPV films doped electrochemically with ClO4 -. The observed intensities of the voltage-induced 1510-cm-1 band have been converted to carrier sheet densities by this cross section. The carrier sheet density induced by field effect shows a saturation effect as the gate voltage increases for the top- and bottom-contact devices. The number of carriers injected in the top-contact device is larger than that in the bottom-contact device.",
    keywords = "Infrared spectroscopy, Organic field-effect transistors, Poly(p-phenylenevinylene) derivatives",
    author = "Tomohiro Koyanagi and Shinobu Furukawa and Ken Tsutsui and Yasuo Wada and Yukio Furukawa",
    year = "2006",
    month = "10",
    day = "18",
    doi = "10.1016/j.vibspec.2006.04.012",
    language = "English",
    volume = "42",
    pages = "156--160",
    journal = "Vibrational Spectroscopy",
    issn = "0924-2031",
    publisher = "Elsevier",
    number = "1",

    }

    TY - JOUR

    T1 - Voltage-induced infrared absorption from polymer field-effect transistors

    AU - Koyanagi, Tomohiro

    AU - Furukawa, Shinobu

    AU - Tsutsui, Ken

    AU - Wada, Yasuo

    AU - Furukawa, Yukio

    PY - 2006/10/18

    Y1 - 2006/10/18

    N2 - Voltage-induced infrared absorption spectra from the top- and bottom-contact field-effect transistors fabricated with n-Si, SiO2, and poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as a gate electrode, an insulator, and a semiconductor, respectively, have been measured in a transmission-absorption configuration by the FT-IR difference-spectrum method. The observed voltage-induced infrared bands have been attributed to positive carriers (polarons) injected into the MEH-PPV layer by the application of minus gate bias. The cross section of the doping-induced 1510-cm-1 band has been obtained to be 7.7 × 10-17 cm2 for the MEH-PPV films doped electrochemically with ClO4 -. The observed intensities of the voltage-induced 1510-cm-1 band have been converted to carrier sheet densities by this cross section. The carrier sheet density induced by field effect shows a saturation effect as the gate voltage increases for the top- and bottom-contact devices. The number of carriers injected in the top-contact device is larger than that in the bottom-contact device.

    AB - Voltage-induced infrared absorption spectra from the top- and bottom-contact field-effect transistors fabricated with n-Si, SiO2, and poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) as a gate electrode, an insulator, and a semiconductor, respectively, have been measured in a transmission-absorption configuration by the FT-IR difference-spectrum method. The observed voltage-induced infrared bands have been attributed to positive carriers (polarons) injected into the MEH-PPV layer by the application of minus gate bias. The cross section of the doping-induced 1510-cm-1 band has been obtained to be 7.7 × 10-17 cm2 for the MEH-PPV films doped electrochemically with ClO4 -. The observed intensities of the voltage-induced 1510-cm-1 band have been converted to carrier sheet densities by this cross section. The carrier sheet density induced by field effect shows a saturation effect as the gate voltage increases for the top- and bottom-contact devices. The number of carriers injected in the top-contact device is larger than that in the bottom-contact device.

    KW - Infrared spectroscopy

    KW - Organic field-effect transistors

    KW - Poly(p-phenylenevinylene) derivatives

    UR - http://www.scopus.com/inward/record.url?scp=33749560161&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33749560161&partnerID=8YFLogxK

    U2 - 10.1016/j.vibspec.2006.04.012

    DO - 10.1016/j.vibspec.2006.04.012

    M3 - Article

    AN - SCOPUS:33749560161

    VL - 42

    SP - 156

    EP - 160

    JO - Vibrational Spectroscopy

    JF - Vibrational Spectroscopy

    SN - 0924-2031

    IS - 1

    ER -