Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)

Hiroya Tsuji, Yukio Furukawa

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.

    Original languageEnglish
    Pages (from-to)353-359
    Number of pages7
    JournalMolecular Crystals and Liquid Crystals
    Volume455
    Issue number1
    DOIs
    Publication statusPublished - 2006 Oct 1

    Fingerprint

    Organic field effect transistors
    Diamines
    Temperature programmed desorption
    diamines
    infrared spectra
    field effect transistors
    Infrared radiation
    Electric potential
    electric potential
    Stark effect
    Hole mobility
    Infrared absorption
    hole mobility
    Silicon
    Field effect transistors
    infrared absorption
    silicon
    Substrates
    configurations
    diphenyl

    Keywords

    • Infrared spectroscopy
    • Mobility
    • Organic field-effect transistors
    • TPD

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    @article{4a82c848f7a340a09df049e075ed0ec9,
    title = "Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)",
    abstract = "The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.",
    keywords = "Infrared spectroscopy, Mobility, Organic field-effect transistors, TPD",
    author = "Hiroya Tsuji and Yukio Furukawa",
    year = "2006",
    month = "10",
    day = "1",
    doi = "10.1080/15421400600698998",
    language = "English",
    volume = "455",
    pages = "353--359",
    journal = "Molecular Crystals and Liquid Crystals",
    issn = "1542-1406",
    publisher = "Taylor and Francis Ltd.",
    number = "1",

    }

    TY - JOUR

    T1 - Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)

    AU - Tsuji, Hiroya

    AU - Furukawa, Yukio

    PY - 2006/10/1

    Y1 - 2006/10/1

    N2 - The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.

    AB - The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.

    KW - Infrared spectroscopy

    KW - Mobility

    KW - Organic field-effect transistors

    KW - TPD

    UR - http://www.scopus.com/inward/record.url?scp=33747602821&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33747602821&partnerID=8YFLogxK

    U2 - 10.1080/15421400600698998

    DO - 10.1080/15421400600698998

    M3 - Article

    VL - 455

    SP - 353

    EP - 359

    JO - Molecular Crystals and Liquid Crystals

    JF - Molecular Crystals and Liquid Crystals

    SN - 1542-1406

    IS - 1

    ER -