Voltage-induced infrared spectra from the organic field-effect transistor based on N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′- biphenyl-4,4′-diamine (TPD)

Hiroya Tsuji, Yukio Furukawa

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2 Citations (Scopus)


The field-effect transistor fabricated with N,N′-bis(3-methylphenyl)- N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (TPD) on a silicon substrate has shown a p-channel organic field-effect transistor (OFET) operating in the accumulation mode. The hole mobility in the TPD layer has been obtained to be 7.2 × 10 -4 cm 2 V -1 s -1 . Gate-voltage-induced infrared absorption from the OFET has been measured in the transmission-absorption configuration by the FT-IR difference-spectrum method. The observed spectra depend on the gate voltage applied. The vibrational Stark effect and the bands originating from the carriers injected into the TPD layer have been observed.

Original languageEnglish
Pages (from-to)353-359
Number of pages7
JournalMolecular Crystals and Liquid Crystals
Issue number1
Publication statusPublished - 2006 Oct 1



  • Infrared spectroscopy
  • Mobility
  • Organic field-effect transistors
  • TPD

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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