Volume swelling of amorphous SiC during ion-beam irradiation

Manabu Ishimaru; In Tae Bae; Akihiko Hirata; Yoshihiko Hirotsu; James A. Valdez; Kurt E. Sickafus

doi:10.1103/PhysRevB.72.024116

Volume swelling of amorphous SiC during ion-beam irradiation

Manabu Ishimaru, In Tae Bae, Akihiko Hirata, Yoshihiko Hirotsu, James A. Valdez, Kurt E. Sickafus

Research output: Contribution to journal › Article

35 Citations (Scopus)

Abstract

Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

Original language	English
Article number	024116
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.72.024116
Publication status	Published - 2005 Jul 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.72.024116

Fingerprint Dive into the research topics of 'Volume swelling of amorphous SiC during ion-beam irradiation'. Together they form a unique fingerprint.

Cite this

Ishimaru, M., Bae, I. T., Hirata, A., Hirotsu, Y., Valdez, J. A., & Sickafus, K. E. (2005). Volume swelling of amorphous SiC during ion-beam irradiation. Physical Review B - Condensed Matter and Materials Physics, 72(2), [024116]. https://doi.org/10.1103/PhysRevB.72.024116

@article{5b13998f66734db481bb23faac633931,

title = "Volume swelling of amorphous SiC during ion-beam irradiation",

abstract = "Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.",

author = "Manabu Ishimaru and Bae, {In Tae} and Akihiko Hirata and Yoshihiko Hirotsu and Valdez, {James A.} and Sickafus, {Kurt E.}",

year = "2005",

month = jul,

day = "1",

doi = "10.1103/PhysRevB.72.024116",

language = "English",

volume = "72",

journal = "Physical Review B-Condensed Matter",

issn = "0163-1829",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Volume swelling of amorphous SiC during ion-beam irradiation

AU - Ishimaru, Manabu

AU - Bae, In Tae

AU - Hirata, Akihiko

AU - Hirotsu, Yoshihiko

AU - Valdez, James A.

AU - Sickafus, Kurt E.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

AB - Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

UR - http://www.scopus.com/inward/record.url?scp=33749233676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749233676&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.72.024116

DO - 10.1103/PhysRevB.72.024116

M3 - Article

AN - SCOPUS:33749233676

VL - 72

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 2

M1 - 024116

ER -