Volume swelling of amorphous SiC during ion-beam irradiation

Manabu Ishimaru; In Tae Bae; Akihiko Hirata; Yoshihiko Hirotsu; James A. Valdez; Kurt E. Sickafus

doi:10.1103/PhysRevB.72.024116

Volume swelling of amorphous SiC during ion-beam irradiation

Manabu Ishimaru, In Tae Bae, Akihiko Hirata, Yoshihiko Hirotsu, James A. Valdez, Kurt E. Sickafus

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

Original language	English
Article number	024116
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevB.72.024116
Publication status	Published - 2005 Jul 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.72.024116

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abstract = "Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.",

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AU - Ishimaru, Manabu

AU - Bae, In Tae

AU - Hirata, Akihiko

AU - Hirotsu, Yoshihiko

AU - Valdez, James A.

AU - Sickafus, Kurt E.

PY - 2005/7/1

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N2 - Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

AB - Relationships between chemical short-range order and volume swelling of amorphous silicon carbide (SiC) under radiation environments have been examined using energy-filtering transmission electron microscopy in combination with imaging plate techniques. Single crystals of 4H SiC with (0001) orientation were irradiated with 300keV xenon ions to a fluence of 1015cm-2 at cryogenic (120K) and elevated (373K) temperatures. A continuous amorphous layer was formed in both specimens, but the magnitude of their volume change was different: volume swelling becomes more pronounced with decreasing irradiation temperatures. From radial distribution function analyses, it was found that the amount of Si Si atomic pairs increases more rapidly than that of C C atomic pairs with the progress of chemical disordering. We discuss the ion-beam-induced swelling in amorphous SiC within the context of our results as well as previous observations.

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Volume swelling of amorphous SiC during ion-beam irradiation

Abstract

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