Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?

N. Sugii, T. Iwamatsu, Y. Yamamoto, H. Makiyama, H. Shinohara, H. Oda, S. Kamohara, Y. Yamaguchi, K. Ishibashi, T. Mizutani, T. Hiramoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near-or sub-Vth operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The 'Perpetuum-Mobile' micro-controllers operating at ∼0.4 V are expected to be implemented in many applications such as the internet of things.

Original languageEnglish
Title of host publication2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
PublisherIEEE Computer Society
ISBN (Print)9781479913602
DOIs
Publication statusPublished - 2013 Jan 1
Event2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States
Duration: 2013 Oct 72013 Oct 10

Publication series

Name2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Other

Other2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
CountryUnited States
CityMonterey, CA
Period13/10/713/10/10

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sugii, N., Iwamatsu, T., Yamamoto, Y., Makiyama, H., Shinohara, H., Oda, H., Kamohara, S., Yamaguchi, Y., Ishibashi, K., Mizutani, T., & Hiramoto, T. (2013). Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB? In 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 [6716576] (2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013). IEEE Computer Society. https://doi.org/10.1109/S3S.2013.6716576