W-band low power sub-harmonic mixer IC in 130-nm SiGe BiCMOS

Xin Yang, Zheng Sun, Takayuki Shibata, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents a sub-harmonic mixer IC design for W-band automotive radar applications in 130-nm SiGe BiCMOS technology. The mixer makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure mixer core with a Marchand balun for the W-band on-wafer measurement. The balun achieves a measured amplitude imbalanced of less than 0.9 dB and a phase imbalance of less than 2.5 degrees in a frequency range from 20 GHz to 66 GHz. The sub-harmonic mixer IC exhibits a conversion gain of 3.8 dB at 80 GHz with an LO power of 0 dBm at 39.5 GHz. And the mixer core only consumes 0.42 mA with a supply voltage of 2.5 V.

Original languageEnglish
Title of host publication2015 IEEE International Wireless Symposium, IWS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479919284
DOIs
Publication statusPublished - 2015 Jul 22
EventIEEE International Wireless Symposium, IWS 2015 - Shenzhen, China
Duration: 2015 Mar 302015 Apr 1

Other

OtherIEEE International Wireless Symposium, IWS 2015
CountryChina
CityShenzhen
Period15/3/3015/4/1

Keywords

  • 130-nm SiGe BiCMOS
  • CECCTP
  • low power
  • Marchand Balun
  • Sub-harmonic mixer
  • W-band

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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  • Cite this

    Yang, X., Sun, Z., Shibata, T., & Yoshimasu, T. (2015). W-band low power sub-harmonic mixer IC in 130-nm SiGe BiCMOS. In 2015 IEEE International Wireless Symposium, IWS 2015 [7164557] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2015.7164557