Abstract
A new W-polymetal gate electrode with the structure of W/WN/WSi/poly-Si is proposed. The W-polymetal gate is suitable for high-density memories since it has low resistance and is compatible with the self-aligned contact process. In our study, however, it is found that the interface of W and poly-Si has non-ohmic and quite high resistance in the case wherein only WN is used as a barrier film. This resistance increases the delay in complementary metal-oxide-semiconductor (CMOS) logic circuits and prevents high-speed operation. Our new process includes the deposition of thin WSi on poly-Si, followed by rapid thermal annealing, which results in ohmic and sufficiently low contact resistance between W and poly-Si. It is also demonstrated that selective gate reoxidation is successfully applied for this new structure, and the insertion of thin WSi does not cause any adverse effect on the electrical characteristics of metal-oxide-semiconductor field-effect transistor (MOSFET). This process is promising for high-speed and high-density embedded memory.
| Original language | English |
|---|---|
| Pages (from-to) | 1799-1803 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 4 B |
| Publication status | Published - 2004 Apr |
| Externally published | Yes |
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Keywords
- Polymetal gate
- Silicon
- Tungsten nitride
- Tungsten silicide
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
W-polymetal gate with low W/poly-Si interface resistance for high-speed/high-density embedded memory. / Yamashita, Tomohiro; Nishida, Yukio; Hayashi, Kiyoshi; Eimori, Takahisa; Inuishi, Masahide; Ohji, Yuzuru.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 04.2004, p. 1799-1803.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - W-polymetal gate with low W/poly-Si interface resistance for high-speed/high-density embedded memory
AU - Yamashita, Tomohiro
AU - Nishida, Yukio
AU - Hayashi, Kiyoshi
AU - Eimori, Takahisa
AU - Inuishi, Masahide
AU - Ohji, Yuzuru
PY - 2004/4
Y1 - 2004/4
N2 - A new W-polymetal gate electrode with the structure of W/WN/WSi/poly-Si is proposed. The W-polymetal gate is suitable for high-density memories since it has low resistance and is compatible with the self-aligned contact process. In our study, however, it is found that the interface of W and poly-Si has non-ohmic and quite high resistance in the case wherein only WN is used as a barrier film. This resistance increases the delay in complementary metal-oxide-semiconductor (CMOS) logic circuits and prevents high-speed operation. Our new process includes the deposition of thin WSi on poly-Si, followed by rapid thermal annealing, which results in ohmic and sufficiently low contact resistance between W and poly-Si. It is also demonstrated that selective gate reoxidation is successfully applied for this new structure, and the insertion of thin WSi does not cause any adverse effect on the electrical characteristics of metal-oxide-semiconductor field-effect transistor (MOSFET). This process is promising for high-speed and high-density embedded memory.
AB - A new W-polymetal gate electrode with the structure of W/WN/WSi/poly-Si is proposed. The W-polymetal gate is suitable for high-density memories since it has low resistance and is compatible with the self-aligned contact process. In our study, however, it is found that the interface of W and poly-Si has non-ohmic and quite high resistance in the case wherein only WN is used as a barrier film. This resistance increases the delay in complementary metal-oxide-semiconductor (CMOS) logic circuits and prevents high-speed operation. Our new process includes the deposition of thin WSi on poly-Si, followed by rapid thermal annealing, which results in ohmic and sufficiently low contact resistance between W and poly-Si. It is also demonstrated that selective gate reoxidation is successfully applied for this new structure, and the insertion of thin WSi does not cause any adverse effect on the electrical characteristics of metal-oxide-semiconductor field-effect transistor (MOSFET). This process is promising for high-speed and high-density embedded memory.
KW - Polymetal gate
KW - Silicon
KW - Tungsten nitride
KW - Tungsten silicide
UR - http://www.scopus.com/inward/record.url?scp=3142599172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3142599172&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:3142599172
VL - 43
SP - 1799
EP - 1803
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 B
ER -