Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

Fengwen Mu, Masahisa Fujino, Tadatomo Suga, Yoshikazu Takahashi, Haruo Nakazawa, Kenichi Iguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.

Original languageEnglish
Title of host publicationICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages542-545
Number of pages4
ISBN (Electronic)9784904090138
DOIs
Publication statusPublished - 2015 May 20
Externally publishedYes
Event2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan
Duration: 2015 Apr 142015 Apr 17

Publication series

NameICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
CountryJapan
CityKyoto
Period15/4/1415/4/17

Fingerprint

Wafer bonding
High resolution transmission electron microscopy
Annealing
Temperature

Keywords

  • bonding strength
  • interface
  • SiC
  • surface activated bonding
  • wafer bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Mu, F., Fujino, M., Suga, T., Takahashi, Y., Nakazawa, H., & Iguchi, K. (2015). Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 542-545). [7111073] (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111073

Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. / Mu, Fengwen; Fujino, Masahisa; Suga, Tadatomo; Takahashi, Yoshikazu; Nakazawa, Haruo; Iguchi, Kenichi.

ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 542-545 7111073 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mu, F, Fujino, M, Suga, T, Takahashi, Y, Nakazawa, H & Iguchi, K 2015, Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111073, ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, Institute of Electrical and Electronics Engineers Inc., pp. 542-545, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 15/4/14. https://doi.org/10.1109/ICEP-IAAC.2015.7111073
Mu F, Fujino M, Suga T, Takahashi Y, Nakazawa H, Iguchi K. Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 542-545. 7111073. (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). https://doi.org/10.1109/ICEP-IAAC.2015.7111073
Mu, Fengwen ; Fujino, Masahisa ; Suga, Tadatomo ; Takahashi, Yoshikazu ; Nakazawa, Haruo ; Iguchi, Kenichi. / Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method. ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 542-545 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).
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AU - Nakazawa, Haruo

AU - Iguchi, Kenichi

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