Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.

Original languageEnglish
Title of host publicationConference Digest - IEEE International Semiconductor Laser Conference
Pages37-38
Number of pages2
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan
Duration: 2010 Sep 262010 Sep 30

Other

Other2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
CountryJapan
CityKyoto
Period10/9/2610/9/30

Fingerprint

Quantum dot lasers
threshold currents
Semiconductor quantum dots
Semiconductor lasers
semiconductor lasers
quantum dots
Wavelength
Lasers
wavelengths
lasers
Compensation and Redress

Keywords

  • Molecular beam epitaxy
  • Quantum dot
  • Semiconductor laser
  • Strain compensation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Akahane, K., Yamamoto, N., & Kawanishi, T. (2010). Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 37-38). [5642763] https://doi.org/10.1109/ISLC.2010.5642763

Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

Conference Digest - IEEE International Semiconductor Laser Conference. 2010. p. 37-38 5642763.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2010, Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique. in Conference Digest - IEEE International Semiconductor Laser Conference., 5642763, pp. 37-38, 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010, Kyoto, Japan, 10/9/26. https://doi.org/10.1109/ISLC.2010.5642763
Akahane K, Yamamoto N, Kawanishi T. Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique. In Conference Digest - IEEE International Semiconductor Laser Conference. 2010. p. 37-38. 5642763 https://doi.org/10.1109/ISLC.2010.5642763
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique. Conference Digest - IEEE International Semiconductor Laser Conference. 2010. pp. 37-38
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