Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.

Original languageEnglish
Title of host publication2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages37-38
Number of pages2
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan
Duration: 2010 Sep 262010 Sep 30

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
CountryJapan
CityKyoto
Period10/9/2610/9/30

Keywords

  • Molecular beam epitaxy
  • Quantum dot
  • Semiconductor laser
  • Strain compensation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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