Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique

Kouichi Akahane; Naokatsu Yamamoto; Tetsuya Kawanishi

doi:10.1109/ISLC.2010.5642763

Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique

Kouichi Akahane^*, Naokatsu Yamamoto, Tetsuya Kawanishi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.

Original language	English
Title of host publication	2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages	37-38
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2010.5642763
Publication status	Published - 2010 Dec 1
Externally published	Yes
Event	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan Duration: 2010 Sept 26 → 2010 Sept 30

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Other

Other	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
Country/Territory	Japan
City	Kyoto
Period	10/9/26 → 10/9/30

Keywords

Molecular beam epitaxy
Quantum dot
Semiconductor laser
Strain compensation

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.2010.5642763

Cite this

Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010. 2010. p. 37-38 5642763 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2010, Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique. in 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010., 5642763, Conference Digest - IEEE International Semiconductor Laser Conference, pp. 37-38, 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010, Kyoto, Japan, 10/9/26. https://doi.org/10.1109/ISLC.2010.5642763

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title = "Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique",

abstract = "We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.",

keywords = "Molecular beam epitaxy, Quantum dot, Semiconductor laser, Strain compensation",

author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/ISLC.2010.5642763",

language = "English",

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series = "Conference Digest - IEEE International Semiconductor Laser Conference",

pages = "37--38",

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note = "2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 ; Conference date: 26-09-2010 Through 30-09-2010",

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T1 - Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique

AU - Akahane, Kouichi

AU - Yamamoto, Naokatsu

AU - Kawanishi, Tetsuya

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.

AB - We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.

KW - Molecular beam epitaxy

KW - Quantum dot

KW - Semiconductor laser

KW - Strain compensation

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DO - 10.1109/ISLC.2010.5642763

M3 - Conference contribution

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SN - 9781424456833

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 37

EP - 38

BT - 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010

T2 - 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010

Y2 - 26 September 2010 through 30 September 2010

ER -

Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique

Abstract

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Keywords

ASJC Scopus subject areas

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