Wettability and crystalline orientation of Cu nanoislands on SiO 2 with a Cr underlayer

M. Hu, Suguru Noda, T. Okubo, H. Komiyama

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.

Original languageEnglish
Pages (from-to)625-628
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume79
Issue number3
DOIs
Publication statusPublished - 2004 Aug
Externally publishedYes

Fingerprint

wettability
Crystal orientation
Wetting
Crystalline materials
Thin films
adhesion
Adhesion
thin films
Sputter deposition
Interfacial energy
surface energy
Transmission electron microscopy
transmission electron microscopy
Substrates
interactions
energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Wettability and crystalline orientation of Cu nanoislands on SiO 2 with a Cr underlayer. / Hu, M.; Noda, Suguru; Okubo, T.; Komiyama, H.

In: Applied Physics A: Materials Science and Processing, Vol. 79, No. 3, 08.2004, p. 625-628.

Research output: Contribution to journalArticle

@article{3c4cd82cd6f742448f719dd203d0022f,
title = "Wettability and crystalline orientation of Cu nanoislands on SiO 2 with a Cr underlayer",
abstract = "Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.",
author = "M. Hu and Suguru Noda and T. Okubo and H. Komiyama",
year = "2004",
month = "8",
doi = "10.1007/s00339-004-2604-3",
language = "English",
volume = "79",
pages = "625--628",
journal = "Applied Physics",
issn = "0340-3793",
publisher = "Springer Heidelberg",
number = "3",

}

TY - JOUR

T1 - Wettability and crystalline orientation of Cu nanoislands on SiO 2 with a Cr underlayer

AU - Hu, M.

AU - Noda, Suguru

AU - Okubo, T.

AU - Komiyama, H.

PY - 2004/8

Y1 - 2004/8

N2 - Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.

AB - Cu thin films were grown by sputter deposition on SiO2 substrates with a Cr underlayer that is known to improve the adhesion between Cu and SiO2. The initial stage of Cu growth was investigated using transmission electron microscopy. Results showed that non-wetting spherical Cu nanoislands were formed with a random crystalline orientation on Cr/SiO 2, and evolved into a randomly oriented polycrystalline thin film. These results were then compared with our previous results on the initial growth of Cu on SiO2 with and without a Ti underlayer. A quantitative model was proposed to explain the difference in dependence of the wettability of microscopic nanoislands and that of the adhesion of macroscopic thin films on interfacial interactions and surface energies.

UR - http://www.scopus.com/inward/record.url?scp=3042687239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042687239&partnerID=8YFLogxK

U2 - 10.1007/s00339-004-2604-3

DO - 10.1007/s00339-004-2604-3

M3 - Article

AN - SCOPUS:3042687239

VL - 79

SP - 625

EP - 628

JO - Applied Physics

JF - Applied Physics

SN - 0340-3793

IS - 3

ER -