Wide-gap II-VI heterostructures

R. L. Gunshor, A. V. Nurmikko, L. A. Kolodziejski, Masakazu Kobayashi, N. Otsuka

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

New advances in epitaxial growth techniques have contributed to an improved understanding of the properties of II-VI materials and their alloys. The creation of novel heterojunctions, quantum well structures, and strained-layer superlattices, composed of II-VI/III-V and II-VI/II-VI multilayers, can be attributed to their successful epitaxial growth by molecular beam epitaxy (MBE). The objective of this paper is to discuss some recent advances in the growth of II-VI/III-V and II-VI/II-VI heterostructures, with emphasis on two particular topics. In the first, pseudomorphic epilayer/epilayer heterojunctions consisting of ZnTe on AlSb, a configuration with potential for the development of injection light emitting devices, have been grown by MBE. Microstructural and optical evaluation has indicated a high structural quality. The second topic describes the use of MBE for the growth of novel structures incorporating a previously hypothetical magnetic semiconductor, the zincblende phase of MnTe. Characterization using TEM and X-ray diffraction reveals only the zincblende phases of MnTe. Whereas bulk crystals of MnTe having a NiAs structure with a bandgap of 1.3 eV, the zincblende phase exhibits a bandgap of 3.2 eV. Single quantum well structures incorporating zincblende MnTe exhibit 2D electron and hole confinement in both CdTe and ZnTe quantum wells, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

Original languageEnglish
Pages (from-to)14-22
Number of pages9
JournalJournal of Crystal Growth
Volume101
Issue number1-4
DOIs
Publication statusPublished - 1990 Apr 1
Externally publishedYes

Fingerprint

zincblende
Molecular beam epitaxy
Semiconductor quantum wells
Heterojunctions
Energy gap
Epilayers
Epitaxial growth
molecular beam epitaxy
quantum wells
Magnetic semiconductors
Superlattices
heterojunctions
Multilayers
Transmission electron microscopy
X ray diffraction
Crystals
Electrons
superlattices
injection
transmission electron microscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Gunshor, R. L., Nurmikko, A. V., Kolodziejski, L. A., Kobayashi, M., & Otsuka, N. (1990). Wide-gap II-VI heterostructures. Journal of Crystal Growth, 101(1-4), 14-22. https://doi.org/10.1016/0022-0248(90)90930-J

Wide-gap II-VI heterostructures. / Gunshor, R. L.; Nurmikko, A. V.; Kolodziejski, L. A.; Kobayashi, Masakazu; Otsuka, N.

In: Journal of Crystal Growth, Vol. 101, No. 1-4, 01.04.1990, p. 14-22.

Research output: Contribution to journalArticle

Gunshor, RL, Nurmikko, AV, Kolodziejski, LA, Kobayashi, M & Otsuka, N 1990, 'Wide-gap II-VI heterostructures', Journal of Crystal Growth, vol. 101, no. 1-4, pp. 14-22. https://doi.org/10.1016/0022-0248(90)90930-J
Gunshor RL, Nurmikko AV, Kolodziejski LA, Kobayashi M, Otsuka N. Wide-gap II-VI heterostructures. Journal of Crystal Growth. 1990 Apr 1;101(1-4):14-22. https://doi.org/10.1016/0022-0248(90)90930-J
Gunshor, R. L. ; Nurmikko, A. V. ; Kolodziejski, L. A. ; Kobayashi, Masakazu ; Otsuka, N. / Wide-gap II-VI heterostructures. In: Journal of Crystal Growth. 1990 ; Vol. 101, No. 1-4. pp. 14-22.
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