Abstract
This paper discusses the optimal combination of 1 transistor (T) and 1 magnetic tunnel junction (MTJ) type cell for spin transfer torque memory. Taking into consideration of current magnitude for both the Tand the MTJ, either PMOS-bottom pin structure or NMOS-top pin structure can be a promising choice. Focusing on the PMOS-bottom pin structure from the viewpoint of avoiding process difficulty, we clarified the condition that the structure would be effective. In order to verify the structure's effectiveness, a stand-alone MTJ test element group and a 1 kbit memory array chip were designed and fabricated with 90nm CMOS/100nm MTJ process. With the pass bit percentage measurement of the memory chip, we successfully demonstrated that 1-PMOS and 1-bottom-pin-MTJ has the wide operation margin of 100% pass at near 1.6V. It will be an effective solution for 1T-1MTJ memories.
| Original language | English |
|---|---|
| Article number | 04ED13 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 53 |
| Issue number | 4 SPEC. ISSUE |
| DOIs | |
| Publication status | Published - 2014 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell. / Koike, Hiroki; Ohsawa, Takashi; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo.
In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04ED13, 2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell
AU - Koike, Hiroki
AU - Ohsawa, Takashi
AU - Miura, Sadahiko
AU - Honjo, Hiroaki
AU - Ikeda, Shoji
AU - Hanyu, Takahiro
AU - Ohno, Hideo
AU - Endoh, Tetsuo
PY - 2014
Y1 - 2014
N2 - This paper discusses the optimal combination of 1 transistor (T) and 1 magnetic tunnel junction (MTJ) type cell for spin transfer torque memory. Taking into consideration of current magnitude for both the Tand the MTJ, either PMOS-bottom pin structure or NMOS-top pin structure can be a promising choice. Focusing on the PMOS-bottom pin structure from the viewpoint of avoiding process difficulty, we clarified the condition that the structure would be effective. In order to verify the structure's effectiveness, a stand-alone MTJ test element group and a 1 kbit memory array chip were designed and fabricated with 90nm CMOS/100nm MTJ process. With the pass bit percentage measurement of the memory chip, we successfully demonstrated that 1-PMOS and 1-bottom-pin-MTJ has the wide operation margin of 100% pass at near 1.6V. It will be an effective solution for 1T-1MTJ memories.
AB - This paper discusses the optimal combination of 1 transistor (T) and 1 magnetic tunnel junction (MTJ) type cell for spin transfer torque memory. Taking into consideration of current magnitude for both the Tand the MTJ, either PMOS-bottom pin structure or NMOS-top pin structure can be a promising choice. Focusing on the PMOS-bottom pin structure from the viewpoint of avoiding process difficulty, we clarified the condition that the structure would be effective. In order to verify the structure's effectiveness, a stand-alone MTJ test element group and a 1 kbit memory array chip were designed and fabricated with 90nm CMOS/100nm MTJ process. With the pass bit percentage measurement of the memory chip, we successfully demonstrated that 1-PMOS and 1-bottom-pin-MTJ has the wide operation margin of 100% pass at near 1.6V. It will be an effective solution for 1T-1MTJ memories.
UR - http://www.scopus.com/inward/record.url?scp=84903277273&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903277273&partnerID=8YFLogxK
U2 - 10.7567/JJAP.53.04ED13
DO - 10.7567/JJAP.53.04ED13
M3 - Article
AN - SCOPUS:84903277273
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 SPEC. ISSUE
M1 - 04ED13
ER -