Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application

Hiroshi Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, A. Hiraiwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    6 Citations (Scopus)

    Abstract

    By forming a highly stable Al<inf>2</inf>O<inf>3</inf> gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50% at a given gate bias. The maximum breakdown voltage (V<inf>B,max</inf>) of the MOSFET without a field plate is 996V at a gate-drain distance (L<inf>GD</inf>) of 9μm. We fabricated some MOSFETs satisfying V<inf>B,max</inf>/L<inf>GD</inf> > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages11.2.1-11.2.4
    Volume2015-February
    EditionFebruary
    DOIs
    Publication statusPublished - 2015 Feb 20
    Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
    Duration: 2014 Dec 152014 Dec 17

    Other

    Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
    CountryUnited States
    CitySan Francisco
    Period14/12/1514/12/17

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    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Kawarada, H., Yamada, T., Xu, D., Tsuboi, H., Saito, T., & Hiraiwa, A. (2015). Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application. In Technical Digest - International Electron Devices Meeting, IEDM (February ed., Vol. 2015-February, pp. 11.2.1-11.2.4). [7047030] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047030