Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application

Hiroshi Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, A. Hiraiwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    By forming a highly stable Al<inf>2</inf>O<inf>3</inf> gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50% at a given gate bias. The maximum breakdown voltage (V<inf>B,max</inf>) of the MOSFET without a field plate is 996V at a gate-drain distance (L<inf>GD</inf>) of 9μm. We fabricated some MOSFETs satisfying V<inf>B,max</inf>/L<inf>GD</inf> > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.

    Original languageEnglish
    Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages11.2.1-11.2.4
    Volume2015-February
    EditionFebruary
    DOIs
    Publication statusPublished - 2015 Feb 20
    Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
    Duration: 2014 Dec 152014 Dec 17

    Other

    Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
    CountryUnited States
    CitySan Francisco
    Period14/12/1514/12/17

    Fingerprint

    Diamond
    MOSFET devices
    Power electronics
    high voltages
    Diamonds
    field effect transistors
    diamonds
    Drain current
    Electric potential
    Field effect transistors
    Electric breakdown
    electronics
    metal oxide semiconductors
    Oxides
    Temperature
    temperature
    electrical faults
    oxides

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry

    Cite this

    Kawarada, H., Yamada, T., Xu, D., Tsuboi, H., Saito, T., & Hiraiwa, A. (2015). Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application. In Technical Digest - International Electron Devices Meeting, IEDM (February ed., Vol. 2015-February, pp. 11.2.1-11.2.4). [7047030] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047030

    Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application. / Kawarada, Hiroshi; Yamada, T.; Xu, D.; Tsuboi, H.; Saito, T.; Hiraiwa, A.

    Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 11.2.1-11.2.4 7047030.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Kawarada, H, Yamada, T, Xu, D, Tsuboi, H, Saito, T & Hiraiwa, A 2015, Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application. in Technical Digest - International Electron Devices Meeting, IEDM. February edn, vol. 2015-February, 7047030, Institute of Electrical and Electronics Engineers Inc., pp. 11.2.1-11.2.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7047030
    Kawarada H, Yamada T, Xu D, Tsuboi H, Saito T, Hiraiwa A. Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application. In Technical Digest - International Electron Devices Meeting, IEDM. February ed. Vol. 2015-February. Institute of Electrical and Electronics Engineers Inc. 2015. p. 11.2.1-11.2.4. 7047030 https://doi.org/10.1109/IEDM.2014.7047030
    Kawarada, Hiroshi ; Yamada, T. ; Xu, D. ; Tsuboi, H. ; Saito, T. ; Hiraiwa, A. / Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application. Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 11.2.1-11.2.4
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    abstract = "By forming a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50{\%} at a given gate bias. The maximum breakdown voltage (VB,max) of the MOSFET without a field plate is 996V at a gate-drain distance (LGD) of 9μm. We fabricated some MOSFETs satisfying VB,max/LGD > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.",
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    AU - Kawarada, Hiroshi

    AU - Yamada, T.

    AU - Xu, D.

    AU - Tsuboi, H.

    AU - Saito, T.

    AU - Hiraiwa, A.

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