Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application

H. Kawarada, T. Yamada, D. Xu, H. Tsuboi, T. Saito, A. Hiraiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

By forming a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50% at a given gate bias. The maximum breakdown voltage (VB,max) of the MOSFET without a field plate is 996V at a gate-drain distance (LGD) of 9μm. We fabricated some MOSFETs satisfying VB,max/LGD > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages11.2.1-11.2.4
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
Publication statusPublished - 2015 Feb 20
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
NumberFebruary
Volume2015-February
ISSN (Print)0163-1918

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period14/12/1514/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Kawarada, H., Yamada, T., Xu, D., Tsuboi, H., Saito, T., & Hiraiwa, A. (2015). Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 11.2.1-11.2.4). [7047030] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047030