Wideband CMOS decoupling power line for millimeter-wave applications

S. Amakawa, R. Goda, Kosuke Katayama, K. Takano, T. Yoshida, M. Fujishima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 ω in 20 GHz-170GHz and below 2 ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.

Original languageEnglish
Title of host publication2015 IEEE MTT-S International Microwave Symposium, IMS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479982752
DOIs
Publication statusPublished - 2015 Jul 24
Externally publishedYes
EventIEEE MTT-S International Microwave Symposium, IMS 2015 - Phoenix, United States
Duration: 2015 May 172015 May 22

Other

OtherIEEE MTT-S International Microwave Symposium, IMS 2015
CountryUnited States
CityPhoenix
Period15/5/1715/5/22

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Keywords

  • bypass capacitor
  • characteristic impedance
  • power integrity
  • radio-frequency interference
  • transmission line

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Signal Processing
  • Electrical and Electronic Engineering

Cite this

Amakawa, S., Goda, R., Katayama, K., Takano, K., Yoshida, T., & Fujishima, M. (2015). Wideband CMOS decoupling power line for millimeter-wave applications. In 2015 IEEE MTT-S International Microwave Symposium, IMS 2015 [7167043] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2015.7167043