Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability

Yasumasa Tsukamoto, Koji Nii, Susumu Imaoka, Yuji Oda, Shigeki Ohbayashi, Tomoaki Yoshizawa, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

43 Citations (Scopus)

Abstract

6T-SRAM cells in the sub-100 nm CMOS generation are now being exposed to a fatal risk that originates from large local Vth variability (σ V_Local). To achieve high-yield SRAM arrays in presence of random σV_Local component, we propose worst-case analysis that determines the boundary of the stable Vth region for the SRAM read/write DC margin (Vth curve). Applying this to our original 65 nm SPICE model, we demonstrate typical behavior of the Vth curve and show new criteria for discussing SRAM array stability with Vth variability.

Original languageEnglish
Title of host publicationProceedings of theICCAD-2005
Subtitle of host publicationInternational Conference on Computer-Aided Design
Pages398-405
Number of pages8
DOIs
Publication statusPublished - 2005 Dec 1
Externally publishedYes
EventICCAD-2005: IEEE/ACM International Conference on Computer-Aided Design, 2005 - San Jose, CA, United States
Duration: 2005 Nov 62005 Nov 10

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
Volume2005
ISSN (Print)1092-3152

Other

OtherICCAD-2005: IEEE/ACM International Conference on Computer-Aided Design, 2005
CountryUnited States
CitySan Jose, CA
Period05/11/605/11/10

Keywords

  • Design form manufacturability (DFM)
  • Local Vth variability
  • SRAM
  • Static noise margin

ASJC Scopus subject areas

  • Software
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

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    Tsukamoto, Y., Nii, K., Imaoka, S., Oda, Y., Ohbayashi, S., Yoshizawa, T., Makino, H., Ishibashi, K., & Shinohara, H. (2005). Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. In Proceedings of theICCAD-2005: International Conference on Computer-Aided Design (pp. 398-405). [1560101] (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD; Vol. 2005). https://doi.org/10.1109/ICCAD.2005.1560101