X-band 14W high efficiency internally-matched HFET

K. Mori*, J. Nishihara, H. Utsumi, A. Inoue, M. Miyazaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)


An X-Band 14W high efficiency internally-matched HFET has been developed. In order to achieve high efficiency, not only equal combining characteristics but also equal load impedance for each unit FET cell are designed in the input and output matching circuits using EM simulator. In addition to the power splitting and combining characteristics, the large signal load impedance of each FET cell is discussed. The degradation of the efficiency by unequal operation of each FET cell and by mismatch to the optimum load impedance are suppressed within 1% and 2%, respectively in the design. The developed HFET has achieved a power-added efficiency (PAE) of 49.8% and an output power of 41.6dBm(14.5W) in X-band.

Original languageEnglish
Title of host publication2008 IEEE MTT-S International Microwave Symposium Digest, MTT
Number of pages4
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE MTT-S International Microwave Symposium Digest, MTT - Atlanta, GA, United States
Duration: 2008 Jun 152008 Jun 20

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X


Conference2008 IEEE MTT-S International Microwave Symposium Digest, MTT
Country/TerritoryUnited States
CityAtlanta, GA


  • Combiner
  • Efficiency
  • HFET
  • Internally-matched FET
  • Microwave
  • Output power

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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