X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Zhixin Qin, Masakazu Kobayashi, Akihiko Yoshikavva

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11 Citations (Scopus)

Abstract

X-ray diffraction reciprocal space maps and pole figures were used to analyze the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray analysis and the relationships among various crystal axes of cubic and hexagonal phase GaN were analyzed with respect to V/III source-supply ratio. As for the growth conditions of the epitaxial layers, the V/III ratio was found to drastically affect the quality of the layers. High-temperature growth under near-stoichiometric conditions was necessary to obtain high quality epitaxial layers. It was found that inclusion of the hexagonal phase in the cubic GaN layers could be less than 0.4%, though previously reported typical c-GaN epitaxial layers included as much as 10-20% hexagonal phase GaN. On the basis of the measurements and analyses of reciprocal space maps and pole figures, it was revealed that the orientation of crystal axes of the hexagonal phase was unique in the present GaN epitaxial layers and they were different from those of previously reported c-GaN epitaxial layers.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume10
Issue number3
DOIs
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Epitaxial layers
Molecular beam epitaxy
X-Ray Diffraction
Poles
poles
molecular beam epitaxy
X ray diffraction
Growth
diffraction
x rays
X-Rays
Temperature
Crystals
Plasma sources
Growth temperature
Crystal orientation
gallium arsenide
x ray analysis
X rays
crystals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy",
abstract = "X-ray diffraction reciprocal space maps and pole figures were used to analyze the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray analysis and the relationships among various crystal axes of cubic and hexagonal phase GaN were analyzed with respect to V/III source-supply ratio. As for the growth conditions of the epitaxial layers, the V/III ratio was found to drastically affect the quality of the layers. High-temperature growth under near-stoichiometric conditions was necessary to obtain high quality epitaxial layers. It was found that inclusion of the hexagonal phase in the cubic GaN layers could be less than 0.4{\%}, though previously reported typical c-GaN epitaxial layers included as much as 10-20{\%} hexagonal phase GaN. On the basis of the measurements and analyses of reciprocal space maps and pole figures, it was revealed that the orientation of crystal axes of the hexagonal phase was unique in the present GaN epitaxial layers and they were different from those of previously reported c-GaN epitaxial layers.",
author = "Zhixin Qin and Masakazu Kobayashi and Akihiko Yoshikavva",
year = "1999",
doi = "10.1023/A:1008943911794",
language = "English",
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pages = "199--202",
journal = "Journal of Materials Science: Materials in Medicine",
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T1 - X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

AU - Qin, Zhixin

AU - Kobayashi, Masakazu

AU - Yoshikavva, Akihiko

PY - 1999

Y1 - 1999

N2 - X-ray diffraction reciprocal space maps and pole figures were used to analyze the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray analysis and the relationships among various crystal axes of cubic and hexagonal phase GaN were analyzed with respect to V/III source-supply ratio. As for the growth conditions of the epitaxial layers, the V/III ratio was found to drastically affect the quality of the layers. High-temperature growth under near-stoichiometric conditions was necessary to obtain high quality epitaxial layers. It was found that inclusion of the hexagonal phase in the cubic GaN layers could be less than 0.4%, though previously reported typical c-GaN epitaxial layers included as much as 10-20% hexagonal phase GaN. On the basis of the measurements and analyses of reciprocal space maps and pole figures, it was revealed that the orientation of crystal axes of the hexagonal phase was unique in the present GaN epitaxial layers and they were different from those of previously reported c-GaN epitaxial layers.

AB - X-ray diffraction reciprocal space maps and pole figures were used to analyze the cubic GaN epitaxial layers grown on (0 0 1) GaAs by r.f. plasma source MBE; the presence of hexagonal phase in cubic GaN layers was detected by high resolution x-ray analysis and the relationships among various crystal axes of cubic and hexagonal phase GaN were analyzed with respect to V/III source-supply ratio. As for the growth conditions of the epitaxial layers, the V/III ratio was found to drastically affect the quality of the layers. High-temperature growth under near-stoichiometric conditions was necessary to obtain high quality epitaxial layers. It was found that inclusion of the hexagonal phase in the cubic GaN layers could be less than 0.4%, though previously reported typical c-GaN epitaxial layers included as much as 10-20% hexagonal phase GaN. On the basis of the measurements and analyses of reciprocal space maps and pole figures, it was revealed that the orientation of crystal axes of the hexagonal phase was unique in the present GaN epitaxial layers and they were different from those of previously reported c-GaN epitaxial layers.

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