X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone

Akira M. Kurokawa, Shingo M. Ichimura

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Abstract

Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.

Original languageEnglish
Pages (from-to)L1606-L1608
JournalJapanese journal of applied physics
Volume34
Issue number12
DOIs
Publication statusPublished - 1995 Dec

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Keywords

  • Hydrogen termination
  • Low-temperature oxidation
  • Ozone
  • Si (111)
  • Silicon oxidation
  • Silicon oxide
  • Suboxide
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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