X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone

Akira M. Kurokawa, Shingo Ichimura

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.

Original languageEnglish
Pages (from-to)L1606-L1608
JournalJapanese Journal of Applied Physics
Volume34
Issue number12
DOIs
Publication statusPublished - 1995 Jan 1
Externally publishedYes

Fingerprint

Ozone
ozone
purity
X ray photoelectron spectroscopy
photoelectron spectroscopy
Silicon
Oxides
oxides
silicon
x rays
Oxygen
oxygen
Oxidation
oxidation

Keywords

  • Hydrogen termination
  • Low-temperature oxidation
  • Ozone
  • Si (111)
  • Silicon oxidation
  • Silicon oxide
  • Suboxide
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

X-ray photoelectron spectroscopy (Xps) analysis of oxide formation on silicon with high-purity ozone. / Kurokawa, Akira M.; Ichimura, Shingo.

In: Japanese Journal of Applied Physics, Vol. 34, No. 12, 01.01.1995, p. L1606-L1608.

Research output: Contribution to journalArticle

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