Zinc-blende MnTe: Epilayers and quantum well structures

S. M. Durbin; J. Han; O. Sungki; M. Kobayashi; D. R. Menke; R. L. Gunshor; Q. Fu; N. Pelekanos; A. V. Nurmikko; D. Li; J. Gonsalves; N. Otsuka

doi:10.1063/1.102091

Zinc-blende MnTe: Epilayers and quantum well structures

S. M. Durbin^*, J. Han, O. Sungki, M. Kobayashi, D. R. Menke, R. L. Gunshor, Q. Fu, N. Pelekanos, A. V. Nurmikko, D. Li, J. Gonsalves, N. Otsuka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

111 Citations (Scopus)

Abstract

Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

Original language	English
Pages (from-to)	2087-2089
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	20
DOIs	https://doi.org/10.1063/1.102091
Publication status	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Zinc-blende MnTe: Epilayers and quantum well structures",

abstract = "Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.",

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year = "1989",

doi = "10.1063/1.102091",

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journal = "Applied Physics Letters",

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T1 - Zinc-blende MnTe

T2 - Epilayers and quantum well structures

AU - Durbin, S. M.

AU - Han, J.

AU - Sungki, O.

AU - Kobayashi, M.

AU - Menke, D. R.

AU - Gunshor, R. L.

AU - Fu, Q.

AU - Pelekanos, N.

AU - Nurmikko, A. V.

AU - Li, D.

AU - Gonsalves, J.

AU - Otsuka, N.

PY - 1989

Y1 - 1989

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AB - Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

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ER -

Zinc-blende MnTe: Epilayers and quantum well structures

Abstract

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