Zinc-blende MnTe: Epilayers and quantum well structures

S. M. Durbin, J. Han, O. Sungki, M. Kobayashi, D. R. Menke, R. L. Gunshor, Q. Fu, N. Pelekanos, A. V. Nurmikko, D. Li, J. Gonsalves, N. Otsuka

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

Original languageEnglish
Pages (from-to)2087-2089
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number20
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Zinc-blende MnTe: Epilayers and quantum well structures'. Together they form a unique fingerprint.

  • Cite this

    Durbin, S. M., Han, J., Sungki, O., Kobayashi, M., Menke, D. R., Gunshor, R. L., Fu, Q., Pelekanos, N., Nurmikko, A. V., Li, D., Gonsalves, J., & Otsuka, N. (1989). Zinc-blende MnTe: Epilayers and quantum well structures. Applied Physics Letters, 55(20), 2087-2089. https://doi.org/10.1063/1.102091