Zinc-blende MnTe: Epilayers and quantum well structures

S. M. Durbin, J. Han, O. Sungki, Masakazu Kobayashi, D. R. Menke, R. L. Gunshor, Q. Fu, N. Pelekanos, A. V. Nurmikko, D. Li, J. Gonsalves, N. Otsuka

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Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

Original languageEnglish
Pages (from-to)2087-2089
Number of pages3
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 1989
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Durbin, S. M., Han, J., Sungki, O., Kobayashi, M., Menke, D. R., Gunshor, R. L., Fu, Q., Pelekanos, N., Nurmikko, A. V., Li, D., Gonsalves, J., & Otsuka, N. (1989). Zinc-blende MnTe: Epilayers and quantum well structures. Applied Physics Letters, 55(20), 2087-2089. https://doi.org/10.1063/1.102091