Zinc-blende MnTe: Epilayers and quantum well structures

S. M. Durbin; J. Han; O. Sungki; M. Kobayashi; D. R. Menke; R. L. Gunshor; Q. Fu; N. Pelekanos; A. V. Nurmikko; D. Li; J. Gonsalves; N. Otsuka

doi:10.1063/1.102091

Zinc-blende MnTe: Epilayers and quantum well structures

S. M. Durbin, J. Han, O. Sungki, M. Kobayashi, D. R. Menke, R. L. Gunshor, Q. Fu, N. Pelekanos, A. V. Nurmikko, D. Li, J. Gonsalves, N. Otsuka

Research output: Contribution to journal › Article › peer-review

108 Citations (Scopus)

Abstract

Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

Original language	English
Pages (from-to)	2087-2089
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	20
DOIs	https://doi.org/10.1063/1.102091
Publication status	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Zinc-blende MnTe: Epilayers and quantum well structures",

abstract = "Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.",

author = "Durbin, {S. M.} and J. Han and O. Sungki and M. Kobayashi and Menke, {D. R.} and Gunshor, {R. L.} and Q. Fu and N. Pelekanos and Nurmikko, {A. V.} and D. Li and J. Gonsalves and N. Otsuka",

year = "1989",

doi = "10.1063/1.102091",

language = "English",

volume = "55",

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T1 - Zinc-blende MnTe

T2 - Epilayers and quantum well structures

AU - Durbin, S. M.

AU - Han, J.

AU - Sungki, O.

AU - Kobayashi, M.

AU - Menke, D. R.

AU - Gunshor, R. L.

AU - Fu, Q.

AU - Pelekanos, N.

AU - Nurmikko, A. V.

AU - Li, D.

AU - Gonsalves, J.

AU - Otsuka, N.

PY - 1989

Y1 - 1989

N2 - Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

AB - Epilayers of the previously hypothetical zinc-blende MnTe have been grown by molecular beam epitaxy. Epitaxial layers (0.5 μm thick) of MnTe were characterized using x-ray diffraction and transmission electron microscopy; optical reflectance measurements indicate a band gap of ∼3.2 eV. A series of strained single quantum well structures was fabricated with zinc-blende MnTe forming the barrier to CdTe quantum well regions; photoluminescence spectra indicate optical transitions corresponding to strong electron and hole confinement.

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Zinc-blende MnTe: Epilayers and quantum well structures

Abstract

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