Zn-diffused In0.53Ga0.47As/InP avalanche photodetector

Yuichi Matsushima, Kazuo Sakai, Shigeyuki Akiba, Takaya Yamamoto

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

Original languageEnglish
Pages (from-to)466-468
Number of pages3
JournalApplied Physics Letters
Volume35
Issue number6
DOIs
Publication statusPublished - 1979
Externally publishedYes

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mesas
multiplication
avalanches
photometers
liquid phases
electron microscopes
illumination
electron beams
scanning
profiles
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Matsushima, Y., Sakai, K., Akiba, S., & Yamamoto, T. (1979). Zn-diffused In0.53Ga0.47As/InP avalanche photodetector. Applied Physics Letters, 35(6), 466-468. https://doi.org/10.1063/1.91171

Zn-diffused In0.53Ga0.47As/InP avalanche photodetector. / Matsushima, Yuichi; Sakai, Kazuo; Akiba, Shigeyuki; Yamamoto, Takaya.

In: Applied Physics Letters, Vol. 35, No. 6, 1979, p. 466-468.

Research output: Contribution to journalArticle

Matsushima, Y, Sakai, K, Akiba, S & Yamamoto, T 1979, 'Zn-diffused In0.53Ga0.47As/InP avalanche photodetector', Applied Physics Letters, vol. 35, no. 6, pp. 466-468. https://doi.org/10.1063/1.91171
Matsushima, Yuichi ; Sakai, Kazuo ; Akiba, Shigeyuki ; Yamamoto, Takaya. / Zn-diffused In0.53Ga0.47As/InP avalanche photodetector. In: Applied Physics Letters. 1979 ; Vol. 35, No. 6. pp. 466-468.
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