Zn-diffused In0.53Ga0.47As/InP avalanche photodetector

Yuichi Matsushima, Kazuo Sakai, Shigeyuki Akiba, Takaya Yamamoto

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37 Citations (Scopus)

Abstract

Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

Original languageEnglish
Pages (from-to)466-468
Number of pages3
JournalApplied Physics Letters
Volume35
Issue number6
DOIs
Publication statusPublished - 1979
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Matsushima, Y., Sakai, K., Akiba, S., & Yamamoto, T. (1979). Zn-diffused In0.53Ga0.47As/InP avalanche photodetector. Applied Physics Letters, 35(6), 466-468. https://doi.org/10.1063/1.91171