TY - GEN
T1 - ZnO
T2 - 6th Pacific Rim Conference on Ceramic and Glass Technology
AU - Yamamoto, Tetsuya
AU - Yamada, Takahiro
AU - Sakemi, Toshiyuki
AU - Shirakata, Sho
AU - Osada, Minoru
AU - Kishimoto, Seiichi
AU - Awai, Kiyoshi
AU - Makino, Hisao
AU - Mitsunaga, Tooru
PY - 2006
Y1 - 2006
N2 - The advantageous features of polycrystalline gallium (Ga)-doped ZnO (GZO) films, being cost-effective and easy to fabricate on a production scale, make them very attractive potential for use in transparent conductive electrode in flat display panel and thin film solar cells. In this work, GZO films have been prepared by reactive plasma deposition with non-traveling and traveling substrate mechanism. We have succeeded in fabricating 180 nm GZO films with low resistivity of 2.7 × 10-4 Ωcm and high transmittance more than 90 % in the visible wave length region on a glass substrate at temperature of 200 □ with a size up to 1m × 1m. On the basis of the analysis of data obtained by theoretical prediction and experimental study concerning micro-structural properties for GZO films, such as which sites Ga donors occupy, we have shown how to obtain electrical and optical properties required for application controlling the main process parameters, oxygen partial pressure.
AB - The advantageous features of polycrystalline gallium (Ga)-doped ZnO (GZO) films, being cost-effective and easy to fabricate on a production scale, make them very attractive potential for use in transparent conductive electrode in flat display panel and thin film solar cells. In this work, GZO films have been prepared by reactive plasma deposition with non-traveling and traveling substrate mechanism. We have succeeded in fabricating 180 nm GZO films with low resistivity of 2.7 × 10-4 Ωcm and high transmittance more than 90 % in the visible wave length region on a glass substrate at temperature of 200 □ with a size up to 1m × 1m. On the basis of the analysis of data obtained by theoretical prediction and experimental study concerning micro-structural properties for GZO films, such as which sites Ga donors occupy, we have shown how to obtain electrical and optical properties required for application controlling the main process parameters, oxygen partial pressure.
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M3 - Conference contribution
AN - SCOPUS:33751393413
SN - 047008295X
SN - 9780470082959
VL - 196
T3 - Ceramic Transactions
SP - 475
EP - 489
BT - Ceramic Transactions
Y2 - 11 September 2005 through 16 September 2005
ER -