ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

H. Jeon; J. Ding; A. V. Nurmikko; W. Xie; M. Kobayashi; R. L. Gunshor

doi:10.1063/1.106496

ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

H. Jeon^*, J. Ding, A. V. Nurmikko, W. Xie, M. Kobayashi, R. L. Gunshor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n⁺-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

Original language	English
Pages (from-to)	892-894
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	7
DOIs	https://doi.org/10.1063/1.106496
Publication status	Published - 1992 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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author = "H. Jeon and J. Ding and Nurmikko, {A. V.} and W. Xie and M. Kobayashi and Gunshor, {R. L.}",

year = "1992",

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T1 - ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Kobayashi, M.

AU - Gunshor, R. L.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

AB - pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

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JF - Applied Physics Letters

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ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

Abstract

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