Abstract
pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.
Original language | English |
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Pages (from-to) | 892-894 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 60 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1992 Dec 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)