ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

H. Jeon, J. Ding, A. V. Nurmikko, W. Xie, M. Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

Original languageEnglish
Pages (from-to)892-894
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number7
DOIs
Publication statusPublished - 1992 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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