pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1992 Dec 1|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)