ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

H. Jeon; J. Ding; A. V. Nurmikko; W. Xie; M. Kobayashi; R. L. Gunshor

doi:10.1063/1.106496

ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

H. Jeon^*, J. Ding, A. V. Nurmikko, W. Xie, M. Kobayashi, R. L. Gunshor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

57 Citations (Scopus)

Abstract

pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n⁺-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

Original language	English
Pages (from-to)	892-894
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	7
DOIs	https://doi.org/10.1063/1.106496
Publication status	Published - 1992 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{246f78380f734dd8b2db319bf209122a,

title = "ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications",

abstract = "pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.",

author = "H. Jeon and J. Ding and Nurmikko, {A. V.} and W. Xie and M. Kobayashi and Gunshor, {R. L.}",

year = "1992",

month = dec,

day = "1",

doi = "10.1063/1.106496",

language = "English",

volume = "60",

pages = "892--894",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Kobayashi, M.

AU - Gunshor, R. L.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

AB - pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

UR - http://www.scopus.com/inward/record.url?scp=0042659976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042659976&partnerID=8YFLogxK

U2 - 10.1063/1.106496

DO - 10.1063/1.106496

M3 - Article

AN - SCOPUS:0042659976

VL - 60

SP - 892

EP - 894

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -

ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

Abstract

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