ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

H. Jeon, J. Ding, A. V. Nurmikko, W. Xie, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

Original languageEnglish
Pages (from-to)892-894
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number7
DOIs
Publication statusPublished - 1992
Externally publishedYes

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display devices
molecular beam epitaxy
light emitting diodes
quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications. / Jeon, H.; Ding, J.; Nurmikko, A. V.; Xie, W.; Kobayashi, Masakazu; Gunshor, R. L.

In: Applied Physics Letters, Vol. 60, No. 7, 1992, p. 892-894.

Research output: Contribution to journalArticle

Jeon, H. ; Ding, J. ; Nurmikko, A. V. ; Xie, W. ; Kobayashi, Masakazu ; Gunshor, R. L. / ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications. In: Applied Physics Letters. 1992 ; Vol. 60, No. 7. pp. 892-894.
@article{246f78380f734dd8b2db319bf209122a,
title = "ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications",
abstract = "pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.",
author = "H. Jeon and J. Ding and Nurmikko, {A. V.} and W. Xie and Masakazu Kobayashi and Gunshor, {R. L.}",
year = "1992",
doi = "10.1063/1.106496",
language = "English",
volume = "60",
pages = "892--894",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Kobayashi, Masakazu

AU - Gunshor, R. L.

PY - 1992

Y1 - 1992

N2 - pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

AB - pn junction characteristics and LED action in ZnSe-based multilayers grown by molecular beam epitaxy is demonstrated. In particular, we show that (Zn,Cd)Se/ZnSe/Zn(S,Se) structures containing (Zn,Cd)Se quantum wells, grown on p-type GaAs epilayers, and designed with a heavily doped n+-ZnSe top contact layer may be appropriate for display device applications in the blue-green portion of the spectrum.

UR - http://www.scopus.com/inward/record.url?scp=0042659976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042659976&partnerID=8YFLogxK

U2 - 10.1063/1.106496

DO - 10.1063/1.106496

M3 - Article

AN - SCOPUS:0042659976

VL - 60

SP - 892

EP - 894

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

ER -