ZnSe-ZnTe strained-layer superlattices

A novel material for the future optoelectronic devices

Makoto Konagai, Masakazu Kobayashi, Ryuhei Kimura, Kiyoshi Takahashi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

ZnSe-ZnTe strained superlines (SLSs) were grown by molecular beam epitaxy 9MBE). Th optical properties of the ZnSe-ZnTe SLS were evaluated by photoluminescence (PL). The PL peak position was shifted by tailoring the structure of the superlattice. The luminescence color in the visible changed from blue-green to red. In order to obtain both p- and n-type conduction in wide-bandgap II-VI compound semiconductors, we have prepared ZnSe-ZnTe superlines with a modulation doping technique. When Sb was selectively doped in ZnTe layers, all the samples exhibited p-type conductivity with hole concentrations of (0.5-1.0)X1014cm-3. On the other hand, Ga-doped SLSs were type with electron concentrations of (2-7)X1013cm-3. Furthermore, the growth of ZnSe-ZnS SLS was also demostrated by metalorganic molecular beam epitaxy (MOMBE). Blue luminescence related. to the quantized levels in the SLS was detected.

Original languageEnglish
Pages (from-to)290-295
Number of pages6
JournalJournal of Crystal Growth
Volume86
Issue number1-4
DOIs
Publication statusPublished - 1990 Jan 1
Externally publishedYes

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Superlattices
optoelectronic devices
Molecular beam epitaxy
Optoelectronic devices
superlattices
Luminescence
Photoluminescence
molecular beam epitaxy
modulation doping
luminescence
photoluminescence
Hole concentration
Energy gap
Optical properties
Doping (additives)
Modulation
Color
color
optical properties
conduction

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

ZnSe-ZnTe strained-layer superlattices : A novel material for the future optoelectronic devices. / Konagai, Makoto; Kobayashi, Masakazu; Kimura, Ryuhei; Takahashi, Kiyoshi.

In: Journal of Crystal Growth, Vol. 86, No. 1-4, 01.01.1990, p. 290-295.

Research output: Contribution to journalArticle

Konagai, Makoto ; Kobayashi, Masakazu ; Kimura, Ryuhei ; Takahashi, Kiyoshi. / ZnSe-ZnTe strained-layer superlattices : A novel material for the future optoelectronic devices. In: Journal of Crystal Growth. 1990 ; Vol. 86, No. 1-4. pp. 290-295.
@article{262fc90eaf6d487782e09ecb1e7f72fb,
title = "ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices",
abstract = "ZnSe-ZnTe strained superlines (SLSs) were grown by molecular beam epitaxy 9MBE). Th optical properties of the ZnSe-ZnTe SLS were evaluated by photoluminescence (PL). The PL peak position was shifted by tailoring the structure of the superlattice. The luminescence color in the visible changed from blue-green to red. In order to obtain both p- and n-type conduction in wide-bandgap II-VI compound semiconductors, we have prepared ZnSe-ZnTe superlines with a modulation doping technique. When Sb was selectively doped in ZnTe layers, all the samples exhibited p-type conductivity with hole concentrations of (0.5-1.0)X1014cm-3. On the other hand, Ga-doped SLSs were type with electron concentrations of (2-7)X1013cm-3. Furthermore, the growth of ZnSe-ZnS SLS was also demostrated by metalorganic molecular beam epitaxy (MOMBE). Blue luminescence related. to the quantized levels in the SLS was detected.",
author = "Makoto Konagai and Masakazu Kobayashi and Ryuhei Kimura and Kiyoshi Takahashi",
year = "1990",
month = "1",
day = "1",
doi = "10.1016/0022-0248(90)90732-Z",
language = "English",
volume = "86",
pages = "290--295",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - ZnSe-ZnTe strained-layer superlattices

T2 - A novel material for the future optoelectronic devices

AU - Konagai, Makoto

AU - Kobayashi, Masakazu

AU - Kimura, Ryuhei

AU - Takahashi, Kiyoshi

PY - 1990/1/1

Y1 - 1990/1/1

N2 - ZnSe-ZnTe strained superlines (SLSs) were grown by molecular beam epitaxy 9MBE). Th optical properties of the ZnSe-ZnTe SLS were evaluated by photoluminescence (PL). The PL peak position was shifted by tailoring the structure of the superlattice. The luminescence color in the visible changed from blue-green to red. In order to obtain both p- and n-type conduction in wide-bandgap II-VI compound semiconductors, we have prepared ZnSe-ZnTe superlines with a modulation doping technique. When Sb was selectively doped in ZnTe layers, all the samples exhibited p-type conductivity with hole concentrations of (0.5-1.0)X1014cm-3. On the other hand, Ga-doped SLSs were type with electron concentrations of (2-7)X1013cm-3. Furthermore, the growth of ZnSe-ZnS SLS was also demostrated by metalorganic molecular beam epitaxy (MOMBE). Blue luminescence related. to the quantized levels in the SLS was detected.

AB - ZnSe-ZnTe strained superlines (SLSs) were grown by molecular beam epitaxy 9MBE). Th optical properties of the ZnSe-ZnTe SLS were evaluated by photoluminescence (PL). The PL peak position was shifted by tailoring the structure of the superlattice. The luminescence color in the visible changed from blue-green to red. In order to obtain both p- and n-type conduction in wide-bandgap II-VI compound semiconductors, we have prepared ZnSe-ZnTe superlines with a modulation doping technique. When Sb was selectively doped in ZnTe layers, all the samples exhibited p-type conductivity with hole concentrations of (0.5-1.0)X1014cm-3. On the other hand, Ga-doped SLSs were type with electron concentrations of (2-7)X1013cm-3. Furthermore, the growth of ZnSe-ZnS SLS was also demostrated by metalorganic molecular beam epitaxy (MOMBE). Blue luminescence related. to the quantized levels in the SLS was detected.

UR - http://www.scopus.com/inward/record.url?scp=0023165923&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023165923&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(90)90732-Z

DO - 10.1016/0022-0248(90)90732-Z

M3 - Article

VL - 86

SP - 290

EP - 295

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -