ZnSe/GaAs heterovalent interfaces

interface microstructure versus electrical properties

J. Qiu, D. R. Menke, Masakazu Kobayashi, R. L. Gunshor, Q. D. Qian, D. Li, N. Otsuka

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Epitaxial ZnSe/epitaxial GaAs interfaces are formed by molecular beam epitaxy and evaluated by several techniques including capacitance-voltage (C-V) measurements. The GaAs surface stoichiometry is systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer is made As deficient. The ZnSe/GaAs interfaces exhibiting low interface state densities are associated with the presence of an interfacial layer of zincblende Ga2Se3. In situ X-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at the interfacial layer. The character of Se 3d core level features from the interfacial region and from separately grown Ga2Se3 epilayers support the identification of the interfacial layer as Ga2Se3.

Original languageEnglish
Pages (from-to)747-751
Number of pages5
JournalJournal of Crystal Growth
Volume111
Issue number1-4
DOIs
Publication statusPublished - 1991 May 2
Externally publishedYes

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Interface states
Epilayers
Electric properties
electrical properties
microstructure
Microstructure
Core levels
Capacitance measurement
Voltage measurement
Molecular beam epitaxy
Stoichiometry
Nucleation
X ray photoelectron spectroscopy
zincblende
electrical measurement
stoichiometry
molecular beam epitaxy
capacitance
photoelectron spectroscopy
nucleation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

ZnSe/GaAs heterovalent interfaces : interface microstructure versus electrical properties. / Qiu, J.; Menke, D. R.; Kobayashi, Masakazu; Gunshor, R. L.; Qian, Q. D.; Li, D.; Otsuka, N.

In: Journal of Crystal Growth, Vol. 111, No. 1-4, 02.05.1991, p. 747-751.

Research output: Contribution to journalArticle

Qiu, J. ; Menke, D. R. ; Kobayashi, Masakazu ; Gunshor, R. L. ; Qian, Q. D. ; Li, D. ; Otsuka, N. / ZnSe/GaAs heterovalent interfaces : interface microstructure versus electrical properties. In: Journal of Crystal Growth. 1991 ; Vol. 111, No. 1-4. pp. 747-751.
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