ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu; Shota Hattori; Takeru Kizu; Wei Che Sun; Fukino Kazami; Yuki Hashimoto; Masakazu Kobayashi; Toshiaki Asahi

doi:10.1002/pssc.201510265

ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu^*, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (

Original language	English
Pages (from-to)	435-438
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	13
Issue number	7-9
DOIs	https://doi.org/10.1002/pssc.201510265
Publication status	Published - 2016 Jul 1

Keywords

ZnTe
heteroepitaxy
molecular beam epitaxy
sapphire

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201510265

Cite this

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title = "ZnTe layers on R - and S -plane sapphire substrates",

abstract = "ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (",

keywords = "ZnTe, heteroepitaxy, molecular beam epitaxy, sapphire",

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T1 - ZnTe layers on R - and S -plane sapphire substrates

AU - Nakasu, Taizo

AU - Hattori, Shota

AU - Kizu, Takeru

AU - Sun, Wei Che

AU - Kazami, Fukino

AU - Hashimoto, Yuki

AU - Kobayashi, Masakazu

AU - Asahi, Toshiaki

PY - 2016/7/1

Y1 - 2016/7/1

N2 - ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (

AB - ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (

KW - ZnTe

KW - heteroepitaxy

KW - molecular beam epitaxy

KW - sapphire

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ZnTe layers on R - and S -plane sapphire substrates

Abstract

Keywords

ASJC Scopus subject areas

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