ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi

    Research output: Contribution to journalArticle

    2 Citations (Scopus)


    ZnTe epilayers were grown on R -plane ($ 10 \bar 1 4 $) and S -plane ($ 10 \bar 1 1 $) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed.

    Original languageEnglish
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Publication statusAccepted/In press - 2016


    • Heteroepitaxy
    • Molecular beam epitaxy
    • Sapphire
    • ZnTe

    ASJC Scopus subject areas

    • Condensed Matter Physics

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