Hiroshi Kawarada

Scopus著者プロファイル

ウェブサイトhttps://w-rdb.waseda.jp/html/100000311_ja.html

年別の研究成果

Pureに変更を加えた場合、すぐここに表示されます。

9068 被引用数
51 h-index
313 Article
20 Conference contribution
11 Conference article
4 Paper
その他

350 - 359 / 359 件

2021
Ten years progress of electrical detection of heavy metal ions (Hmis) using various field-effect transistor (fet) nanosensors: A review
Falina, S., Syamsul, M., Rhaffor, N. A., Sal Hamid, S., Mohamed Zain, K. A., Abd Manaf, A. & Kawarada, H., 2021 12月, In: Biosensors. 11, 12, 478.
研究成果: Review article › 査読

Open Access
1 被引用数 (Scopus)
2022
-10 v Threshold Voltage High-Performance Normally-OFF C-Si Diamond MOSFET Formed by p⁺-Diamond-First and Silicon Molecular Beam Deposition Approaches
Fu, Y., Chang, Y., Kono, S., Hiraiwa, A., Kanehisa, K., Zhu, X., Xu, R., Xu, Y. & Kawarada, H., 2022 5月 1, In: IEEE Transactions on Electron Devices. 69, 5, p. 2236-2242 7 p.
研究成果: Article › 査読
-400 mA mm^-1Drain Current Density Normally-Off Polycrystalline Diamond MOSFETs
Zhu, X., Shao, S., Chang, Y., Zhang, R., Chung, S. Y. Y., Fu, Y., Bi, T., Huang, Y., An, K., Liu, J., Li, C. & Kawarada, H., 2022 5月 1, In: IEEE Electron Device Letters. 43, 5, p. 789-792 4 p.
研究成果: Article › 査読
580 v Breakdown Voltage in Vertical Diamond Trench MOSFETs with a P^--Drift Layer
Tsunoda, J., Niikura, N., Ota, K., Morishita, A., Hiraiwa, A. & Kawarada, H., 2022 1月 1, In: IEEE Electron Device Letters. 43, 1, p. 88-91 4 p.
研究成果: Article › 査読
An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices
Alhasani, R., Yabe, T., Iyama, Y., Oi, N., Imanishi, S., Nguyen, Q. N. & Kawarada, H., 2022 12月, In: Scientific reports. 12, 1, 4203.
研究成果: Article › 査読

Open Access
1 被引用数 (Scopus)
C-Si interface on SiO₂/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation
Zhu, X., Bi, T., Yuan, X., Chang, Y. H., Zhang, R., Fu, Y., Tu, J., Huang, Y., Liu, J., Li, C. & Kawarada, H., 2022 8月 15, In: Applied Surface Science. 593, 153368.
研究成果: Article › 査読
MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization
Liu, B., Bi, T., Fu, Y., Kudara, K., Imanishi, S., Liu, K., Dai, B., Zhu, J. & Kawarada, H., 2022 3月 1, In: IEEE Transactions on Electron Devices. 69, 3, p. 949-955 7 p.
研究成果: Article › 査読
1 被引用数 (Scopus)
Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain
Kudara, K., Arai, M., Suzuki, Y., Morishita, A., Tsunoda, J., Hiraiwa, A. & Kawarada, H., 2022 3月, In: Carbon. 188, p. 220-228 9 p.
研究成果: Article › 査読
pH Measurement at Elevated Temperature with Vessel Gate and Oxygen-Terminated Diamond Solution Gate Field Effect Transistors
Kawaguchi, S., Nomoto, R., Sato, H., Takarada, T., Chang, Y. H. & Kawarada, H., 2022 3月 1, In: Sensors. 22, 5, 1807.
研究成果: Article › 査読

Open Access

川原田 洋

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川原田洋