年別の研究成果
年別の研究成果
検索結果
-
Triple nitrogen-vacancy centre fabrication by C5N4H n ion implantation
Haruyama, M., Onoda, S., Higuchi, T., Kada, W., Chiba, A., Hirano, Y., Teraji, T., Igarashi, R., Kawai, S., Kawarada, H., Ishii, Y., Fukuda, R., Tanii, T., Isoya, J., Ohshima, T. & Hanaizumi, O., 2019 12月 1, In: Nature communications. 10, 1, 2664.研究成果: Article › 査読
Open Access14 被引用数 (Scopus) -
Ultrashallow TiC source/drain contacts in diamond MOSFETs formed by hydrogenation-last approach
Jingu, Y., Hirama, K. & Kawarada, H., 2010 5月, In: IEEE Transactions on Electron Devices. 57, 5, p. 966-972 7 p., 4.研究成果: Article › 査読
36 被引用数 (Scopus) -
Understanding the stability of a sputtered Al buffer layer for single-walled carbon nanotube forest synthesis
Ohashi, T., Kato, R., Tokune, T. & Kawarada, H., 2013 6月, In: Carbon. 57, p. 401-409 9 p.研究成果: Article › 査読
13 被引用数 (Scopus) -
Valence band electronic structures of heavily boron-doped superconducting diamond studied by synchrotron photoemission spectroscopy
Yokoya, T., Nakamura, T., Matsushita, T., Muro, T., Ikenaga, E., Kobata, M., Kobayashi, K., Takano, Y., Nagao, M., Takenouchi, T., Kawarada, H. & Oguchi, T., 2007, In: New Diamond and Frontier Carbon Technology. 17, 1, p. 11-20 10 p.研究成果: Article › 査読
4 被引用数 (Scopus) -
Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing
Inaba, M., Seki, A., Sato, K., Kushida, T., Kageura, T., Yamano, H., Hiraiwa, A. & Kawarada, H., 2017 9月, In: Physica Status Solidi (B) Basic Research. 254, 9, 1700040.研究成果: Article › 査読
6 被引用数 (Scopus) -
Vertically aligned carbon nanotube growth from Ni nanoparticles prepared by ion implantation
Iwasaki, T., Mejima, S., Koide, T., Morikane, R., Nakayama, H., Shinada, T., Ohdomari, I. & Kawarada, H., 2008 7月 1, In: Diamond and Related Materials. 17, 7-10, p. 1443-1446 4 p.研究成果: Article › 査読
1 被引用数 (Scopus) -
Vertical SNS weak-link Josephson junction fabricated from only boron-doped diamond
Watanabe, M., Kanomata, R., Kurihara, S., Kawano, A., Kitagoh, S., Yamaguchi, T., Takano, Y. & Kawarada, H., 2012 5月 14, In: Physical Review B - Condensed Matter and Materials Physics. 85, 18, 184516.研究成果: Article › 査読
14 被引用数 (Scopus) -
Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
Oi, N., Inaba, M., Okubo, S., Tsuyuzaki, I., Kageura, T., Onoda, S., Hiraiwa, A. & Kawarada, H., 2018 12月 1, In: Scientific reports. 8, 1, 10660.研究成果: Article › 査読
Open Access30 被引用数 (Scopus) -
Very high yield growth of vertically aligned single-walled carbon nanotubes by point-arc microwave plasma CVD
Zhong, G., Iwasaki, T., Honda, K., Furukawa, Y., Ohdomari, I. & Kawarada, H., 2005 3月 1, In: Chemical Vapor Deposition. 11, 3, p. 127-130 4 p.研究成果: Article › 査読
89 被引用数 (Scopus) -
Very low Schottky barrier height at carbon nanotube and silicon carbide interface
Inaba, M., Suzuki, K., Shibuya, M., Lee, C. Y., Masuda, Y., Tomatsu, N., Norimatsu, W., Hiraiwa, A., Kusunoki, M. & Kawarada, H., 2015 3月 23, In: Applied Physics Letters. 106, 12, 123501.研究成果: Article › 査読
11 被引用数 (Scopus) -
Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application
Kawarada, H., Yamada, T., Xu, D., Tsuboi, H., Saito, T. & Hiraiwa, A., 2015 2月 20, 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc., p. 11.2.1-11.2.4 7047030. (Technical Digest - International Electron Devices Meeting, IEDM; vol. 2015-February, no. February).研究成果: Conference contribution
12 被引用数 (Scopus)