Hiroshi Kawarada

Scopus著者プロファイル

ウェブサイトhttps://w-rdb.waseda.jp/html/100000311_ja.html

年別の研究成果

Pureに変更を加えた場合、すぐここに表示されます。

9068 被引用数
51 h-index
313 Article
20 Conference contribution
11 Conference article
4 Paper
その他

350 - 359 / 359 件

1987
Large area chemical vapour deposition of diamond particles and films using magneto-microwave plasma
Kawarada, H., Sheng, K. & Hiraki, A., 1987 6月, In: Japanese journal of applied physics. 26, 6A, p. 1032-1034 3 p.
研究成果: Article › 査読
108 被引用数 (Scopus)
1986
Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation
Ohdomari, I., Chikyow, T., Kawarada, H., Konuma, K., Kakumu, M., Hashimoto, K., Kimura, I. & Yoneda, K., 1986 12月 1, In: Journal of Applied Physics. 59, 9, p. 3073-3076 4 p.
研究成果: Article › 査読
2 被引用数 (Scopus)
High-resolution electron microscope study of silicon on insulator structure grown by lateral solid phase epitaxy
Kawarada, H., Ueno, T., Ohdomari, I., Kunii, Y. & Horiuchi, S., 1986 10月, In: Japanese journal of applied physics. 25, 10 A, p. L814-L817
研究成果: Article › 査読
5 被引用数 (Scopus)
High-resolution electron microscope study of the PtSi-Si(111) interface
Kawarada, H., Ishida, M., Nakanishi, J., Ohdomari, I. & Horiuchi, S., 1986 11月, In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 54, 5, p. 729-741 13 p.
研究成果: Article › 査読
14 被引用数 (Scopus)
1985
Influence of Pt atoms on the low temperature formation of epitaxial Pd monosilicide
Kawarada, H., Mizugaki, K. & Ohdomari, I., 1985, In: Journal of Applied Physics. 57, 2, p. 244-248 5 p.
研究成果: Article › 査読
3 被引用数 (Scopus)
1984

DOMAIN AND INTERFACE STRUCTURES OF EPITAXIAL PtSi.
Kawarada, H., Ohdomari, I. & Horiuchi, S., 1984 1月 1, Materials Research Society Symposia Proceedings. North-Holland, p. 429-434 6 p. (Materials Research Society Symposia Proceedings; vol. 25).
研究成果: Conference contribution

3 被引用数 (Scopus)
Structural study of ptsi/(111)si interface with high-resolution electron microscopy
Kawarada, H., Ohdomari, I. & Horiuchi, S., 1984 10月, In: Japanese journal of applied physics. 23, 10, p. L799-L802
研究成果: Article › 査読
6 被引用数 (Scopus)
1983
Reduction of contact resistivity by As redistribution during Pd ₂Si formation
Ohdomari, I., Hori, M., Maeda, T., Ogura, A., Kawarada, H., Hamamoto, T., Sano, K., Tu, K. N., Wittmer, M., Kimura, I. & Yoneda, K., 1983, In: Journal of Applied Physics. 54, 8, p. 4679-4682 4 p.
研究成果: Article › 査読
12 被引用数 (Scopus)
1980
Annealing behavior of spin density in UHV evaporated amorphous silicon
Yonehara, T., Saitoh, T., Kawarada, H., Hirata, T., Kakumu, M. & Ohdomari, I., 1980, In: "Physics Letters, Section A: General, Atomic and Solid State Physics". 78, 2, p. 192-194 3 p.
研究成果: Article › 査読
4 被引用数 (Scopus)

川原田 洋

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川原田洋