年別の研究成果
年別の研究成果
フィンガープリント
Masahide Inuishiが活動している研究トピックを掘り下げます。このトピックラベルは、この研究者の研究成果に基づきます。これらがまとまってユニークなフィンガープリントを構成します。
- 1 類似のプロファイル
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A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss
Liu, S., Zhang, Y., Zhang, Z. & Inuishi, M., 2022, 6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022. Institute of Electrical and Electronics Engineers Inc., p. 204-206 3 p. (6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022).研究成果: Conference contribution
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Lateral P-channel IGBT on SOI with Double Top RESURF Layers for Emitter Follower Type Complementary IGBT
Zhang, ZI., Kazuki, O., Kong, T., Feng, Z., Liu, S. & Inuishi, M., 2022, 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc., p. 153-156 4 p. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2022-May).研究成果: Conference contribution
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Backside layout design of Snapback-free RCIGBT with multiple-cell
Chang, Z., Zhu, X. & Inuishi, M., 2019, In: Lecture Notes in Engineering and Computer Science. 2239, p. 299-303 5 p.研究成果: Conference article › 査読
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On the scaling limit of the Si-IGBTs with very narrow mesa structure
Eikyu, K., Sakai, A., Matsuura, H., Nakazawa, Y., Akiyama, Y., Yamaguchi, Y. & Inuishi, M., 2016 7月 25, Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., p. 211-214 4 p. 7520815. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; vol. 2016-July).研究成果: Conference contribution
38 被引用数 (Scopus) -
Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation
Kawabata, K., Tanizawa, M., Ishikawa, K., Inoue, Y., Inuishi, M. & Nishimura, T., 2011 11月 1, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. p. 55-58 4 p. 6035048. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).研究成果: Conference contribution
3 被引用数 (Scopus)