犬石 昌秀

教授(任期付)

  • 808 引用
  • 15 h指数
1976 …2019

年単位の研究成果

Pureに変更を加えた場合、すぐここに表示されます。

研究成果

  • 808 引用
  • 15 h指数
  • 41 Article
  • 39 Conference article
  • 13 Conference contribution
  • 8 Paper
フィルター
Paper
2005

A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

Okagaki, T., Tanizawa, M., Fujinaga, M., Kunikiyo, T., Yuki, H., Ishikawa, K., Nishikawa, Y., Eimori, T., Inuishi, M. & Oji, Y., 2005 11 15, p. 219-222. 4 p.

研究成果: Paper

2004

Ultra-high-speed and low-power SOI CMOS technology with body-tied hybrid trench isolation structure

Hirano, Y., Ipposhi, T., Thai, D. H., Iwamatsu, T., Ikeda, T., Tsujiuchi, M., Maegawa, S., Inuishi, M. & Ohji, Y., 2004, p. 60-64. 5 p.

研究成果: Paper

1 引用 (Scopus)
2002

Sub-1 μm2 high density embedded SRAM technologies for 100 nm generation SOC and beyond

Tomita, K., Hashimoto, K., Inbe, T., Oashi, T., Tsukamoto, K., Nishioka, Y., Matsuura, M., Eimori, T., Inuishi, M., Miyanaga, I., Nakamura, M., Kishimoto, T., Yamada, T., Eriguchi, K., Yuasa, H., Satake, T., Kajiya, A. & Ogura, M., 2002 1 1, p. 14-15. 2 p.

研究成果: Paper

9 引用 (Scopus)
2000

Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

Eikyu, K., Takashino, H., Kidera, M., Teramoto, A., Umeda, H., Ishikawa, K., Kotani, N. & Inuishi, M., 2000 1 1, p. 257-260. 4 p.

研究成果: Paper

1 引用 (Scopus)

Suppression of stress induced drain leakage current of SOI MOSFETs by using partial trench isolation technology

Iwamatsu, T., Ipposhi, T., Uchida, T., Maegawa, S. & Inuishi, M., 2000 12 1, p. 80-81. 2 p.

研究成果: Paper

4 引用 (Scopus)
1999

Bulk-layout-compatible 0.18 μm SOI-CMOS technology using body-fixed partial trench isolation (PTI)

Hirano, Y., Maeda, S., Matsumoto, T., Nii, K., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Kawashima, H., Maegawa, S., Inuishi, M. & Nishimura, T., 1999 12 1, p. 131-132. 2 p.

研究成果: Paper

4 引用 (Scopus)
1992

Proximity gettering of heavy metals by high energy ion implantation

Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., Shinyashiki, H. & Shingyoji, T., 1992, p. 398-400. 3 p.

研究成果: Paper

2 引用 (Scopus)
1991

Hot carrier effect of AC stress on P-MOSFETs

Shimizu, S., Kusunoki, S., Inuishi, M., Tsukamoto, K. & Akasaka, Y., 1991 1 1, p. 231-233. 3 p.

研究成果: Paper

1 引用 (Scopus)