犬石 昌秀

教授(任期付)

  • 799 引用
  • 15 h指数
1976 …2019

Research output per year

Pureに変更を加えた場合、すぐここに表示されます。

研究成果

  • 799 引用
  • 15 h指数
  • 40 Article
  • 39 Conference article
  • 13 Conference contribution
  • 8 Paper
フィルター
Article
2007

A 65-nm SoC embedded 6T-SRAM designed for manufacturability with read and write operation stabilizing circuits

Ohbayashi, S., Yabuuchi, M., Nil, K., Tsukamoto, Y., Imaoka, S., Oda, Y., Yoshihara, T., Igarashi, M., Takeuchi, M., Kawashima, H., Yamaguchi, Y., Tsukamoto, K., Inuishi, M., Makino, H., Ishibashi, K. & Shinohara, H., 2007 4 1, : : IEEE Journal of Solid-State Circuits. 42, 4, p. 820-829 10 p.

研究成果: Article

84 引用 (Scopus)
2005

Novel shallow trench isolation process from viewpoint of total strain process design for 45 nm node devices and beyond

Ishibashi, M., Horita, K., Sawada, M., Kitazawa, M., Igarashi, M., Kuroi, T., Eimori, T., Kobayashi, K., Inuishi, M. & Ohji, Y., 2005 4 1, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 4 B, p. 2152-2156 5 p.

研究成果: Article

12 引用 (Scopus)
2004
13 引用 (Scopus)
2003

An artificial fingerprint device (AFD): A study of identification number applications utilizing characteristics variation of polycrystalline silicon TFTs

Maeda, S., Kuriyama, H., Ipposhi, T., Maegawa, S., Inoue, Y., Inuishi, M., Kotani, N. & Nishimura, T., 2003 6 1, : : IEEE Transactions on Electron Devices. 50, 6, p. 1451-1458 8 p.

研究成果: Article

20 引用 (Scopus)
2002
11 引用 (Scopus)

Clarification of floating-body effects on drive current and short channel effect in deep sub-0.25 μm partially depleted SOI MOSFETs

Matsumoto, T., Maeda, S., Hirano, Y., Eikyu, K., Yamaguchi, Y., Maegawa, S., Inuishi, M. & Nishimura, T., 2002 1 1, : : IEEE Transactions on Electron Devices. 49, 1, p. 55-60 6 p.

研究成果: Article

5 引用 (Scopus)
2001

Bulk-layout-compatible 0.18-μm SOI-CMOS technology using body-tied partial-trench-isolation (PTI)

Hirano, Y., Maeda, S., Matsumoto, T., Nii, K., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Kawashima, H., Maegawa, S., Inuishi, M. & Nishimura, T., 2001 12 1, : : IEEE Transactions on Electron Devices. 48, 12, p. 2816-2822 7 p.

研究成果: Article

8 引用 (Scopus)

Feasibility of 0.18 μm SOI CMOS technology using hybrid trench isolation with high resistivity substrate for embedded RF/analog applications

Maeda, S., Wada, Y., Yamamoto, K., Komurasaki, H., Matsumoto, T., Hirano, Y., Iwamatsu, T., Yamaguchi, Y., Ipposhi, T., Ueda, K., Mashiko, K., Maegawa, S. & Inuishi, M., 2001 9 1, : : IEEE Transactions on Electron Devices. 48, 9, p. 2065-2073 9 p.

研究成果: Article

17 引用 (Scopus)
2000

Direct measurement of transient drain currents in partially-depleted SOI N-channel MOSFETs using a nuclear microprobe for highly reliable device designs

Iwamatsu, T., Nakayama, K., Takaoka, H., Takai, M., Yamaguchi, Y., Maegawa, S., Inuishi, M., Kinomura, A., Horino, Y. & Nlshimura, T., 2000 12 1, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 39, 4 B, p. 2236-2240 5 p.

研究成果: Article

9 引用 (Scopus)
3 引用 (Scopus)
1998

Approaches to extra low voltage dram operation by soi-dram

Eimori, T., Oashi, T., Morishita, F., Iwamatsu, T., Yamaguchi, Y., Okuda, F., Shimomura, K. N. I., Shimano, H., Sakashita, N., Arimoto, K., Inoue, Y., Komori, S., Inuishi, M., Nishimura, T. & Miyoshi, H., 1998 12 1, : : IEEE Transactions on Electron Devices. 45, 5, p. 1000-1009 10 p.

研究成果: Article

15 引用 (Scopus)
1997

A 1-V 46-ns 16-Mb SOI-DRAM with body control technique

Shimomura, K., Shimano, H., Sakashita, N., Okuda, F., Oashi, T., Yamaguchi, Y., Eimori, T., Inuishi, M., Arimoto, K., Maegawa, S., Inoue, Y., Komori, S. & Kyuma, K., 1997 11 1, : : IEEE Journal of Solid-State Circuits. 32, 11, p. 1712-1718 7 p.

研究成果: Article

6 引用 (Scopus)

Application of nitrogen implantation to ULSI

Murakami, T., Kuroi, T., Kawasaki, Y., Inuishi, M., Matsui, Y. & Yasuoka, A., 1997 1, : : Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 121, 1-4, p. 257-261 5 p.

研究成果: Article

25 引用 (Scopus)
4 引用 (Scopus)
1 引用 (Scopus)

The effects on metal oxide semiconductor field effect transistor properties of nitrogen implantation into p+ polysilicon gate

Yasuoka, A., Kuroi, T., Shimizu, S., Shirahata, M., Okumura, Y., Inoue, Y., Inuishi, M., Nishimura, T. & Miyoshi, H., 1997 12 1, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36, 2, p. 617-622 6 p.

研究成果: Article

9 引用 (Scopus)
1996

Clarification of nitridation effect on oxide formation methods

Kuroi, T., Shirahata, M., Okumura, Y., Shimizu, S., Teramoto, A., Anma, M., Inuishi, M. & Miyoshi, H., 1996 2 1, : : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35, 2 SUPPL. B, p. 1454-1459 6 p.

研究成果: Article

8 引用 (Scopus)
3 引用 (Scopus)
3 引用 (Scopus)
1995

New p-mosfet hot-carrier degradation model for bi-directional operation

Shimizu, S., Tanizawa, M., Kusunoki, S., Inuishi, M. & Tsubouchi, N., 1995 2, : : Japanese journal of applied physics. 34, 2S, p. 889-894 6 p.

研究成果: Article

2 引用 (Scopus)
16 引用 (Scopus)
1994

Bipolar transistor with a buried layer formed by high-energy ion implantation for subhalf-micron bipolar-complementary metal oxide semiconductor LSIs

Kuroi, T., Kawasaki, Y., Ishigaki, Y., Kinoshita, Y., Inuishi, M., Tsukamoto, K. & Tsubouchi, N., 1994 1 1, : : Japanese journal of applied physics. 33, 1, p. 541-545 5 p.

研究成果: Article

2 引用 (Scopus)

Deep submicron field isolation with buried insulator between polysilicon electrodes (BIPS)

Shimizu, M., Inuishi, M., Tsukamoto, K., Arima, H. & Miyoshi, H., 1994 8 1, : : IEICE Transactions on Electronics. E77-C, 8, p. 1369-1375 7 p.

研究成果: Article

1993

Novel CMOS structure with polysilicon source/drain (PSD) transistors by self-aligned silicidation

Shimizu, M., Yamaguchi, T., Inuishi, M. & Tsukamoto, K., 1993 4 1, : : IEICE Transactions on Electronics. E76-C, 4, p. 532-540 9 p.

研究成果: Article

1 引用 (Scopus)

Proximity gettering of heavy metals by high-energy ion implantation

Kuroi, T., Kawasaki, Y., Komori, S., Fukumoto, K., Inuishi, M., Tsukamoto, K., Shinyashiki, H. & Shingyoji, T., 1993 1, : : Japanese journal of applied physics. 32, 1 S, p. 303-307 5 p.

研究成果: Article

33 引用 (Scopus)
1991

Graded-Junction Gate/n Overlapped LDD MOSFET Structures for High Hot-Carrier Reliability

Okumura, Y., Kunikiyo, T., Ogoh, I., Genjo, H., Inuishi, M., Nagatomo, M. & Matsukawa, T., 1991 12, : : IEEE Transactions on Electron Devices. 38, 12, p. 2647-2656 10 p.

研究成果: Article

12 引用 (Scopus)
1988

High-performance 0.5μm transistors

Inuishi, M., 1988 9 1, : : Mitsubishi Electric Advance. 44, p. 6-8 3 p.

研究成果: Article

1987
1 引用 (Scopus)
1983
18 引用 (Scopus)
1982

Vapor growth of thin heteroepitaxial InP films on CdS

Inuishi, M. & Wessels, B. W., 1982 2 19, : : Thin Solid Films. 88, 3, p. 195-202 8 p.

研究成果: Article

1 引用 (Scopus)
1981

Deep hole traps in VPE p-type InP

Inuishi, M. & Wessels, B. W., 1981 9 17, : : Electronics Letters. 17, 19, p. 685-686 2 p.

研究成果: Article

6 引用 (Scopus)
1980

The Chemical Vapor Deposition of Polycrystalline InP

Inuishi, M. & Wessels, B. W., 1980, : : Journal of the Electrochemical Society. 127, 12, p. 2747-2750 4 p.

研究成果: Article

7 引用 (Scopus)
1976

A thermally produced large single crystal of CuZnGa martensite

Saburi, T., Nenno, S. & Inuishi, M., 1976 10, : : Scripta Metallurgica. 10, 10, p. 875-877 3 p.

研究成果: Article

1 引用 (Scopus)