小林 正和

研究成果

年別の研究成果 1983 1990 1991 1992 1993 2014 2016 2017 2022

• 2867 被引用数
• 24 h-index
• 161 Article
• 18 Conference article
• 10 Conference contribution
• 7 Paper
• 2 その他
  • 1 Letter
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• 2004

  Identification of the Human Bronchial Tissues by the Spectroscopic Image Analysis

  Samejima, S. & Kobayashi, M., 2004 1月, In: IEEJ Transactions on Electronics, Information and Systems. 124, 9, p. 1738-1743 6 p.

  研究成果: Article › 査読

  • Image analysis 100%
  • Ultraviolet lasers 92%
  • Tissue 88%
  • Semiconductor lasers 64%
  • Light sources 56%

• Spectroscopic studies of autofluorescence substances existing in human tissue: Influences of lactic acid and porphyrins

  Ueda, Y. & Kobayashi, M., 2004 7月 10, In: Applied Optics. 43, 20, p. 3993-3998 6 p.

  研究成果: Article › 査読

  • Porphyrins 100%
  • Fluorophores 95%
  • lactic acid 80%
  • Lactic acid 77%
  • porphyrins 71%
  9 被引用数 (Scopus)
• 2003

  Low temperature treatment of the (001) ZnTe substrate surface with the assist of atomic hydrogen

  Tsutsumi, K., Terakado, H., Enami, M. & Kobayashi, M., 2003 7月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 4, p. 1959-1962 4 p.

  研究成果: Article › 査読

  • Hydrogen 100%
  • Substrates 88%
  • Nucleation 87%
  • hydrogen 77%
  • nucleation 62%
  18 被引用数 (Scopus)

• Spectroscopic imaging and the characterization of the autofluorescence properties of human bronchus tissues using UV laser diodes

  Kobayashi, M., Sawada, R. & Ueda, Y., 2003 3月, In: IEEE Journal on Selected Topics in Quantum Electronics. 9, 2, p. 142-147 6 p.

  研究成果: Article › 査読

  • bronchi 100%
  • Semiconductor lasers 75%
  • ultraviolet lasers 64%
  • Wavelength 53%
  • Tissue 51%
  2 被引用数 (Scopus)
• 2002

  Diffusion profiles of Se in bulk ZnTe

  Kobayashi, M., Terakado, H., Sawada, R., Arakawa, A. & Sato, K., 2002 8月 29, In: Physica Status Solidi (B) Basic Research. 229, 1, p. 265-268 4 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Ternary alloys 42%
  • Substrates 39%
  • Alloy 38%
  • Thermal diffusion 37%
  1 被引用数 (Scopus)

• Spectroscopic analysis of the autofluorescence from human bronchus using an ultraviolet laser diode

  Kobayashi, M., Shibuya, K., Hoshino, H. & Fujisawa, T., 2002 10月, In: Journal of Biomedical Optics. 7, 4, p. 603-608 6 p.

  研究成果: Article › 査読

  • Ultraviolet lasers 100%
  • Elastin 95%
  • bronchi 92%
  • Spectroscopic analysis 90%
  • elastin 70%
  18 被引用数 (Scopus)
• 2001

  RAV (reparameterized angle variations) algorithm for online handwriting recognition

  Kobayashi, M., Masaki, S., Miyamoto, O., Nakagawa, Y., Komiya, Y. & Matsumoto, T., 2001 12月 1, In: International Journal on Document Analysis and Recognition. 3, 3, p. 181-191 11 p.

  研究成果: Article › 査読

  • Agriculture 100%
  • Trajectories 63%
  • Experiments 32%
  10 被引用数 (Scopus)
• 2000

  Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates

  Jia, A., Furushima, T., Kobayashi, M., Kato, Y., Shimotomai, M., Yoshikawa, A. & Takahashi, K., 2000, In: Journal of Crystal Growth. 214, p. 1085-1090 6 p., 625.

  研究成果: Article › 査読

  • Epilayers 100%
  • Light Green 73%
  • mixed crystals 70%
  • Crystals 58%
  • emitters 48%
  9 被引用数 (Scopus)

• Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

  Kobayashi, M., Kitamura, K., Umeya, H., Jia, A. W., Yoshikawa, A., Shimotomai, M., Kato, Y. & Takahashi, K., 2000 5月, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18, 3, p. 1684-1687 4 p.

  研究成果: Article › 査読

  • Photoluminescence 100%
  • Molecular beam epitaxy 95%
  • Reflection high energy electron diffraction 63%
  • Wetting 62%
  • Light emitting diodes 61%
  17 被引用数 (Scopus)

• Spectroscopy of self-assembled Cds quantum dots in ZnSe

  Zhou, H., Nurmikko, A. V., Nakamura, S., Kitamura, K., Umeya, H., Jia, A., Kobayashi, M., Yoshikawa, A., Shimotomai, M. & Kato, Y., 2000 10月, In: Journal of Applied Physics. 88, 8, p. 4725-4728 4 p.

  研究成果: Article › 査読

  • excitons 100%
  • quantum dots 98%
  • spectroscopy 66%
  • excitation 61%
  1 被引用数 (Scopus)

• Surface and microstructural characterization of homoepitaxial silicon grown by pulsed laser deposition

  Pelt, J. S., Magaña, R., Ramsey, M. E., Poindexter, E., Atwell, S., Zheng, J. P., Durbin, S. M. & Kobayashi, M., 2000, In: Materials Research Society Symposium - Proceedings. 616, p. 75-80 6 p.

  研究成果: Article › 査読

  • Pulsed laser deposition 100%
  • Pulsed Laser Deposition 85%
  • pulsed laser deposition 61%
  • Characterization (materials science) 56%
  • Silicon 50%
• 1999

  Luminescence properties of CdS quantum dots on ZnSe

  Kobayashi, M., 1999, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17, 5, p. 2005-2008 4 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Photoluminescence 90%
  • Luminescence 81%
  • Buffer layers 59%
  • quantum dots 42%
  11 被引用数 (Scopus)

• Origin of the tilt of crystalline axis influenced by the N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs

  Hayashi, H., Hayashida, A., Jia, A. W., Kobayashi, M., Shimotomai, M., Kato, Y., Yoshikawa, A. & Takahashi, K., 1999 11月, In: Physica Status Solidi (B) Basic Research. 216, 1, p. 241-245 5 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Crystalline materials 61%
  • Cubic Space Group 48%
  • incidence 47%
  1 被引用数 (Scopus)

• X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

  Qin, Z., Kobayashi, M. & Yoshikavva, A., 1999, In: Journal of Materials Science: Materials in Electronics. 10, 3, p. 199-202 4 p.

  研究成果: Article › 査読

  • gallium arsenide 100%
  • Molecular beam epitaxy 91%
  • Epitaxial films 89%
  • Molecular Beam Epitaxy 84%
  • Epitaxial Film 83%
  12 被引用数 (Scopus)
• 1998

  Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN

  Nagano, H., Qin, Z., Jia, A., Kato, Y., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 265-269 5 p.

  研究成果: Article › 査読

  • Epitaxial growth 100%
  • Hydrogen 56%
  • Substrates 50%
  • hydrogen 43%
  • Monolayers 37%
  11 被引用数 (Scopus)

• Atomically-Flat GaAs(001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

  Qin, Z., Jia, A., Kobayashi, M. & Yoshikawa, A., 1998 11月, In: Shinku/Journal of the Vacuum Society of Japan. 41, 11, p. 950-954 5 p.

  研究成果: Article › 査読

  Open Access

  • Molecular beam epitaxy 100%
  • Cubic Space Group 53%
  • Hydrogen 51%
  • Substrates 45%
  • hydrogen 39%

• Bright electroluminescence from CdS quantum dot LED structures

  Nakamura, S., Kitamura, K., Umeya, H., Jia, A., Kobayashi, M., Yoshikawa, A., Shimotomai, M., Kato, Y. & Takahashi, K., 1998 12月 10, In: Electronics Letters. 34, 25, p. 2435-2436 2 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Electroluminescence 87%
  • Luminescence 81%
  • Light emitting diodes 54%
  • Wavelength 48%
  18 被引用数 (Scopus)

• Hexagon formation in photorefractive crystals as mirrorless coherent oscillation

  Uesu, Y., Ueno, A., Kobayashi, M. & Odoulov, S., 1998 7月, In: Journal of the Optical Society of America B: Optical Physics. 15, 7, p. 2065-2069 5 p.

  研究成果: Article › 査読

  • Photorefractive Crystal 100%
  • hexagons 61%
  • Hexagon 52%
  • Four-wave Mixing 46%
  • Oscillation 38%
  2 被引用数 (Scopus)

• High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy

  Qin, Z. X., Nagano, H., Sugure, Y., Jia, A. W., Kobayashi, M., Kato, Y., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 425-429 5 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • X ray diffraction analysis 81%
  • X rays 58%
  • molecular beam epitaxy 54%
  16 被引用数 (Scopus)

• MBE growth and characterization of ZnS_1-xTe_x and Zn_1-yMg_yS_1-xTe_x alloys

  Kobayashi, M., Setiagung, C., Wakao, K., Nakamura, S., Yoshikawa, A. & Takahashi, K., 1998, In: Journal of Crystal Growth. 184-185, p. 66-69 4 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Ohmic contacts 97%
  • Zinc Selenide 58%
  • Characterization (materials science) 56%
  • Epilayers 54%
  5 被引用数 (Scopus)

• MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

  Yoshikawa, A., Qin, Z., Nagano, H., Sugure, Y., Jia, A., Kobayashi, M., Kato, Y. & Takahashi, K., 1998, In: Materials Science Forum. 264-268, PART 2, p. 1221-1224 4 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Cubic Space Group 48%
  • Hydrogen 46%
  • Hexagonal Space Group 46%
  3 被引用数 (Scopus)

• Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe

  Kobayashi, M., Nakamura, S., Wakao, K., Yoshikawa, A. & Takahashi, K., 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1316-1320 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Molecular beam epitaxy 86%
  • Linewidth 69%
  • Thin films 52%
  • molecular beam epitaxy 47%
  10 被引用数 (Scopus)

• Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

  Taniyasu, Y., Ito, R., Shimoyama, N., Kurihara, M., Jia, A., Kato, Y., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 305-309 5 p.

  研究成果: Article › 査読

  • Spectroscopic ellipsometry 100%
  • Metallorganic vapor phase epitaxy 96%
  • Buffer layers 78%
  • monomethylhydrazines 66%
  • Ellipsometry 60%
  11 被引用数 (Scopus)
• 1997

  Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

  Yamaguchi, K., Qin, Z., Nagano, H., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1997 10月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 36, 10 SUPPL. B, p. L1367-L1369

  研究成果: Article › 査読

  • Irradiation 100%
  • Hydrogen 77%
  • irradiation 62%
  • hydrogen 59%
  • Reflection high energy electron diffraction 40%
  17 被引用数 (Scopus)
• 1996

  Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuity

  Yoshida, T., Nagatake, T., Kobayashi, M. & Yoshikawa, A., 1996 2月, In: Journal of Electronic Materials. 25, 2, p. 195-199 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Band structure 77%
  • Heterojunctions 72%
  • Valence Band 61%
  • Electronic Band Structure 55%
  1 被引用数 (Scopus)

• Phase instability of n-CdS grown by molecular-beam epitaxy

  Yamada, T., Setiagung, C., Jia, A. W., Kobayashi, M. & Yoshikawa, A., 1996 1月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14, 3, p. 2371-2373 3 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Annealing 64%
  • Crystal structure 55%
  • molecular beam epitaxy 54%
  • wurtzite 51%
  8 被引用数 (Scopus)

• Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

  Miyachi, M., Ohira, Y., Komatsu, S., Kurihara, M., Shimoyama, N., Kobayashi, M., Kato, Y. & Yoshikawa, A., 1996 2月, In: Journal of Crystal Growth. 159, 1-4, p. 261-265 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Metallorganic vapor phase epitaxy 97%
  • Doping (additives) 61%
  • Monitoring 31%
  • Doping Material 24%
  2 被引用数 (Scopus)

• Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga₂Se₃ interfacial layer

  Yoshida, T., Nagatake, T., Kobayashi, M. & Yoshikawa, A., 1996 2月, In: Journal of Crystal Growth. 159, 1-4, p. 750-753 4 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Valence bands 99%
  • Valence Band 61%
  • discontinuity 49%
  • valence 40%
  2 被引用数 (Scopus)
• 1995

  Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii-vi compounds

  Jia, A. W., Kobayashi, M. & Yoshikawa, A., 1995 3月 1, In: Journal of Electronic Materials. 24, 3, p. 117-121 5 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Ternary alloys 80%
  • quaternary alloys 71%
  • ternary alloys 60%
  • superlattices 50%
  5 被引用数 (Scopus)

• Growth Kinetics in MOMBE‐ALE of ZnSe and CdSe as Determined by a New In‐Situ Optical Probing Method

  Yoshikawa, A., Kobayashi, M. & Tokita, S., 1995, In: Physica Status Solidi (B): Basic Research. 187, 2, p. 315-325 11 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Growth kinetics 81%
  • kinetics 33%
  • Surface reactions 26%
  • Photons 21%
  8 被引用数 (Scopus)

• Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

  Thomas, R. J., Rockwell, B., Chandrasekhar, H. R., Chandrasekhar, M., Ramdas, A. K., Kobayashi, M. & Gunshor, R. L., 1995, In: Journal of Applied Physics. 78, 11, p. 6569-6573 5 p.

  研究成果: Article › 査読

  • temperature dependence 100%
  • optical measurement 52%
  • temperature 45%
  • thermal expansion 44%
  • elastic properties 39%
  17 被引用数 (Scopus)

• Theoretical design of 460 nm zncdsse laser diodes

  Imajuku, W., Takahashi, M., Kobayash, M. & Yoshikawa, A., 1995 4月, In: Japanese journal of applied physics. 34, 4R, p. 1861-1866 6 p.

  研究成果: Article › 査読

  • Semiconductor lasers 100%
  • Threshold current density 77%
  • threshold currents 62%
  • semiconductor lasers 62%
  • room temperature 44%
  9 被引用数 (Scopus)
• 1994

  A new in-situ optical probing method for the surface reaction in photo-excited heteroepitaxy of compound semiconductors

  Yoshikawa, A., Kobayashi, M. & Tokita, S., 1994 5月 2, In: Applied Surface Science. 79-80, C, p. 416-421 6 p.

  研究成果: Article › 査読

  • Surface reactions 100%
  • Epitaxial growth 98%
  • Surface Reaction 72%
  • surface reactions 72%
  • Semiconductor materials 61%
  4 被引用数 (Scopus)

• Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

  Kobayashi, M., Tosaka, H., Nagatake, T., Yoshida, T. & Yoshikawa, A., 1994 4月 2, In: Journal of Crystal Growth. 138, 1-4, p. 745-749 5 p.

  研究成果: Article › 査読

  • Nitrogen plasma 100%
  • Zinc Selenide 98%
  • nitrogen plasma 68%
  • Helium 61%
  • helium 42%
  3 被引用数 (Scopus)

• In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

  Tokita, S., Kobayashi, M. & Yoshikawa, A., 1994 3月 1, In: Journal of Crystal Growth. 136, 1-4, p. 376-380 5 p.

  研究成果: Article › 査読

  • Metalorganic Molecular Beam Epitaxy 100%
  • Zinc Selenide 89%
  • Molecular beam epitaxy 77%
  • Gas supply 46%
  • molecular beam epitaxy 42%
  6 被引用数 (Scopus)

• Observation of a new in-situ optical monitoring signal with monolayer resolution in metalorganic molecular beam epitaxy and metalorganic vapor phase epitaxy of wide-gap II-VI compounds

  Yoshikawa, A., Kobayashi, M. & Tokita, S., 1994 12月 2, In: Journal of Crystal Growth. 145, 1-4, p. 68-73 6 p.

  研究成果: Article › 査読

  • Metalorganic Molecular Beam Epitaxy 100%
  • Metallorganic vapor phase epitaxy 87%
  • Metallorganic Chemical Vapour Deposition 80%
  • Molecular beam epitaxy 77%
  • Monolayers 65%
  5 被引用数 (Scopus)

• Raman and modulated-reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure

  Thomas, R. J., Boley, M. S., Chandrasekhar, H. R., Chandrasekhar, M., Parks, C., Ramdas, A. K., Han, J., Kobayashi, M. & Gunshor, R. L., 1994, In: Physical Review B. 49, 3, p. 2181-2184 4 p.

  研究成果: Article › 査読

  • reflectance 100%
  • signatures 76%
  • phonons 64%
  • hydrostatics 51%
  • hydrostatic pressure 48%
  20 被引用数 (Scopus)

• Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method

  Yoshikawa, A., Kobayashi, M. & Tokita, S., 1994 12月 2, In: Applied Surface Science. 82-83, C, p. 316-321 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Surface reactions 79%
  • Surface Reaction 57%
  • surface reactions 57%
  • Surface 17%
  11 被引用数 (Scopus)
• 1993

  Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

  Tosaka, H., Nagatake, T., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 12月, In: Japanese journal of applied physics. 32, 12 A, p. L1722-L1724

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Helium 62%
  • Nitrogen 51%
  • Plasmas 51%
  • helium 43%
  1 被引用数 (Scopus)

• Blue and blue/green laser diodes and LED-based display devices

  Xie, W., Grillo, D. C., Kobayashi, M., He, L., Gunshor, R. L., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C. & Otsuka, N., 1993 2月 2, In: Journal of Crystal Growth. 127, 1-4, p. 287-290 4 p.

  研究成果: Article › 査読

  • Semiconductor lasers 100%
  • display devices 89%
  • Light emitting diodes 79%
  • light emitting diodes 64%
  • semiconductor lasers 62%
  8 被引用数 (Scopus)

• Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

  Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M. & Nurmikko, A. V., 1993 5月 1, In: Journal of Electronic Materials. 22, 5, p. 485-488 4 p.

  研究成果: Article › 査読

  • Doping (additives) 100%
  • Diodes 82%
  • Characterization (materials science) 78%
  • diodes 67%
  • Molecular Beam Epitaxy 64%
  10 被引用数 (Scopus)

• Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

  Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M. & Nurmikko, A. V., 1993, In: Applied Physics Letters. 62, 8, p. 840-842 3 p.

  研究成果: Article › 査読

  • nitrogen plasma 100%
  • molecular beam epitaxy 67%
  • electric contacts 23%
  • light emitting diodes 21%
  • semiconductor lasers 20%
  72 被引用数 (Scopus)

• MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

  Grillo, D. C., Xie, W., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1993 5月, In: Journal of Electronic Materials. 22, 5, p. 441-444 4 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Molecular beam epitaxy 99%
  • Semiconductor lasers 79%
  • Light emitting diodes 63%
  • Injection lasers 58%
  7 被引用数 (Scopus)

• Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

  Matsumoto, S., Tosaka, H., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 2月, In: Japanese journal of applied physics. 32, 8 R, p. 731-735 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Photoluminescence 67%
  • Photons 65%
  • Doping (additives) 61%
  • thermal energy 57%

• Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

  Matsumoto, S., Tosaka, H., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 2月, In: Japanese journal of applied physics. 32, 2R, p. 731-735 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Photons 65%
  • Doping (additives) 61%
  • thermal energy 57%
  • Thermal energy 54%
  2 被引用数 (Scopus)

• Planar-Doping of Molecular Beam Epitaxy Grown Znse With Plasma-Excited Nitrogen

  Matsumoto, S., Tosaka, H., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 2月, In: Japanese journal of applied physics. 32, 2 B, p. L229-L232

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Molecular beam epitaxy 86%
  • Hole concentration 70%
  • Doping (additives) 61%
  • Nitrogen 51%
  13 被引用数 (Scopus)

• Pressure tuning of strain in CdTe/InSb epilayer: A photoluminescence and photomodulated reflectivity study

  Boley, M. S., Thomas, R. J., Chandrasekhar, M., Chandrasekhar, H. R., Ramdas, A. K., Kobayashi, M. & Gunshor, R. L., 1993, In: Journal of Applied Physics. 74, 6, p. 4136-4144 9 p.

  研究成果: Article › 査読

  • tuning 100%
  • photoluminescence 93%
  • reflectance 93%
  • anvils 29%
  • hydrostatics 28%
  11 被引用数 (Scopus)

• Pulsed room-temperature operation of a blue-green ZnSe quantum-well diode laser

  Jeon, H., Grillo, D. C., Xie, W., Hagerott, M., Ding, J., Kobayashi, M., Gunshor, R. L. & Nurmikko, A. V., 1993 1月 15, In: Optics Letters. 18, 2, p. 125-127 3 p.

  研究成果: Article › 査読

  • threshold currents 100%
  • quantum wells 75%
  • semiconductor lasers 74%
  • current density 69%
  • room temperature 54%
  11 被引用数 (Scopus)
• 1992

  Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures

  Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1992, In: Applied Physics Letters. 60, 4, p. 463-465 3 p.

  研究成果: Article › 査読

  • electroluminescence 100%
  • buffers 83%
  • quantum wells 76%
  • carrier injection 59%
  • molecular beam epitaxy 42%
  61 被引用数 (Scopus)

• Blue and green diode lasers in ZnSe-based quantum wells

  Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C. & Otsuka, N., 1992, In: Applied Physics Letters. 60, 17, p. 2045-2047 3 p.

  研究成果: Article › 査読

  • quantum wells 100%
  • semiconductor lasers 99%
  • room temperature 72%
  • continuous radiation 59%
  • flat surfaces 57%
  158 被引用数 (Scopus)