小林 正和

研究成果

年別の研究成果 1983 1990 1991 1992 1993 2014 2016 2017 2022

• 2867 被引用数
• 24 h-index
• 161 Article
• 18 Conference article
• 10 Conference contribution
• 7 Paper
• 2 その他
  • 1 Letter
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• 1992

  IIIB-5 Blue and Blue/Green Laser Diodes and LED-Based Display Devices

  Jeon, H., Hagerott, M., Ding, J., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C. & Otsuka, N., 1992 11月, In: IEEE Transactions on Electron Devices. 39, 11, p. 2652-2653 2 p.

  研究成果: Article › 査読

• Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

  Hagerott, M., Jeon, H., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M. & Gunshor, R. L., 1992, In: Applied Physics Letters. 60, 23, p. 2825-2827 3 p.

  研究成果: Article › 査読

  • electrode materials 100%
  • indium oxides 84%
  • tin oxides 82%
  • emitters 71%
  • light emitting diodes 68%
  46 被引用数 (Scopus)

• MBE growth of widegap II-VI injection lasers and LEDs

  Kobayashi, M., Gunshor, R. L., Nurmikko, A. V. & Otsuka, N., 1992 6月 1, In: Optoelectronics Tokyo. 7, 1, p. 1-10 10 p.

  研究成果: Article › 査読

  • Injection lasers 100%
  • Molecular beam epitaxy 85%
  • Light emitting diodes 54%
  • Luminescent devices 34%
  • Zinc Selenide 33%
  5 被引用数 (Scopus)

• Optical properties and device prospects of ZnSe-based quantum structures

  Nurmikko, A. V., Gunshor, R. L. & Kobayashi, M., 1992 2月 2, In: Journal of Crystal Growth. 117, 1-4, p. 432-440 9 p.

  研究成果: Article › 査読

  • Optically pumped lasers 100%
  • Zinc Selenide 78%
  • Excitons 76%
  • Semiconductor quantum wells 68%
  • Optical devices 55%
  20 被引用数 (Scopus)

• Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

  Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C. & Otsuka, N., 1992 12月 1, In: Applied Physics Letters. 60, 16, p. 1999-2001 3 p.

  研究成果: Article › 査読

  • buffers 100%
  • quantum wells 91%
  • diodes 89%
  • nitrogen plasma 74%
  • room temperature 65%
  70 被引用数 (Scopus)

• Vacancy ordering at heterovalent interfaces

  Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1992, In: Surface Science. 267, 1-3, p. 181-186 6 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular Beam Epitaxy 84%
  • Vacancies 79%
  • Surface Chemistry 53%
  • Transmission Electron Microscopy 38%
  13 被引用数 (Scopus)

• ZnSe/Zn_0.8Cd_0.2Se quantum well LEDs and lasers

  Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1992 2月 2, In: Journal of Crystal Growth. 117, 1-4, p. 1079 1 p.

  研究成果: Article › 査読
  3 被引用数 (Scopus)

• ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

  Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Kobayashi, M. & Gunshor, R. L., 1992 12月 1, In: Applied Physics Letters. 60, 7, p. 892-894 3 p.

  研究成果: Article › 査読

  • display devices 100%
  • molecular beam epitaxy 76%
  • light emitting diodes 71%
  • quantum wells 69%
  57 被引用数 (Scopus)
• 1991

  An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces

  Menke, D. R., Qiu, J., Gunshor, R. L., Kobayashi, M., Li, D., Nakamura, Y. & Otsuka, N., 1991 7月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9, 4, p. 2171-2175 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Photoelectron spectroscopy 94%
  • Epilayers 94%
  • x ray spectroscopy 56%
  • X rays 50%
  22 被引用数 (Scopus)

• Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

  Jeon, H., Ding, J., Patterson, W., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M. & Gunshor, R. L., 1991, In: Applied Physics Letters. 59, 27, p. 3619-3621 3 p.

  研究成果: Article › 査読

  • injection lasers 100%
  • quantum wells 60%
  • semiconductor lasers 60%
  • heterojunctions 34%
  • buffers 32%
  520 被引用数 (Scopus)

• Characterization of Ga₂Se₃ at ZnSe/GaAs heterovalent interfaces

  Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Li, D., Nakamura, Y. & Otsuka, N., 1991, In: Applied Physics Letters. 58, 24, p. 2788-2790 3 p.

  研究成果: Article › 査読

  • characterization 100%
  • x ray spectroscopy 45%
  • zinc 39%
  • photoelectron spectroscopy 36%
  • nucleation 33%
  27 被引用数 (Scopus)

• Hot-exciton luminescence in ZnTe/MnTe quantum wells

  Pelekanos, N., Ding, J., Fu, Q., Nurmikko, A. V., Durbin, S. M., Kobayashi, M. & Gunshor, R. L., 1991, In: Physical Review B. 43, 11, p. 9354-9357 4 p.

  研究成果: Article › 査読

  • excitons 100%
  • quantum wells 98%
  • luminescence 96%
  • phonons 43%
  • augmentation 38%
  39 被引用数 (Scopus)

• Nonlinear transmission of MBE-grown ZnSe epilayers in the near-band-edge region

  Presser, N., Kudlek, G., Gutowski, J., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1991, In: Superlattices and Microstructures. 10, 2, p. 247-252 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 94%
  • Molecular beam epitaxy 86%
  • Molecular Beam 66%
  • Exciton 56%

• Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)/(GaAs epilayer)

  Rockwell, B., Chandrasekhar, H. R., Chandrasekhar, M., Ramdas, A. K., Kobayashi, M. & Gunshor, R. L., 1991, In: Physical Review B. 44, 20, p. 11307-11314 8 p.

  研究成果: Article › 査読

  • tuning 100%
  • signatures 61%
  • excitons 44%
  • hydrostatic pressure 19%
  • compressibility 18%
  72 被引用数 (Scopus)

• Properties of II-VI/III-V heterovalent interfaces

  Gunshor, R. L., Kobayashi, M., Otsuka, N. & Nurmikko, A. V., 1991 12月 2, In: Journal of Crystal Growth. 115, 1-4, p. 652-659 8 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 78%
  • Photon Emission 40%
  • Molecular Beam Epitaxy 39%
  • X-Ray Photoelectron Spectroscopy 38%
  9 被引用数 (Scopus)

• Quantum wells with zincblende MnTe barriers

  Han, J., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Pelekanos, N., Hagerott, M., Nurmikko, A. V., Nakamura, Y. & Otsuka, N., 1991 5月 2, In: Journal of Crystal Growth. 111, 1-4, p. 767-771 5 p.

  研究成果: Article › 査読

  • Resonant Tunneling 100%
  • Semiconductor quantum wells 89%
  • zincblende 71%
  • Resonant tunneling 65%
  • Photoluminescence 61%
  8 被引用数 (Scopus)

• Reconstruction at the Ga₂ Se₃/GaAs epitaxial interface

  Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1991 7月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9, 4, p. 2167-2170 4 p.

  研究成果: Article › 査読

  • Vacancies 100%
  • Electron microscopes 69%
  • electron microscopes 58%
  • Diffraction patterns 52%
  • Electron diffraction 48%
  21 被引用数 (Scopus)

• Reconstruction structure at Ga₂Se₃/GaAs epitaxial interface

  Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1991 5月 2, In: Journal of Crystal Growth. 111, 1-4, p. 1038-1042 5 p.

  研究成果: Article › 査読

  • Electron microscopes 100%
  • Diffraction patterns 75%
  • Vacancies 71%
  • Electron diffraction 69%
  • Electron Particle 57%
  5 被引用数 (Scopus)

• ZnSe/GaAs heterovalent interfaces: interface microstructure versus electrical properties

  Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Qian, Q. D., Li, D. & Otsuka, N., 1991 5月 2, In: Journal of Crystal Growth. 111, 1-4, p. 747-751 5 p.

  研究成果: Article › 査読

  • Density of Interface States 100%
  • Zinc Selenide 96%
  • Interface State 82%
  • Molecular Beam Epitaxy 77%
  • Core Level 64%
  9 被引用数 (Scopus)
• 1990

  Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor

  Otsuka, N., Li, D., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1990, In: Materials Transactions, JIM. 31, 7, p. 622-627 6 p.

  研究成果: Article › 査読

  Open Access

  • III-V semiconductors 100%
  • Heterojunctions 78%
  • atomic structure 60%
  • Interface State 46%
  • Semiconductor 45%
  2 被引用数 (Scopus)

• High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers

  Kudlek, G., Presser, N., Gutowski, J., Durbin, S., Menke, D., Kobayashi, M. & Gunshor, R. L., 1990 4月 1, In: Journal of Crystal Growth. 101, 1-4, p. 667-672 6 p.

  研究成果: Article › 査読

  • Exciton Luminescence 100%
  • Zinc Selenide 97%
  • Excitons 95%
  • Epilayers 91%
  • Bound Exciton 90%
  16 被引用数 (Scopus)

• High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

  Presser, N., Kudlek, G., Gutowski, J., Durbin, S. M., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1990, In: Physica Status Solidi (B): Basic Research. 159, 1, p. 443-448 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 94%
  • Spectroscopy 62%
  • Photoluminescence Spectroscopy 30%
  • spectroscopy 29%
  15 被引用数 (Scopus)

• Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

  Qiu, J., Qian, Q. D., Gunshor, R. L., Kobayashi, M., Menke, D. R., Li, D. & Otsuka, N., 1990, In: Applied Physics Letters. 56, 13, p. 1272-1274 3 p.

  研究成果: Article › 査読

  • stoichiometry 100%
  • molecular beams 26%
  • electrical measurement 25%
  • capacitance 20%
  • nucleation 19%
  66 被引用数 (Scopus)

• Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers

  Kudlek, G., Hollandt, J., Presser, N., Gutowski, J., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1990, In: Superlattices and Microstructures. 8, 4, p. 381-385 5 p.

  研究成果: Article › 査読

  • Optical bistability 100%
  • Optical Bistability 94%
  • Zinc Selenide 86%
  • Epilayers 81%
  • Molecular beam epitaxy 74%
  1 被引用数 (Scopus)

• MBE of wide bandgap II-VI compounds

  Gunshor, R. L., Kobayashi, M., Kolodziejski, L. A., Otsuka, N. & Nurmikko, A. V., 1990 1月, In: Journal of Crystal Growth. 99, 1-4, p. 390-398 9 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Heterojunctions 76%
  • zincblende 73%
  • Energy gap 66%
  4 被引用数 (Scopus)

• Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

  Mathine, D. L., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Gonsalves, J., Otsuka, N., Fu, Q., Hagerott, M. & Nurmikko, A. V., 1990 4月 1, In: Surface Science. 228, 1-3, p. 344-346 3 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Molecular Beam Epitaxy 84%
  • Heterojunctions 76%
  • II-VI semiconductors 63%
  1 被引用数 (Scopus)

• Spectroscopy in CdTe/MnTe and ZnTe/MnTe single quantum wells; new binary wide gap II-VI heterostructures

  Pelekanos, N., Fu, Q., Nurmikko, A. V., Durbin, S., Han, J., Sungki, O., Menke, D., Kobayashi, M. & Gunshor, R. L., 1990 4月 1, In: Journal of Crystal Growth. 101, 1-4, p. 628-631 4 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Heterojunctions 83%
  • zincblende 79%
  • Hole (Electron) 76%
  • Spectroscopy 71%
  4 被引用数 (Scopus)

• Spectroscopy of CdTe/MnTe single quantum wells: A strained-layer II-VI heterostructure with strong electronic confinement

  Pelekanos, N., Fu, Q., Ding, J., Wałecki, W., Nurmikko, A. V., Durbin, S. M., Han, J., Kobayashi, M. & Gunshor, R. L., 1990 1月 1, In: Physical Review B. 41, 14, p. 9966-9970 5 p.

  研究成果: Article › 査読

  • quantum wells 100%
  • spectroscopy 67%
  • electronics 67%
  • excitons 51%
  • photoluminescence 45%
  31 被引用数 (Scopus)

• Strong confinement effects in CdTe/MnTe quantum wells: A new strained layer binary II-VI heterostructure

  Fu, Q., Pelekanos, N., Nurmikko, A. V., Durbin, S., Han, J., Sungki, O., Menke, D., Kobayashi, M. & Gunshor, R. L., 1990 4月 2, In: Surface Science. 229, 1-3, p. 148-150 3 p.

  研究成果: Article › 査読

  • Excitons 100%
  • Optical Phonon 89%
  • Phonons 89%
  • Semiconductor quantum wells 88%
  • Heterojunctions 74%

• Structure of the ZnSe/GaAs heteroepitaxial interface

  Li, D., Gonsalves, J. M., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1990 12月 1, In: Applied Physics Letters. 57, 5, p. 449-451 3 p.

  研究成果: Article › 査読

  • sublattices 100%
  • zinc 89%
  • molecular beam epitaxy 85%
  • transmission electron microscopy 66%
  87 被引用数 (Scopus)

• Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

  Kudlek, G., Hollandt, J., Presser, N., Gutowski, J., Durbin, S. M., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1990 12月 1, In: Journal of Applied Physics. 68, 5, p. 2532-2534 3 p.

  研究成果: Article › 査読

  • optical bistability 100%
  • molecular beam epitaxy 68%
  • switches 65%
  • downtime 27%
  • temperature 5%
  7 被引用数 (Scopus)

• Transmission electron microscope study of II-VI/III-V semiconductor interfaces

  Otsuka, N., Li, D., Gonsalves, J. M., Choi, C., Kobayashi, M., Kolodziejski, L. A. & Gunshor, R. L., 1990 4月 1, In: Surface Science. 228, 1-3, p. 96-101 6 p.

  研究成果: Article › 査読

  • II-VI semiconductors 100%
  • Zinc Selenide 83%
  • III-V semiconductors 76%
  • Annealing 46%
  • Electron microscopes 43%
  6 被引用数 (Scopus)

• Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

  Walecki, W., Patterson, W. R., Nurmikko, A. V., Luo, H., Samarth, N., Furdyna, J. K., Kobayashi, M., Durbin, S. & Gunshor, R. L., 1990, In: Applied Physics Letters. 57, 25, p. 2641-2643 3 p.

  研究成果: Article › 査読

  • lithography 100%
  • etching 90%
  • wire 44%
  • damage 42%
  • photoluminescence 41%
  28 被引用数 (Scopus)

• Wide-gap II-VI heterostructures

  Gunshor, R. L., Nurmikko, A. V., Kolodziejski, L. A., Kobayashi, M. & Otsuka, N., 1990 4月 1, In: Journal of Crystal Growth. 101, 1-4, p. 14-22 9 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Molecular beam epitaxy 99%
  • Molecular Beam Epitaxy 91%
  • Heterojunctions 83%
  • zincblende 79%
  12 被引用数 (Scopus)

• ZnTe/MnTe: A new metastable wide gap II-VI heterostructure

  Durbin, S., Kobayashi, M., Fu, Q., Pelekanos, N., Gunshor, R. L. & Nurmikko, A. V., 1990 4月 1, In: Surface Science. 228, 1-3, p. 33-36 4 p.

  研究成果: Article › 査読

  • II-VI semiconductors 100%
  • Excitons 81%
  • Optical Phonon 73%
  • Phonons 72%
  • Semiconductor quantum wells 72%
  4 被引用数 (Scopus)
• 1989

  Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

  Venkatesan, S., Pierret, R. F., Qiu, J., Kobayashi, M., Gunshor, R. L. & Kolodziejski, L. A., 1989 12月 1, In: Journal of Applied Physics. 66, 8, p. 3656-3660 5 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • selenium 44%
  • defects 43%
  • gallium 40%
  • zinc 34%
  20 被引用数 (Scopus)

• II-VI/III-V heterointerfaces: Epilayer-on-epilayer structures

  Qian, Q. D., Qiu, J., Glenn, J. L., O, S., Gunshor, R. L., Kolodziejski, L. A., Kobayashi, M., Otsuka, N., Melloch, M. R., Cooper, J. A., Haggerott, M., Heyen, T. & Nurmikko, A. V., 1989 2月 2, In: Journal of Crystal Growth. 95, 1-4, p. 567-571 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 94%
  • phytotrons 54%
  • Epitaxial growth 52%
  • Heterojunctions 48%
  3 被引用数 (Scopus)

• II-VI/III-V heterostructures: Epilayer-on-epilayer structures

  Gunshor, R. L., Kolodziejski, L. A., Kobayashi, M., Otsuka, N. & Nurmikko, A. V., 1989 3月 15, In: Proceedings of SPIE - The International Society for Optical Engineering. 1037, p. 78-85 8 p.

  研究成果: Article › 査読

  • Heterostructures 100%
  • Epilayers 99%
  • Gallium Arsenide 84%
  • Molecular Beam Epitaxy 83%
  • Heterojunctions 75%

• Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface

  Qian, Q. D., Qiu, J., Melloch, M. R., Cooper, J. A., Kolodziejski, L. A., Kobayashi, M. & Gunshor, R. L., 1989, In: Applied Physics Letters. 54, 14, p. 1359-1361 3 p.

  研究成果: Article › 査読

  • capacitance 100%
  • capacitors 81%
  • electric potential 67%
  • depletion 54%
  • electrical measurement 30%
  38 被引用数 (Scopus)

• Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

  Mathine, D. L., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Pei, Z., Gonsalves, J., Otsuka, N., Fu, Q., Hagerott, M. & Nurmikko, A. V., 1989, In: Applied Physics Letters. 55, 3, p. 268-270 3 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • photoluminescence 82%
  • transmission electron microscopy 77%
  • high energy electrons 58%
  • Raman spectroscopy 50%
  16 被引用数 (Scopus)

• Zinc-blende MnTe: Epilayers and quantum well structures

  Durbin, S. M., Han, J., Sungki, O., Kobayashi, M., Menke, D. R., Gunshor, R. L., Fu, Q., Pelekanos, N., Nurmikko, A. V., Li, D., Gonsalves, J. & Otsuka, N., 1989, In: Applied Physics Letters. 55, 20, p. 2087-2089 3 p.

  研究成果: Article › 査読

  • zinc 100%
  • quantum wells 86%
  • optical transition 58%
  • x ray diffraction 48%
  • molecular beam epitaxy 47%
  108 被引用数 (Scopus)
• 1988

  Electrical properties of p-type and n-type ZnSeZnTe strained-layer

  Kobayashi, M., Dosho, S., Imai, A., Kimura, R., Konagai, M. & Takahashi, K., 1988, In: Superlattices and Microstructures. 4, 2, p. 221-225 5 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 57%
  • Electric properties 56%
  • Electrical Property 44%
  • electrical properties 39%
  1 被引用数 (Scopus)

• Interdiffusion in ZnSe-ZnTe strained-layer superlattices

  Imai, A., Kobayashi, M., Dosho, S., Kongai, M. & Takahashi, K., 1988, In: Journal of Applied Physics. 64, 2, p. 647-650 4 p.

  研究成果: Article › 査読

  • superlattices 100%
  • annealing 47%
  • temperature 23%
  • x ray diffraction 22%
  • molecular beam epitaxy 22%
  4 被引用数 (Scopus)

• ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices

  Konagai, M., Kobayashi, M., Kimura, R. & Takahashi, K., 1988 1月 1, In: Journal of Crystal Growth. 86, 1-4, p. 290-295 6 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 96%
  • Optoelectronic devices 62%
  • Metalorganic Molecular Beam Epitaxy 53%
  • optoelectronic devices 53%
  17 被引用数 (Scopus)
• 1987

  Doping characteristics of znse-znte strained layer superlattice grown by molecular beam epitaxy

  Kimura, R., Dosho, S., Imai, A., Kobayashi, M., Konagai, M. & Takahashi, K., 1987 8月 11, In: Proceedings of SPIE - The International Society for Optical Engineering. 792, p. 112-116 5 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 96%
  • Molecular Beam Epitaxy 94%
  • Molecular beam epitaxy 82%
  • Doping (additives) 59%
  1 被引用数 (Scopus)

• Growth and characterization of ZnSe-ZnTe strained-layer superlattices

  Kobayashi, M., Kimura, R., Konagai, M. & Takahashi, K., 1987 2月 2, In: Journal of Crystal Growth. 81, 1-4, p. 495-500 6 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 96%
  • Photoluminescence 86%
  • Luminescence 78%
  • Transmission electron microscopy 54%
  12 被引用数 (Scopus)

• Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlattices

  Kobayashi, M., Konagai, M., Takahashi, K. & Urabe, K., 1987, In: Journal of Applied Physics. 61, 3, p. 1015-1022 8 p.

  研究成果: Article › 査読

  • superlattices 100%
  • Raman spectra 20%
  • frequency shift 12%
  • crystallinity 11%
  • electron diffraction 11%
  37 被引用数 (Scopus)

• Realization of both p- and n-type conduction for ZnSe-ZnTe strained-layer superlattices

  Kobayashi, M., Dosho, S., Imai, A., Kimura, R., Konagai, M. & Takahashi, K., 1987, In: Applied Physics Letters. 51, 20, p. 1602-1604 3 p.

  研究成果: Article › 査読

  • superlattices 100%
  • conduction 69%
  • modulation 46%
  • gallium 36%
  • modulation doping 26%
  14 被引用数 (Scopus)
• 1986

  Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy

  Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M. & Takahashi, K., 1986 12月 1, In: Applied Physics Letters. 48, 4, p. 296-297 2 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • x ray diffraction 50%
  • photoluminescence 41%
  43 被引用数 (Scopus)

• Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates

  Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M. & Takahashi, K., 1986 12月 1, In: Journal of Applied Physics. 60, 2, p. 773-778 6 p.

  研究成果: Article › 査読

  • superlattices 100%
  • luminescence 80%
  • photoluminescence 73%
  • photoexcitation 57%
  • optoelectronic devices 52%
  49 被引用数 (Scopus)