Masakazu Kobayashi

(211)-oriented domain formation during growth of ZnTe on m-plane sapphire by MBE

Nakasu, T., Kobayashi, M., Togo, H. & Asahi, T., 2014 4月, In: Journal of Electronic Materials. 43, 4, p. 921-925 5 p.

研究成果: Article › 査読

(211) oriented ZnTe growth on m-plane sapphire by MBE

Nakasu, T., Kobayashi, M., Togo, H. & Asahi, T., 2013 11月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 11, p. 1381-1384 4 p.

研究成果: Article › 査読

9 被引用数 (Scopus)

Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

Tosaka, H., Nagatake, T., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 12月, In: Japanese journal of applied physics. 32, 12 A, p. L1722-L1724

研究成果: Article › 査読

1 被引用数 (Scopus)

Al and N co-doped ZnTe Layers Grown by MBE

Ichiba, A. & Kobayashi, M., 2007 4月, In: Journal of Crystal Growth. 301-302, SPEC. ISS., p. 285-288 4 p.

研究成果: Article › 査読

5 被引用数 (Scopus)

A new in-situ optical probing method for the surface reaction in photo-excited heteroepitaxy of compound semiconductors

Yoshikawa, A., Kobayashi, M. & Tokita, S., 1994 5月 2, In: Applied Surface Science. 79-80, C, p. 416-421 6 p.

研究成果: Article › 査読

4 被引用数 (Scopus)

An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces

Menke, D. R., Qiu, J., Gunshor, R. L., Kobayashi, M., Li, D., Nakamura, Y. & Otsuka, N., 1991 7月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9, 4, p. 2171-2175 5 p.

研究成果: Article › 査読

23 被引用数 (Scopus)

Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN

Nagano, H., Qin, Z., Jia, A., Kato, Y., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 265-269 5 p.

研究成果: Article › 査読

11 被引用数 (Scopus)

Atomically-Flat GaAs(001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

Qin, Z., Jia, A., Kobayashi, M. & Yoshikawa, A., 1998 11月, In: Shinku/Journal of the Vacuum Society of Japan. 41, 11, p. 950-954 5 p.

研究成果: Article › 査読

Open Access

Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

Yamaguchi, K., Qin, Z., Nagano, H., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1997 10月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 36, 10 SUPPL. B, p. L1367-L1369

研究成果: Article › 査読

17 被引用数 (Scopus)

Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor

Otsuka, N., Li, D., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1990, In: Materials Transactions, JIM. 31, 7, p. 622-627 6 p.

研究成果: Article › 査読

Open Access

2 被引用数 (Scopus)

Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures

Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1992, In: Applied Physics Letters. 60, 4, p. 463-465 3 p.

研究成果: Article › 査読

61 被引用数 (Scopus)

Blue and blue/green laser diodes and LED-based display devices

Xie, W., Grillo, D. C., Kobayashi, M., He, L., Gunshor, R. L., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C. & Otsuka, N., 1993 2月 2, In: Journal of Crystal Growth. 127, 1-4, p. 287-290 4 p.

研究成果: Article › 査読

8 被引用数 (Scopus)

Blue and green diode lasers in ZnSe-based quantum wells

Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C. & Otsuka, N., 1992, In: Applied Physics Letters. 60, 17, p. 2045-2047 3 p.

研究成果: Article › 査読

159 被引用数 (Scopus)

Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

Jeon, H., Ding, J., Patterson, W., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M. & Gunshor, R. L., 1991, In: Applied Physics Letters. 59, 27, p. 3619-3621 3 p.

研究成果: Article › 査読

527 被引用数 (Scopus)

Bright electroluminescence from CdS quantum dot LED structures

Nakamura, S., Kitamura, K., Umeya, H., Jia, A., Kobayashi, M., Yoshikawa, A., Shimotomai, M., Kato, Y. & Takahashi, K., 1998 12月 10, In: Electronics Letters. 34, 25, p. 2435-2436 2 p.

研究成果: Article › 査読

18 被引用数 (Scopus)

Characterization of Ga₂Se₃ at ZnSe/GaAs heterovalent interfaces

Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Li, D., Nakamura, Y. & Otsuka, N., 1991, In: Applied Physics Letters. 58, 24, p. 2788-2790 3 p.

研究成果: Article › 査読

27 被引用数 (Scopus)

Comparison of Ag(In,Ga)Se₂/Mo and Cu(In,Ga)Se₂/Mo Interfaces in Solar Cells

Zhang, X., Kobayashi, M. & Yamada, A., 2017 5月 17, In: ACS Applied Materials and Interfaces. 9, 19, p. 16215-16220 6 p.

研究成果: Article › 査読

35 被引用数 (Scopus)

Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Sun, W., Taguri, K., Kazami, F., Kobayashi, M. & Asahi, T., 2015 7月 28, In: Journal of Crystal Growth. 425, p. 191-194 4 p.

研究成果: Article › 査読

14 被引用数 (Scopus)

Control of the Nucleation Layers of (110)-Oriented ZnTe Thin Film Growth on r-Plane and S-Plane Sapphire Nanofaceted Substrates

Kobayashi, S. & Kobayashi, M., 2022, (Accepted/In press) In: Journal of Electronic Materials.

研究成果: Article › 査読

1 被引用数 (Scopus)

Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c -plane sapphire substrates by closed space sublimation

Uruno, A., Takeda, Y., Inoue, T. & Kobayashi, M., 2016 7月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 13, 7-9, p. 413-416 4 p.

研究成果: Article › 査読

11 被引用数 (Scopus)

Crystallographic Characterization of AgGaTe₂, AgAlTe₂, and Ag(Ga,Al)Te₂ Grown by Closed-Space Sublimation

Uruno, A., Usui, A., Inoue, T., Takeda, Y. & Kobayashi, M., 2015 9月 26, In: Journal of Electronic Materials. 44, 9, p. 3013-3017 5 p.

研究成果: Article › 査読

7 被引用数 (Scopus)

Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

Nakasu, T., Yamashita, S., Aiba, T., Hattori, S., Sun, W., Taguri, K., Kazami, F. & Kobayashi, M., 2014 10月 28, In: Journal of Applied Physics. 116, 16, 163518.

研究成果: Article › 査読

14 被引用数 (Scopus)

Crystal quality improvement of ZnTe (1 1 0) thin film prepared on sapphire by increasing nuclei density on substrate surface

Kobayashi, S., Sugimoto, K., Tsuboi, K. & Kobayashi, M., 2022 10月 15, In: Journal of Crystal Growth. 596, 126825.

研究成果: Article › 査読

1 被引用数 (Scopus)

Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

Venkatesan, S., Pierret, R. F., Qiu, J., Kobayashi, M., Gunshor, R. L. & Kolodziejski, L. A., 1989 12月 1, In: Journal of Applied Physics. 66, 8, p. 3656-3660 5 p.

研究成果: Article › 査読

20 被引用数 (Scopus)

Defect density reduction in core layer of ZnTe electro-optical waveguide by low lattice mismatched interfaces

Sun, W. C., Nakusu, T., Odaka, K., Kobayashi, M. & Asahi, T., 2017 7月 1, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 4, 04F104.

研究成果: Article › 査読

Deposition of AgGaTe₂ on sapphire substrates by closed space sublimation

Uruno, A., Usui, A. & Kobayashi, M., 2013 11月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 11, p. 1389-1392 4 p.

研究成果: Article › 査読

3 被引用数 (Scopus)

Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates

Jia, A., Furushima, T., Kobayashi, M., Kato, Y., Shimotomai, M., Yoshikawa, A. & Takahashi, K., 2000, In: Journal of Crystal Growth. 214, p. 1085-1090 6 p., 625.

研究成果: Article › 査読

9 被引用数 (Scopus)

Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii-vi compounds

Jia, A. W., Kobayashi, M. & Yoshikawa, A., 1995 3月 1, In: Journal of Electronic Materials. 24, 3, p. 117-121 5 p.

研究成果: Article › 査読

6 被引用数 (Scopus)

Diffusion profiles of Se in bulk ZnTe

Kobayashi, M., Terakado, H., Sawada, R., Arakawa, A. & Sato, K., 2002 8月 29, In: Physica Status Solidi (B) Basic Research. 229, 1, p. 265-268 4 p.

研究成果: Article › 査読

1 被引用数 (Scopus)

Doping characteristics of znse-znte strained layer superlattice grown by molecular beam epitaxy

Kimura, R., Dosho, S., Imai, A., Kobayashi, M., Konagai, M. & Takahashi, K., 1987 8月 11, In: Proceedings of SPIE - The International Society for Optical Engineering. 792, p. 112-116 5 p.

研究成果: Article › 査読

1 被引用数 (Scopus)

Effect of Sodium on the Properties of Ag(In, Ga)Se₂ Thin Films and Solar Cells

Zhang, X. & Kobayashi, M., 2017 9月, In: IEEE Journal of Photovoltaics. 7, 5, p. 1426-1432 7 p., 7997696.

研究成果: Article › 査読

2 被引用数 (Scopus)

Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

Nakasu, T., Sun, W., Kobayashi, M. & Asahi, T., 2017 6月 15, In: Journal of Crystal Growth. 468, p. 635-637 3 p.

研究成果: Article › 査読

7 被引用数 (Scopus)

Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices

Kobayashi, M., Mino, N., Konagai, M. & Takahashi, K., 1985, In: Journal of Applied Physics. 57, 8, p. 2905-2908 4 p.

研究成果: Article › 査読

2 被引用数 (Scopus)

Electrical properties of p-type and n-type ZnSeZnTe strained-layer

Kobayashi, M., Dosho, S., Imai, A., Kimura, R., Konagai, M. & Takahashi, K., 1988, In: Superlattices and Microstructures. 4, 2, p. 221-225 5 p.

研究成果: Article › 査読

1 被引用数 (Scopus)

Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

Mino, N., Kobayashi, M., Konagai, M. & Takahashi, K., 1985, In: Journal of Applied Physics. 58, 2, p. 793-796 4 p.

研究成果: Article › 査読

29 被引用数 (Scopus)

Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Sun, W. C., Taguri, K., Kazami, F., Hashimoto, Y., Ozaki, S., Kobayashi, M. & Asahi, T., 2016 10月 1, In: Journal of Electronic Materials. 45, 10, p. 4742-4746 5 p.

研究成果: Article › 査読

4 被引用数 (Scopus)

Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

Suzuki, Y., Horikoshi, Y., Kobayashi, M. & Okamoto, H., 1984 4月 26, In: Electronics Letters. 20, 9, p. 383-384 2 p.

研究成果: Article › 査読

29 被引用数 (Scopus)

Formation of AgGaTe₂ films from (Ag₂Te+Ga₂Te₃)/Ag₂Te or Ga₂Te₃/Ag₂Te bilayer structures

Uruno, A. & Kobayashi, M., 2018 11月 1, In: AIP Advances. 8, 11, 115023.

研究成果: Article › 査読

Open Access

Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuity

Yoshida, T., Nagatake, T., Kobayashi, M. & Yoshikawa, A., 1996 2月, In: Journal of Electronic Materials. 25, 2, p. 195-199 5 p.

研究成果: Article › 査読

1 被引用数 (Scopus)

Growth and characterization of ZnSe-ZnTe strained-layer superlattices

Kobayashi, M., Kimura, R., Konagai, M. & Takahashi, K., 1987 2月 2, In: Journal of Crystal Growth. 81, 1-4, p. 495-500 6 p.

研究成果: Article › 査読

12 被引用数 (Scopus)

Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M. & Nurmikko, A. V., 1993 5月 1, In: Journal of Electronic Materials. 22, 5, p. 485-488 4 p.

研究成果: Article › 査読

10 被引用数 (Scopus)

Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

Nakasu, T., Sun, W. C., Kobayashi, M. & Asahi, T., 2017 4月 1, In: Journal of Electronic Materials. 46, 4, p. 2248-2253 6 p.

研究成果: Article › 査読

7 被引用数 (Scopus)

Growth and electro-optical characterization of ZnMgTe/ZnTe waveguide by molecular beam epitaxy

Sun, W., Nakasu, T., Taguri, K., Aiba, T., Yamashita, S., Kobayashi, M., Togo, H. & Asahi, T., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1252-1255 4 p.

研究成果: Article › 査読

11 被引用数 (Scopus)

Growth Kinetics in MOMBE‐ALE of ZnSe and CdSe as Determined by a New In‐Situ Optical Probing Method

Yoshikawa, A., Kobayashi, M. & Tokita, S., 1995, In: Physica Status Solidi (B): Basic Research. 187, 2, p. 315-325 11 p.

研究成果: Article › 査読

8 被引用数 (Scopus)

Growth of AgGaTe₂ and AgAlTe₂ layers for novel photovoltaic materials

Uruno, A., Usui, A. & Kobayashi, M., 2014 8月, In: Journal of Electronic Materials. 43, 8, p. 2874-2878 5 p.

研究成果: Article › 査読

6 被引用数 (Scopus)

Growth of AgGaTe₂ layers by a closed-space sublimation method

Uruno, A. & Kobayashi, M., 2013 5月, In: Journal of Electronic Materials. 42, 5, p. 859-862 4 p.

研究成果: Article › 査読

19 被引用数 (Scopus)

Growth of AgGaTe₂ on a- and c-plane sapphire by closed-space sublimation and analysis of the orientation by pole figure measurement

Uruno, A., Usui, A. & Kobayashi, M., 2014 1月, In: Japanese journal of applied physics. 53, 1, 015501.

研究成果: Article › 査読

6 被引用数 (Scopus)

Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy

Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M. & Takahashi, K., 1986 12月 1, In: Applied Physics Letters. 48, 4, p. 296-297 2 p.

研究成果: Article › 査読

44 被引用数 (Scopus)

Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

Kobayashi, M., Kitamura, K., Umeya, H., Jia, A. W., Yoshikawa, A., Shimotomai, M., Kato, Y. & Takahashi, K., 2000 5月, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18, 3, p. 1684-1687 4 p.

研究成果: Article › 査読

18 被引用数 (Scopus)

Growth of CuGaTe₂ based compounds by a closed space sublimation method

Usui, A., Uruno, A. & Kobayashi, M., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1190-1193 4 p.

研究成果: Article › 査読

5 被引用数 (Scopus)

小林 正和

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小林正和