年別の研究成果
年別の研究成果
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X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy
Qin, Z., Kobayashi, M. & Yoshikavva, A., 1999, In: Journal of Materials Science: Materials in Electronics. 10, 3, p. 199-202 4 p.研究成果: Article › 査読
12 被引用数 (Scopus) -
X-ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates
Kobayashi, M., Kumagai, Y., Baba, T. & Imada, S., 2012 8月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 8-9, p. 1748-1751 4 p.研究成果: Article › 査読
17 被引用数 (Scopus) -
Zinc-blende MnTe: Epilayers and quantum well structures
Durbin, S. M., Han, J., Sungki, O., Kobayashi, M., Menke, D. R., Gunshor, R. L., Fu, Q., Pelekanos, N., Nurmikko, A. V., Li, D., Gonsalves, J. & Otsuka, N., 1989, In: Applied Physics Letters. 55, 20, p. 2087-2089 3 p.研究成果: Article › 査読
108 被引用数 (Scopus) -
Znse: Mn dc-electroluminescent cells using di-n-cyclopentadienyl manganese as a new manganese source fabricated by plasma-assisted mocvd
Mino, N., Kobayashmi, M., Konagai, M. & Takahashi, K., 1985 5月, In: Japanese journal of applied physics. 24, 5 A, p. 383-385 3 p.研究成果: Article › 査読
8 被引用数 (Scopus) -
ZnSe/GaAs heterovalent interfaces: interface microstructure versus electrical properties
Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Qian, Q. D., Li, D. & Otsuka, N., 1991 5月 2, In: Journal of Crystal Growth. 111, 1-4, p. 747-751 5 p.研究成果: Article › 査読
9 被引用数 (Scopus) -
ZnSe/Zn0.8Cd0.2Se quantum well LEDs and lasers
Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1992 2月 2, In: Journal of Crystal Growth. 117, 1-4, p. 1079 1 p.研究成果: Article › 査読
3 被引用数 (Scopus) -
ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications
Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Kobayashi, M. & Gunshor, R. L., 1992 12月 1, In: Applied Physics Letters. 60, 7, p. 892-894 3 p.研究成果: Article › 査読
57 被引用数 (Scopus) -
ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy
Kobayashi, M., Mino, N., Konagai, M. & Takahashi, K., 1986 8月 3, In: Surface Science. 174, 1-3, p. 550-555 6 p.研究成果: Article › 査読
16 被引用数 (Scopus) -
ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices
Konagai, M., Kobayashi, M., Kimura, R. & Takahashi, K., 1988 1月 1, In: Journal of Crystal Growth. 86, 1-4, p. 290-295 6 p.研究成果: Article › 査読
17 被引用数 (Scopus) -
ZnTe/MnTe: A new metastable wide gap II-VI heterostructure
Durbin, S., Kobayashi, M., Fu, Q., Pelekanos, N., Gunshor, R. L. & Nurmikko, A. V., 1990 4月 1, In: Surface Science. 228, 1-3, p. 33-36 4 p.研究成果: Article › 査読
4 被引用数 (Scopus) -
ZnTe layers on R - and S -plane sapphire substrates
Nakasu, T., Hattori, S., Kizu, T., Sun, W. C., Kazami, F., Hashimoto, Y., Kobayashi, M. & Asahi, T., 2016 7月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 13, 7-9, p. 435-438 4 p.研究成果: Article › 査読
2 被引用数 (Scopus)