小林 正和

研究成果

年別の研究成果 1983 1990 1991 1992 1993 2014 2016 2017 2022

• 161 Article
• 18 Conference article
• 10 Conference contribution
• 7 Paper
• 2 その他
  • 1 Letter
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• ZnTe layers on R - and S -plane sapphire substrates

  Nakasu, T., Hattori, S., Kizu, T., Sun, W. C., Kazami, F., Hashimoto, Y., Kobayashi, M. & Asahi, T., 2016 7月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 13, 7-9, p. 435-438 4 p.

  研究成果: Article › 査読

  • sapphire 100%
  • crystals 38%
  • poles 34%
  • molecular beam epitaxy 33%
  • excitons 30%
  2 被引用数 (Scopus)

• ZnTe/MnTe: A new metastable wide gap II-VI heterostructure

  Durbin, S., Kobayashi, M., Fu, Q., Pelekanos, N., Gunshor, R. L. & Nurmikko, A. V., 1990 4月 1, In: Surface Science. 228, 1-3, p. 33-36 4 p.

  研究成果: Article › 査読

  • II-VI semiconductors 100%
  • Excitons 81%
  • Optical Phonon 73%
  • Phonons 72%
  • Semiconductor quantum wells 72%
  4 被引用数 (Scopus)

• ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices

  Konagai, M., Kobayashi, M., Kimura, R. & Takahashi, K., 1988 1月 1, In: Journal of Crystal Growth. 86, 1-4, p. 290-295 6 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 96%
  • Optoelectronic devices 62%
  • Metalorganic Molecular Beam Epitaxy 53%
  • optoelectronic devices 53%
  17 被引用数 (Scopus)

• ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy

  Kobayashi, M., Mino, N., Konagai, M. & Takahashi, K., 1986 8月 3, In: Surface Science. 174, 1-3, p. 550-555 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Photoluminescence 90%
  • Molecular beam epitaxy 86%
  • Molecular Beam Epitaxy 79%
  • Lattice mismatch 49%
  16 被引用数 (Scopus)

• ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications

  Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Kobayashi, M. & Gunshor, R. L., 1992 12月 1, In: Applied Physics Letters. 60, 7, p. 892-894 3 p.

  研究成果: Article › 査読

  • display devices 100%
  • molecular beam epitaxy 76%
  • light emitting diodes 71%
  • quantum wells 69%
  57 被引用数 (Scopus)

• ZnSe/Zn_0.8Cd_0.2Se quantum well LEDs and lasers

  Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1992 2月 2, In: Journal of Crystal Growth. 117, 1-4, p. 1079 1 p.

  研究成果: Article › 査読
  3 被引用数 (Scopus)

• ZnSe/GaAs heterovalent interfaces: interface microstructure versus electrical properties

  Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Qian, Q. D., Li, D. & Otsuka, N., 1991 5月 2, In: Journal of Crystal Growth. 111, 1-4, p. 747-751 5 p.

  研究成果: Article › 査読

  • Density of Interface States 100%
  • Zinc Selenide 96%
  • Interface State 82%
  • Molecular Beam Epitaxy 77%
  • Core Level 64%
  9 被引用数 (Scopus)

• Znse: Mn dc-electroluminescent cells using di-n-cyclopentadienyl manganese as a new manganese source fabricated by plasma-assisted mocvd

  Mino, N., Kobayashmi, M., Konagai, M. & Takahashi, K., 1985 5月, In: Japanese journal of applied physics. 24, 5 A, p. 383-385 3 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Manganese 65%
  • manganese 55%
  • Plasmas 51%
  • Organometallics 42%
  8 被引用数 (Scopus)

• Zinc-blende MnTe: Epilayers and quantum well structures

  Durbin, S. M., Han, J., Sungki, O., Kobayashi, M., Menke, D. R., Gunshor, R. L., Fu, Q., Pelekanos, N., Nurmikko, A. V., Li, D., Gonsalves, J. & Otsuka, N., 1989, In: Applied Physics Letters. 55, 20, p. 2087-2089 3 p.

  研究成果: Article › 査読

  • zinc 100%
  • quantum wells 86%
  • optical transition 58%
  • x ray diffraction 48%
  • molecular beam epitaxy 47%
  109 被引用数 (Scopus)

• X-ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

  Kobayashi, M., Kumagai, Y., Baba, T. & Imada, S., 2012 8月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 8-9, p. 1748-1751 4 p.

  研究成果: Article › 査読

  • poles 100%
  • x rays 51%
  • electro-optical effect 23%
  • costs 12%
  • symmetry 9%
  17 被引用数 (Scopus)

• X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

  Qin, Z., Kobayashi, M. & Yoshikavva, A., 1999, In: Journal of Materials Science: Materials in Electronics. 10, 3, p. 199-202 4 p.

  研究成果: Article › 査読

  • gallium arsenide 100%
  • Molecular beam epitaxy 91%
  • Epitaxial films 89%
  • Molecular Beam Epitaxy 84%
  • Epitaxial Film 83%
  12 被引用数 (Scopus)

• Wide-gap II-VI heterostructures

  Gunshor, R. L., Nurmikko, A. V., Kolodziejski, L. A., Kobayashi, M. & Otsuka, N., 1990 4月 1, In: Journal of Crystal Growth. 101, 1-4, p. 14-22 9 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Molecular beam epitaxy 99%
  • Molecular Beam Epitaxy 91%
  • Heterojunctions 83%
  • zincblende 79%
  12 被引用数 (Scopus)

• Vacancy ordering at heterovalent interfaces

  Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1992, In: Surface Science. 267, 1-3, p. 181-186 6 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular Beam Epitaxy 84%
  • Vacancies 79%
  • Surface Chemistry 53%
  • Transmission Electron Microscopy 38%
  13 被引用数 (Scopus)

• Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below

  Walecki, W., Patterson, W. R., Nurmikko, A. V., Luo, H., Samarth, N., Furdyna, J. K., Kobayashi, M., Durbin, S. & Gunshor, R. L., 1990, In: Applied Physics Letters. 57, 25, p. 2641-2643 3 p.

  研究成果: Article › 査読

  • lithography 100%
  • etching 90%
  • wire 44%
  • damage 42%
  • photoluminescence 41%
  28 被引用数 (Scopus)

• Two-step-index ZnMgTe/ZnTe Waveguide Structures with Improved Crystal Quality

  Sun, W. C., Kazami, F., Wang, J., Nakasu, T., Hattori, S., Kizu, T., Hashimoto, Y., Kobayashi, M. & Asahi, T., 2016, In: MRS Advances. 1, 23, p. 1721-1727 7 p.

  研究成果: Article › 査読

  • Cladding 100%
  • Waveguides 78%
  • Crystals 75%
  • Lattice mismatch 68%
  • waveguides 51%

• Transmission electron microscope study of II-VI/III-V semiconductor interfaces

  Otsuka, N., Li, D., Gonsalves, J. M., Choi, C., Kobayashi, M., Kolodziejski, L. A. & Gunshor, R. L., 1990 4月 1, In: Surface Science. 228, 1-3, p. 96-101 6 p.

  研究成果: Article › 査読

  • II-VI semiconductors 100%
  • Zinc Selenide 83%
  • III-V semiconductors 76%
  • Annealing 46%
  • Electron microscopes 43%
  6 被引用数 (Scopus)

• Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

  Kudlek, G., Hollandt, J., Presser, N., Gutowski, J., Durbin, S. M., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1990 12月 1, In: Journal of Applied Physics. 68, 5, p. 2532-2534 3 p.

  研究成果: Article › 査読

  • optical bistability 100%
  • molecular beam epitaxy 68%
  • switches 65%
  • downtime 27%
  • temperature 5%
  7 被引用数 (Scopus)

• Theoretical design of 460 nm zncdsse laser diodes

  Imajuku, W., Takahashi, M., Kobayash, M. & Yoshikawa, A., 1995 4月, In: Japanese journal of applied physics. 34, 4R, p. 1861-1866 6 p.

  研究成果: Article › 査読

  • Semiconductor lasers 100%
  • Threshold current density 77%
  • threshold currents 62%
  • semiconductor lasers 62%
  • room temperature 44%
  9 被引用数 (Scopus)

• The Optical Property Characterization of AgGaTe₂ Prepared by the Two-Step Closed Space Sublimation

  Uruno, A. & Kobayashi, M., 2019 1月 9, In: Physica Status Solidi (A) Applications and Materials Science. 216, 1, 1800592.

  研究成果: Article › 査読

  • Excitons 100%
  • Photoluminescence 92%
  • Sublimation 80%
  • Optical properties 70%
  • sublimation 62%
  1 被引用数 (Scopus)

• The Growth of CuGaTe₂ Thin Films by Two-Step Closed Space Sublimation

  Uruno, A. & Kobayashi, M., 2019 8月, In: Physica Status Solidi (A) Applications and Materials Science. 216, 15, 1800883.

  研究成果: Article › 査読

  • Sublimation 100%
  • sublimation 78%
  • Thin films 66%
  • Quartz 62%
  • Surface Free Energy 54%
  2 被引用数 (Scopus)

• The growth of AgGaTe₂ layers on glass substrates with Ag₂Te buffer layer by closed space sublimation method

  Uruno, A., Usui, A., Takeda, Y., Inoue, T. & Kobayashi, M., 2015 6月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 6, p. 508-511 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • buffers 76%
  • glass 52%
  • insertion 11%
  • x ray diffraction 9%
  3 被引用数 (Scopus)

• The effect of gas injection on a thermal argon plasma flow in a water-cooled tube

  Kobayashi, M., Honda, T. & Kanzawa, A., 1985 3月 1, In: Plasma Chemistry and Plasma Processing. 5, 1, p. 39-54 16 p.

  研究成果: Article › 査読

  • Plasma flow 100%
  • gas injection 82%
  • thermal plasmas 74%
  • argon plasma 72%
  • Argon 70%
  5 被引用数 (Scopus)

• The Crystal Quality and Surface Wettability of Various Tellurium-Based Chalcopyrite Layers Grown by the Closed Space Sublimation

  Uruno, A., Sakurakawa, Y. & Kobayashi, M., 2018 10月 1, In: Journal of Electronic Materials. 47, 10, p. 5730-5734 5 p.

  研究成果: Article › 査読

  • Tellurium 100%
  • Sublimation Method 93%
  • Sublimation 85%
  • Chalcopyrite 75%
  • tellurium 70%
  1 被引用数 (Scopus)

• Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

  Thomas, R. J., Rockwell, B., Chandrasekhar, H. R., Chandrasekhar, M., Ramdas, A. K., Kobayashi, M. & Gunshor, R. L., 1995, In: Journal of Applied Physics. 78, 11, p. 6569-6573 5 p.

  研究成果: Article › 査読

  • temperature dependence 100%
  • optical measurement 52%
  • temperature 45%
  • thermal expansion 44%
  • elastic properties 39%
  17 被引用数 (Scopus)

• Synthesis of ternary compound sulfide nanoparticles

  Hamaguchi, S., Yamamoto, T. & Kobayashi, M., 2009 4月, In: Japanese journal of applied physics. 48, 4 PART 2, 04C131.

  研究成果: Article › 査読

  • Sulfides 100%
  • sulfides 92%
  • Nanoparticles 85%
  • synthesis 62%
  • nanoparticles 58%
  4 被引用数 (Scopus)

• Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

  Nakasu, T., Kizu, T., Yamashita, S., Aiba, T., Hattori, S., Sun, W. C., Taguri, K., Kazami, F., Hashimoto, Y., Ozaki, S., Kobayashi, M. & Asahi, T., 2016 4月 1, In: Journal of Electronic Materials. 45, 4, p. 2127-2132 6 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Sapphire 78%
  • Crystallinity 71%
  • crystallinity 52%
  • sapphire 49%
  8 被引用数 (Scopus)

• Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method

  Yoshikawa, A., Kobayashi, M. & Tokita, S., 1994 12月 2, In: Applied Surface Science. 82-83, C, p. 316-321 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Surface reactions 79%
  • Surface Reaction 57%
  • surface reactions 57%
  • Surface 17%
  11 被引用数 (Scopus)

• Surface modification of a-plane sapphire substrates and its effect on crystal orientation of ZnTe layer

  Nakasu, T., Sun, W. C. & Kobayashi, M., 2017 1月, In: Japanese journal of applied physics. 56, 1, 015505.

  研究成果: Article › 査読

  • Crystal orientation 100%
  • Sapphire 96%
  • Surface treatment 75%
  • sapphire 61%
  • Substrates 50%
  2 被引用数 (Scopus)

• Surface and microstructural characterization of homoepitaxial silicon grown by pulsed laser deposition

  Pelt, J. S., Magaña, R., Ramsey, M. E., Poindexter, E., Atwell, S., Zheng, J. P., Durbin, S. M. & Kobayashi, M., 2000, In: Materials Research Society Symposium - Proceedings. 616, p. 75-80 6 p.

  研究成果: Article › 査読

  • Pulsed laser deposition 100%
  • Pulsed Laser Deposition 85%
  • pulsed laser deposition 61%
  • Characterization (materials science) 56%
  • Silicon 50%

• Study on Growth Process of Ag(In, Ga)Se2 Films by a Three-Stage Co-Evaporation Method Using Molecular Beam Epitaxy Apparatus

  Zhang, X. & Kobayashi, M., 2017 4月, In: IEEE Photonics Journal. 9, 2, 7858727.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Evaporation 64%
  • molecular beam epitaxy 54%
  • evaporation 49%
  • Silver 49%
  3 被引用数 (Scopus)

• Structure of the ZnSe/GaAs heteroepitaxial interface

  Li, D., Gonsalves, J. M., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1990 12月 1, In: Applied Physics Letters. 57, 5, p. 449-451 3 p.

  研究成果: Article › 査読

  • sublattices 100%
  • zinc 89%
  • molecular beam epitaxy 85%
  • transmission electron microscopy 66%
  87 被引用数 (Scopus)

• Structural characterization of AgGaTe₂ layers grown on a- and c-sapphire substrates by a closed space sublimation method

  Uruno, A., Usui, A. & Kobayashi, M., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1186-1189 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • characterization 50%
  • poles 39%
  • diffraction 12%
  3 被引用数 (Scopus)

• Structural Change in Ag₂Te Buffer Layer During Two-Step Closed Space Sublimation of AgGaTe₂

  Yu, Y. & Kobayashi, M., 2020 12月, In: Journal of Electronic Materials. 49, 12, p. 7541-7546 6 p.

  研究成果: Article › 査読

  • Buffer layers 100%
  • Sublimation 99%
  • sublimation 77%
  • Annealing 69%
  • buffers 59%

• Structural and optical properties of AgAlTe₂ layers grown on sapphire substrates by closed space sublimation method

  Uruno, A., Usui, A. & Kobayashi, M., 2014 11月 14, In: Journal of Applied Physics. 116, 18, 183504.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • optical properties 58%
  • diffraction 13%
  • x rays 11%
  9 被引用数 (Scopus)

• Structural and electric properties of AgGaTe₂ layers prepared using mixed source of Ag₂Te and Ga₂Te₃

  Uruno, A. & Kobayashi, M., 2017 1月 1, In: Physica Status Solidi (A) Applications and Materials Science. 214, 1, 1600284.

  研究成果: Article › 査読

  • Molar ratio 100%
  • Structural properties 90%
  • Electric properties 88%
  • Buffer layers 79%
  • Electrical Property 70%
  6 被引用数 (Scopus)

• Strong confinement effects in CdTe/MnTe quantum wells: A new strained layer binary II-VI heterostructure

  Fu, Q., Pelekanos, N., Nurmikko, A. V., Durbin, S., Han, J., Sungki, O., Menke, D., Kobayashi, M. & Gunshor, R. L., 1990 4月 2, In: Surface Science. 229, 1-3, p. 148-150 3 p.

  研究成果: Article › 査読

  • Excitons 100%
  • Optical Phonon 89%
  • Phonons 89%
  • Semiconductor quantum wells 88%
  • Heterojunctions 74%

• Static pressure and heat flux measurements of a thermal argon plasma flow in a water-cooled tube

  Kobayashi, M., Honda, T. & Kanzawa, A., 1984 3月 1, In: Plasma Chemistry and Plasma Processing. 4, 1, p. 43-57 15 p.

  研究成果: Article › 査読

  • Plasma flow 100%
  • static pressure 74%
  • thermal plasmas 74%
  • argon plasma 72%
  • Argon 70%
  5 被引用数 (Scopus)

• Spectroscopy of self-assembled Cds quantum dots in ZnSe

  Zhou, H., Nurmikko, A. V., Nakamura, S., Kitamura, K., Umeya, H., Jia, A., Kobayashi, M., Yoshikawa, A., Shimotomai, M. & Kato, Y., 2000 10月, In: Journal of Applied Physics. 88, 8, p. 4725-4728 4 p.

  研究成果: Article › 査読

  • excitons 100%
  • quantum dots 98%
  • spectroscopy 66%
  • excitation 61%
  1 被引用数 (Scopus)

• Spectroscopy of CdTe/MnTe single quantum wells: A strained-layer II-VI heterostructure with strong electronic confinement

  Pelekanos, N., Fu, Q., Ding, J., Wałecki, W., Nurmikko, A. V., Durbin, S. M., Han, J., Kobayashi, M. & Gunshor, R. L., 1990 1月 1, In: Physical Review B. 41, 14, p. 9966-9970 5 p.

  研究成果: Article › 査読

  • quantum wells 100%
  • spectroscopy 67%
  • electronics 67%
  • excitons 51%
  • photoluminescence 45%
  31 被引用数 (Scopus)

• Spectroscopy in CdTe/MnTe and ZnTe/MnTe single quantum wells; new binary wide gap II-VI heterostructures

  Pelekanos, N., Fu, Q., Nurmikko, A. V., Durbin, S., Han, J., Sungki, O., Menke, D., Kobayashi, M. & Gunshor, R. L., 1990 4月 1, In: Journal of Crystal Growth. 101, 1-4, p. 628-631 4 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Heterojunctions 83%
  • zincblende 79%
  • Hole (Electron) 76%
  • Spectroscopy 71%
  4 被引用数 (Scopus)

• Spectroscopic studies of autofluorescence substances existing in human tissue: Influences of lactic acid and porphyrins

  Ueda, Y. & Kobayashi, M., 2004 7月 10, In: Applied Optics. 43, 20, p. 3993-3998 6 p.

  研究成果: Article › 査読

  • Porphyrins 100%
  • Fluorophores 95%
  • lactic acid 80%
  • Lactic acid 77%
  • porphyrins 71%
  9 被引用数 (Scopus)

• Spectroscopic imaging and the characterization of the autofluorescence properties of human bronchus tissues using UV laser diodes

  Kobayashi, M., Sawada, R. & Ueda, Y., 2003 3月, In: IEEE Journal on Selected Topics in Quantum Electronics. 9, 2, p. 142-147 6 p.

  研究成果: Article › 査読

  • bronchi 100%
  • Semiconductor lasers 75%
  • ultraviolet lasers 64%
  • Wavelength 53%
  • Tissue 51%
  2 被引用数 (Scopus)

• Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

  Taniyasu, Y., Ito, R., Shimoyama, N., Kurihara, M., Jia, A., Kato, Y., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 305-309 5 p.

  研究成果: Article › 査読

  • Spectroscopic ellipsometry 100%
  • Metallorganic vapor phase epitaxy 96%
  • Buffer layers 78%
  • monomethylhydrazines 66%
  • Ellipsometry 60%
  11 被引用数 (Scopus)

• Spectroscopic analysis of the autofluorescence from human bronchus using an ultraviolet laser diode

  Kobayashi, M., Shibuya, K., Hoshino, H. & Fujisawa, T., 2002 10月, In: Journal of Biomedical Optics. 7, 4, p. 603-608 6 p.

  研究成果: Article › 査読

  • Ultraviolet lasers 100%
  • Elastin 95%
  • bronchi 92%
  • Spectroscopic analysis 90%
  • elastin 70%
  18 被引用数 (Scopus)

• Selective growth of ZnTe on sapphire substrates using a SiO₂ mask

  Nakasu, T., Hattori, S., Sun, W. C. & Kobayashi, M., 2016 11月 1, In: Physica Status Solidi (B) Basic Research. 253, 11, p. 2265-2269 5 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • Masks 71%
  • masks 63%
  • sapphire 63%
  • Terahertz wave detectors 58%

• Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures

  Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C. & Otsuka, N., 1992 12月 1, In: Applied Physics Letters. 60, 16, p. 1999-2001 3 p.

  研究成果: Article › 査読

  • buffers 100%
  • quantum wells 91%
  • diodes 89%
  • nitrogen plasma 74%
  • room temperature 65%
  70 被引用数 (Scopus)

• Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga₂Se₃ interfacial layer

  Yoshida, T., Nagatake, T., Kobayashi, M. & Yoshikawa, A., 1996 2月, In: Journal of Crystal Growth. 159, 1-4, p. 750-753 4 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Valence bands 99%
  • Valence Band 61%
  • discontinuity 49%
  • valence 40%
  2 被引用数 (Scopus)

• Reconstruction structure at Ga₂Se₃/GaAs epitaxial interface

  Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1991 5月 2, In: Journal of Crystal Growth. 111, 1-4, p. 1038-1042 5 p.

  研究成果: Article › 査読

  • Electron microscopes 100%
  • Diffraction patterns 75%
  • Vacancies 71%
  • Electron diffraction 69%
  • Electron Particle 57%
  5 被引用数 (Scopus)

• Reconstruction at the Ga₂ Se₃/GaAs epitaxial interface

  Li, D., Nakamura, Y., Otsuka, N., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1991 7月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9, 4, p. 2167-2170 4 p.

  研究成果: Article › 査読

  • Vacancies 100%
  • Electron microscopes 69%
  • electron microscopes 58%
  • Diffraction patterns 52%
  • Electron diffraction 48%
  21 被引用数 (Scopus)

• Real time monitoring of growth and p-type doping processes in MOVPE of ZnSe

  Miyachi, M., Ohira, Y., Komatsu, S., Kurihara, M., Shimoyama, N., Kobayashi, M., Kato, Y. & Yoshikawa, A., 1996 2月, In: Journal of Crystal Growth. 159, 1-4, p. 261-265 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Metallorganic vapor phase epitaxy 97%
  • Doping (additives) 61%
  • Monitoring 31%
  • Doping Material 24%
  2 被引用数 (Scopus)