小林 正和

研究成果

年別の研究成果 1983 1990 1991 1992 1993 2014 2016 2017 2022

• 161 Article
• 18 Conference article
• 10 Conference contribution
• 7 Paper
• 2 その他
  • 1 Letter
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• Hot-exciton luminescence in ZnTe/MnTe quantum wells

  Pelekanos, N., Ding, J., Fu, Q., Nurmikko, A. V., Durbin, S. M., Kobayashi, M. & Gunshor, R. L., 1991, In: Physical Review B. 43, 11, p. 9354-9357 4 p.

  研究成果: Article › 査読

  • excitons 100%
  • quantum wells 98%
  • luminescence 96%
  • phonons 43%
  • augmentation 38%
  39 被引用数 (Scopus)

• High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

  Presser, N., Kudlek, G., Gutowski, J., Durbin, S. M., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1990, In: Physica Status Solidi (B): Basic Research. 159, 1, p. 443-448 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 94%
  • Spectroscopy 62%
  • Photoluminescence Spectroscopy 30%
  • spectroscopy 29%
  15 被引用数 (Scopus)

• High-temperature fabrication of Ag(In,Ga)Se₂ thin films for applications in solar cells

  Zhang, X., Yamada, A. & Kobayashi, M., 2017 10月 1, In: Physica Status Solidi (A) Applications and Materials Science. 214, 10, 1700042.

  研究成果: Article › 査読

  • Solar cells 100%
  • Thin films 89%
  • Solar Cell 81%
  • Annealing 74%
  • solar cells 69%
  4 被引用数 (Scopus)

• High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy

  Qin, Z. X., Nagano, H., Sugure, Y., Jia, A. W., Kobayashi, M., Kato, Y., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 425-429 5 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • X ray diffraction analysis 81%
  • X rays 58%
  • molecular beam epitaxy 54%
  16 被引用数 (Scopus)

• High-Quality AgGaTe₂ Layers on Si Substrates with Ag₂Te Buffer Layers

  Uruno, A. & Kobayashi, M., 2016 9月 1, In: Journal of Electronic Materials. 45, 9, p. 4692-4696 5 p.

  研究成果: Article › 査読

  • Buffer layers 100%
  • Etching 63%
  • Solar Cell 60%
  • buffers 59%
  • Sublimation Method 54%
  7 被引用数 (Scopus)

• High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers

  Kudlek, G., Presser, N., Gutowski, J., Durbin, S., Menke, D., Kobayashi, M. & Gunshor, R. L., 1990 4月 1, In: Journal of Crystal Growth. 101, 1-4, p. 667-672 6 p.

  研究成果: Article › 査読

  • Exciton Luminescence 100%
  • Zinc Selenide 97%
  • Excitons 95%
  • Epilayers 91%
  • Bound Exciton 90%
  16 被引用数 (Scopus)

• Hexagon formation in photorefractive crystals as mirrorless coherent oscillation

  Uesu, Y., Ueno, A., Kobayashi, M. & Odoulov, S., 1998 7月, In: Journal of the Optical Society of America B: Optical Physics. 15, 7, p. 2065-2069 5 p.

  研究成果: Article › 査読

  • Photorefractive Crystal 100%
  • hexagons 61%
  • Hexagon 52%
  • Four-wave Mixing 46%
  • Oscillation 38%
  2 被引用数 (Scopus)

• Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

  Kobayashi, M., Tosaka, H., Nagatake, T., Yoshida, T. & Yoshikawa, A., 1994 4月 2, In: Journal of Crystal Growth. 138, 1-4, p. 745-749 5 p.

  研究成果: Article › 査読

  • Nitrogen plasma 100%
  • Zinc Selenide 98%
  • nitrogen plasma 68%
  • Helium 61%
  • helium 42%
  3 被引用数 (Scopus)

• Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

  Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M. & Nurmikko, A. V., 1993, In: Applied Physics Letters. 62, 8, p. 840-842 3 p.

  研究成果: Article › 査読

  • nitrogen plasma 100%
  • molecular beam epitaxy 67%
  • electric contacts 23%
  • light emitting diodes 21%
  • semiconductor lasers 20%
  72 被引用数 (Scopus)

• Growth of ZnTe epilayers on r- and n-plane sapphire substrates

  Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Sun, W. C., Taguri, K., Kazami, F. & Kobayashi, M., 2015 7月 1, In: Japanese journal of applied physics. 54, 7, 075501.

  研究成果: Article › 査読

  • Epilayers 100%
  • Sapphire 78%
  • sapphire 49%
  • Substrates 41%
  • Molecular beam epitaxy 15%
  10 被引用数 (Scopus)

• Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (0 0 1) substrates by molecular beam epitaxy

  Kumagai, Y., Imada, S., Baba, T. & Kobayashi, M., 2011 5月 15, In: Journal of Crystal Growth. 323, 1, p. 132-134 3 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Waveguides 65%
  • Crystals 64%
  • Lattice mismatch 57%
  20 被引用数 (Scopus)

• Growth of ZnMgTe/ZnTe waveguide structures and analysis of the light polarization with the electric field

  Kumagai, Y. & Kobayashi, M., 2012 2月, In: Japanese journal of applied physics. 51, 2 PART 2, 02BH06.

  研究成果: Article › 査読

  • Light polarization 100%
  • Waveguides 68%
  • Electric fields 61%
  • Molecular beam epitaxy 52%
  • electro-optical effect 49%
  19 被引用数 (Scopus)

• Growth of CuGaTe₂ based compounds by a closed space sublimation method

  Usui, A., Uruno, A. & Kobayashi, M., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1190-1193 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • diffraction 24%
  • x rays 20%
  • stoichiometry 14%
  • crystallinity 13%
  5 被引用数 (Scopus)

• Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

  Kobayashi, M., Kitamura, K., Umeya, H., Jia, A. W., Yoshikawa, A., Shimotomai, M., Kato, Y. & Takahashi, K., 2000 5月, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18, 3, p. 1684-1687 4 p.

  研究成果: Article › 査読

  • Photoluminescence 100%
  • Molecular beam epitaxy 95%
  • Reflection high energy electron diffraction 63%
  • Wetting 62%
  • Light emitting diodes 61%
  17 被引用数 (Scopus)

• Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy

  Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M. & Takahashi, K., 1986 12月 1, In: Applied Physics Letters. 48, 4, p. 296-297 2 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • x ray diffraction 50%
  • photoluminescence 41%
  43 被引用数 (Scopus)

• Growth of AgGaTe₂ on a- and c-plane sapphire by closed-space sublimation and analysis of the orientation by pole figure measurement

  Uruno, A., Usui, A. & Kobayashi, M., 2014 1月 1, In: Japanese journal of applied physics. 53, 1, 015501.

  研究成果: Article › 査読

  • Sublimation 100%
  • Sapphire 94%
  • sublimation 78%
  • poles 62%
  • Poles 61%
  6 被引用数 (Scopus)

• Growth of AgGaTe₂ layers by a closed-space sublimation method

  Uruno, A. & Kobayashi, M., 2013 5月, In: Journal of Electronic Materials. 42, 5, p. 859-862 4 p.

  研究成果: Article › 査読

  • Sublimation Method 100%
  • Sublimation 91%
  • sublimation 71%
  • Diffraction 34%
  • Liquid Film 31%
  19 被引用数 (Scopus)

• Growth of AgGaTe₂ and AgAlTe₂ layers for novel photovoltaic materials

  Uruno, A., Usui, A. & Kobayashi, M., 2014 8月, In: Journal of Electronic Materials. 43, 8, p. 2874-2878 5 p.

  研究成果: Article › 査読

  • Diffraction 100%
  • X rays 63%
  • Sapphire 61%
  • Sublimation 53%
  • Solar Cell 40%
  6 被引用数 (Scopus)

• Growth Kinetics in MOMBE‐ALE of ZnSe and CdSe as Determined by a New In‐Situ Optical Probing Method

  Yoshikawa, A., Kobayashi, M. & Tokita, S., 1995, In: Physica Status Solidi (B): Basic Research. 187, 2, p. 315-325 11 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Growth kinetics 81%
  • kinetics 33%
  • Surface reactions 26%
  • Photons 21%
  8 被引用数 (Scopus)

• Growth and electro-optical characterization of ZnMgTe/ZnTe waveguide by molecular beam epitaxy

  Sun, W., Nakasu, T., Taguri, K., Aiba, T., Yamashita, S., Kobayashi, M., Togo, H. & Asahi, T., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1252-1255 4 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • waveguides 78%
  • characterization 65%
  • thin films 15%
  • crystals 14%
  11 被引用数 (Scopus)

• Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

  Nakasu, T., Sun, W. C., Kobayashi, M. & Asahi, T., 2017 4月 1, In: Journal of Electronic Materials. 46, 4, p. 2248-2253 6 p.

  研究成果: Article › 査読

  • Crystal orientation 100%
  • Sapphire 96%
  • Crystal Orientation 91%
  • sapphire 61%
  • Substrates 50%
  6 被引用数 (Scopus)

• Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

  Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M. & Nurmikko, A. V., 1993 5月 1, In: Journal of Electronic Materials. 22, 5, p. 485-488 4 p.

  研究成果: Article › 査読

  • Doping (additives) 100%
  • Diodes 82%
  • Characterization (materials science) 78%
  • diodes 67%
  • Molecular Beam Epitaxy 64%
  10 被引用数 (Scopus)

• Growth and characterization of ZnSe-ZnTe strained-layer superlattices

  Kobayashi, M., Kimura, R., Konagai, M. & Takahashi, K., 1987 2月 2, In: Journal of Crystal Growth. 81, 1-4, p. 495-500 6 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 96%
  • Photoluminescence 86%
  • Luminescence 78%
  • Transmission electron microscopy 54%
  12 被引用数 (Scopus)

• Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuity

  Yoshida, T., Nagatake, T., Kobayashi, M. & Yoshikawa, A., 1996 2月, In: Journal of Electronic Materials. 25, 2, p. 195-199 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Band structure 77%
  • Heterojunctions 72%
  • Valence Band 61%
  • Electronic Band Structure 55%
  1 被引用数 (Scopus)

• Formation of AgGaTe₂ films from (Ag₂Te+Ga₂Te₃)/Ag₂Te or Ga₂Te₃/Ag₂Te bilayer structures

  Uruno, A. & Kobayashi, M., 2018 11月 1, In: AIP Advances. 8, 11, 115023.

  研究成果: Article › 査読

  • sublimation 100%
  • preparation 66%
  • boats 60%
  • controllability 53%
  • vapors 34%

• Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

  Suzuki, Y., Horikoshi, Y., Kobayashi, M. & Okamoto, H., 1984 4月 26, In: Electronics Letters. 20, 9, p. 383-384 2 p.

  研究成果: Article › 査読

  • Quantum well lasers 100%
  • Semiconductor quantum wells 78%
  • Heterojunctions 65%
  • Alloying 58%
  • Laser windows 52%
  29 被引用数 (Scopus)

• Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

  Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Sun, W. C., Taguri, K., Kazami, F., Hashimoto, Y., Ozaki, S., Kobayashi, M. & Asahi, T., 2016 10月 1, In: Journal of Electronic Materials. 45, 10, p. 4742-4746 5 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • zinc tellurides 82%
  • Sapphire 78%
  • Zinc 63%
  • sapphire 49%
  3 被引用数 (Scopus)

• Epitaxial growth of high quality ZnSe on Si substrates by molecular beam epitaxy and application to dc electroluminescent cells

  Mino, N., Kobayashi, M., Konagai, M. & Takahashi, K., 1985, In: Journal of Applied Physics. 58, 2, p. 793-796 4 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • cells 63%
  • electron mobility 60%
  • high energy electrons 58%
  • Hall effect 53%
  29 被引用数 (Scopus)

• Electrical properties of p-type and n-type ZnSeZnTe strained-layer

  Kobayashi, M., Dosho, S., Imai, A., Kimura, R., Konagai, M. & Takahashi, K., 1988, In: Superlattices and Microstructures. 4, 2, p. 221-225 5 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 57%
  • Electric properties 56%
  • Electrical Property 44%
  • electrical properties 39%
  1 被引用数 (Scopus)

• Effects of indium diffusion on the properties of ZnSe:Mn dc thin-film electroluminescent devices

  Kobayashi, M., Mino, N., Konagai, M. & Takahashi, K., 1985, In: Journal of Applied Physics. 57, 8, p. 2905-2908 4 p.

  研究成果: Article › 査読

  • indium 100%
  • thin films 53%
  • oxides 52%
  • molecular beams 21%
  • grade 20%
  2 被引用数 (Scopus)

• Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

  Nakasu, T., Sun, W., Kobayashi, M. & Asahi, T., 2017 6月 15, In: Journal of Crystal Growth. 468, p. 635-637 3 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Sapphire 86%
  • Optical properties 80%
  • Crystallinity 78%
  6 被引用数 (Scopus)

• Effect of Sodium on the Properties of Ag(In, Ga)Se₂ Thin Films and Solar Cells

  Zhang, X. & Kobayashi, M., 2017 9月, In: IEEE Journal of Photovoltaics. 7, 5, p. 1426-1432 7 p., 7997696.

  研究成果: Article › 査読

  • Solar cells 100%
  • Sodium 97%
  • Thin films 89%
  • sodium 84%
  • Solar Cell 81%
  2 被引用数 (Scopus)

• Doping characteristics of znse-znte strained layer superlattice grown by molecular beam epitaxy

  Kimura, R., Dosho, S., Imai, A., Kobayashi, M., Konagai, M. & Takahashi, K., 1987 8月 11, In: Proceedings of SPIE - The International Society for Optical Engineering. 792, p. 112-116 5 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Zinc Selenide 96%
  • Molecular Beam Epitaxy 94%
  • Molecular beam epitaxy 82%
  • Doping (additives) 59%
  1 被引用数 (Scopus)

• Diffusion profiles of Se in bulk ZnTe

  Kobayashi, M., Terakado, H., Sawada, R., Arakawa, A. & Sato, K., 2002 8月 29, In: Physica Status Solidi (B) Basic Research. 229, 1, p. 265-268 4 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Ternary alloys 42%
  • Substrates 39%
  • Alloy 38%
  • Thermal diffusion 37%
  1 被引用数 (Scopus)

• Design of pseudo-ternary and quaternary alloys by superlattices consisting of (zn,cd)(s,se) binary ii-vi compounds

  Jia, A. W., Kobayashi, M. & Yoshikawa, A., 1995 3月 1, In: Journal of Electronic Materials. 24, 3, p. 117-121 5 p.

  研究成果: Article › 査読

  • Superlattices 100%
  • Ternary alloys 80%
  • quaternary alloys 71%
  • ternary alloys 60%
  • superlattices 50%
  5 被引用数 (Scopus)

• Design of new UV/blue/green light emitters made of hexagonal-phase ZnMgCdOSSe mixed-crystal system fabricated on GaAs- and InP-(111) substrates

  Jia, A., Furushima, T., Kobayashi, M., Kato, Y., Shimotomai, M., Yoshikawa, A. & Takahashi, K., 2000, In: Journal of Crystal Growth. 214, p. 1085-1090 6 p., 625.

  研究成果: Article › 査読

  • Epilayers 100%
  • Light Green 73%
  • mixed crystals 70%
  • Crystals 58%
  • emitters 48%
  9 被引用数 (Scopus)

• Deposition of AgGaTe₂ on sapphire substrates by closed space sublimation

  Uruno, A., Usui, A. & Kobayashi, M., 2013 11月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 11, p. 1389-1392 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • temperature 26%
  • stoichiometry 21%
  • poles 19%
  3 被引用数 (Scopus)

• Defect density reduction in core layer of ZnTe electro-optical waveguide by low lattice mismatched interfaces

  Sun, W. C., Nakusu, T., Odaka, K., Kobayashi, M. & Asahi, T., 2017 7月 1, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 4, 04F104.

  研究成果: Article › 査読

  • Optical waveguides 100%
  • Defect density 96%
  • Cladding 88%
  • Waveguides 68%
  • optical waveguides 66%

• Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy

  Venkatesan, S., Pierret, R. F., Qiu, J., Kobayashi, M., Gunshor, R. L. & Kolodziejski, L. A., 1989 12月 1, In: Journal of Applied Physics. 66, 8, p. 3656-3660 5 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • selenium 44%
  • defects 43%
  • gallium 40%
  • zinc 34%
  20 被引用数 (Scopus)

• Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

  Nakasu, T., Yamashita, S., Aiba, T., Hattori, S., Sun, W., Taguri, K., Kazami, F. & Kobayashi, M., 2014 10月 28, In: Journal of Applied Physics. 116, 16, 163518.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • sapphire 99%
  • crystals 57%
  • thin films 13%
  • optical paths 9%
  14 被引用数 (Scopus)

• Crystallographic Characterization of AgGaTe₂, AgAlTe₂, and Ag(Ga,Al)Te₂ Grown by Closed-Space Sublimation

  Uruno, A., Usui, A., Inoue, T., Takeda, Y. & Kobayashi, M., 2015 9月 26, In: Journal of Electronic Materials. 44, 9, p. 3013-3017 5 p.

  研究成果: Article › 査読

  • Sublimation 100%
  • sublimation 78%
  • Diffraction 76%
  • Sapphire 70%
  • X rays 48%
  7 被引用数 (Scopus)

• Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c -plane sapphire substrates by closed space sublimation

  Uruno, A., Takeda, Y., Inoue, T. & Kobayashi, M., 2016 7月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 13, 7-9, p. 413-416 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • characterization 50%
  • diffraction 36%
  • x rays 20%
  11 被引用数 (Scopus)

• Control of the Nucleation Layers of (110)-Oriented ZnTe Thin Film Growth on r-Plane and S-Plane Sapphire Nanofaceted Substrates

  Kobayashi, S. & Kobayashi, M., 2022, (Accepted/In press) In: Journal of Electronic Materials.

  研究成果: Article › 査読

  • Film growth 100%
  • Sapphire 84%
  • Nucleation 66%
  • Thin films 59%
  • Migration-Enhanced Epitaxy 55%

• Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

  Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Sun, W., Taguri, K., Kazami, F., Kobayashi, M. & Asahi, T., 2015 7月 28, In: Journal of Crystal Growth. 425, p. 191-194 4 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Buffer layers 91%
  • Sapphire 86%
  • molecular beam epitaxy 54%
  13 被引用数 (Scopus)

• Comparison of Ag(In,Ga)Se₂/Mo and Cu(In,Ga)Se₂/Mo Interfaces in Solar Cells

  Zhang, X., Kobayashi, M. & Yamada, A., 2017 5月 17, In: ACS Applied Materials and Interfaces. 9, 19, p. 16215-16220 6 p.

  研究成果: Article › 査読

  • Schottky Contact 100%
  • Ohmic contacts 93%
  • X-Ray Emission Spectrometry 79%
  • Schematic diagrams 70%
  • Structural properties 66%
  29 被引用数 (Scopus)

• Characterization of Ga₂Se₃ at ZnSe/GaAs heterovalent interfaces

  Qiu, J., Menke, D. R., Kobayashi, M., Gunshor, R. L., Li, D., Nakamura, Y. & Otsuka, N., 1991, In: Applied Physics Letters. 58, 24, p. 2788-2790 3 p.

  研究成果: Article › 査読

  • characterization 100%
  • x ray spectroscopy 45%
  • zinc 39%
  • photoelectron spectroscopy 36%
  • nucleation 33%
  27 被引用数 (Scopus)

• Bright electroluminescence from CdS quantum dot LED structures

  Nakamura, S., Kitamura, K., Umeya, H., Jia, A., Kobayashi, M., Yoshikawa, A., Shimotomai, M., Kato, Y. & Takahashi, K., 1998 12月 10, In: Electronics Letters. 34, 25, p. 2435-2436 2 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Electroluminescence 87%
  • Luminescence 81%
  • Light emitting diodes 54%
  • Wavelength 48%
  18 被引用数 (Scopus)

• Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

  Jeon, H., Ding, J., Patterson, W., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M. & Gunshor, R. L., 1991, In: Applied Physics Letters. 59, 27, p. 3619-3621 3 p.

  研究成果: Article › 査読

  • injection lasers 100%
  • quantum wells 60%
  • semiconductor lasers 60%
  • heterojunctions 34%
  • buffers 32%
  521 被引用数 (Scopus)

• Blue and green diode lasers in ZnSe-based quantum wells

  Jeon, H., Ding, J., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C. & Otsuka, N., 1992, In: Applied Physics Letters. 60, 17, p. 2045-2047 3 p.

  研究成果: Article › 査読

  • quantum wells 100%
  • semiconductor lasers 99%
  • room temperature 72%
  • continuous radiation 59%
  • flat surfaces 57%
  158 被引用数 (Scopus)

• Blue and blue/green laser diodes and LED-based display devices

  Xie, W., Grillo, D. C., Kobayashi, M., He, L., Gunshor, R. L., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C. & Otsuka, N., 1993 2月 2, In: Journal of Crystal Growth. 127, 1-4, p. 287-290 4 p.

  研究成果: Article › 査読

  • Semiconductor lasers 100%
  • display devices 89%
  • Light emitting diodes 79%
  • light emitting diodes 64%
  • semiconductor lasers 62%
  8 被引用数 (Scopus)