年別の研究成果
年別の研究成果
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Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures
Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1992, In: Applied Physics Letters. 60, 4, p. 463-465 3 p.研究成果: Article › 査読
61 被引用数 (Scopus) -
Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor
Otsuka, N., Li, D., Qiu, J., Kobayashi, M. & Gunshor, R. L., 1990, In: Materials Transactions, JIM. 31, 7, p. 622-627 6 p.研究成果: Article › 査読
Open Access2 被引用数 (Scopus) -
Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation
Yamaguchi, K., Qin, Z., Nagano, H., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1997 10月 15, In: Japanese Journal of Applied Physics, Part 2: Letters. 36, 10 SUPPL. B, p. L1367-L1369研究成果: Article › 査読
17 被引用数 (Scopus) -
Atomically-Flat GaAs(001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN
Qin, Z., Jia, A., Kobayashi, M. & Yoshikawa, A., 1998 11月, In: Shinku/Journal of the Vacuum Society of Japan. 41, 11, p. 950-954 5 p.研究成果: Article › 査読
Open Access -
Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN
Nagano, H., Qin, Z., Jia, A., Kato, Y., Kobayashi, M., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 265-269 5 p.研究成果: Article › 査読
11 被引用数 (Scopus) -
An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces
Menke, D. R., Qiu, J., Gunshor, R. L., Kobayashi, M., Li, D., Nakamura, Y. & Otsuka, N., 1991 7月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9, 4, p. 2171-2175 5 p.研究成果: Article › 査読
22 被引用数 (Scopus) -
A new in-situ optical probing method for the surface reaction in photo-excited heteroepitaxy of compound semiconductors
Yoshikawa, A., Kobayashi, M. & Tokita, S., 1994 5月 2, In: Applied Surface Science. 79-80, C, p. 416-421 6 p.研究成果: Article › 査読
4 被引用数 (Scopus) -
Al and N co-doped ZnTe Layers Grown by MBE
Ichiba, A. & Kobayashi, M., 2007 4月, In: Journal of Crystal Growth. 301-302, SPEC. ISS., p. 285-288 4 p.研究成果: Article › 査読
5 被引用数 (Scopus) -
Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma
Tosaka, H., Nagatake, T., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 12月, In: Japanese journal of applied physics. 32, 12 A, p. L1722-L1724研究成果: Article › 査読
1 被引用数 (Scopus) -
(211) oriented ZnTe growth on m-plane sapphire by MBE
Nakasu, T., Kobayashi, M., Togo, H. & Asahi, T., 2013 11月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 11, p. 1381-1384 4 p.研究成果: Article › 査読
9 被引用数 (Scopus) -
(211)-oriented domain formation during growth of ZnTe on m-plane sapphire by MBE
Nakasu, T., Kobayashi, M., Togo, H. & Asahi, T., 2014 4月, In: Journal of Electronic Materials. 43, 4, p. 921-925 5 p.研究成果: Article › 査読
9 被引用数 (Scopus)