年単位の研究成果
フィンガープリント Takashi Ohsawaが有効な場合、研究トピックを掘り下げます。このトピックラベルは、この人物の業績からのものです。これらはともに一意のフィンガープリントを構成します。
- 3 同様のプロファイル
研究成果
Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies
Shang, Y. & Ohsawa, T., 2019 4, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804668. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).研究成果: Conference contribution
Cell array design with row-driven source line in block shunt architecture applicable to future 6f2 1t1mtj memory
Huang, T. & Ohsawa, T., 2019 4, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804671. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).研究成果: Conference contribution
Co-design of DNN model optimization for binary ReRAM array in-memory processing
Guan, Y. & Ohsawa, T., 2019 5, 2019 IEEE 11th International Memory Workshop, IMW 2019. Institute of Electrical and Electronics Engineers Inc., 8739722. (2019 IEEE 11th International Memory Workshop, IMW 2019).研究成果: Conference contribution
User-friendly compact model of magnetic tunnel junctions for circuit simulation based on switching probability
Liu, H. & Ohsawa, T., 2019 4, 2019 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019. Institute of Electrical and Electronics Engineers Inc., 8741646. (2019 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019).研究成果: Conference contribution
A new read scheme for high-density emerging memories
Ohsawa, T., 2018 6 1, ： : IEICE Transactions on Electronics. E101C, 6, p. 423-429 7 p.研究成果: Article