検索結果
2022
Static random access storage
100%
Leakage currents
96%
leakage
74%
Transistors
51%
cells
48%
2021
Tunnel junctions
100%
SPICE
76%
Simulation
44%
Models (Physical)
32%
Circuit simulation
32%
2020
Magnetoresistance
100%
Simulation
45%
Mirrors
44%
Data storage equipment
44%
Tunnels
24%
RRAM
100%
Deep neural networks
69%
Voltage
51%
Data storage equipment
43%
Computer hardware
20%
2018
Error
100%
Resistance
84%
Data storage equipment
80%
Dynamic random access storage
51%
RRAM
31%
2015
Koike, H. ,
Ohsawa, T. ,
Miura, S. ,
Honjo, H. ,
Ikeda, S. ,
Hanyu, T. ,
Ohno, H. &
Endoh, T. ,
2015 4月 1 ,
In: Japanese journal of applied physics. 54 ,
4 , 04DE08.
研究成果: Article › 査読
sleep
100%
microprocessors
89%
Sleep
78%
controllers
75%
education
72%
2014
Ohsawa, T. ,
Ikeda, S. ,
Hanyu, T. ,
Ohno, H. &
Endoh, T. ,
2014 4月 ,
In: Japanese journal of applied physics. 53 ,
4 SPEC. ISSUE , 04ED03.
研究成果: Article › 査読
Tunnel junctions
100%
tunnel junctions
73%
torque
66%
Transistors
60%
transistors
56%
Ohsawa, T. ,
Ikeda, S. ,
Hanyu, T. ,
Ohno, H. &
Endoh, T. ,
2014 4月 ,
In: Japanese journal of applied physics. 53 ,
4 SPEC. ISSUE , 04ED04.
研究成果: Article › 査読
Cache memory
100%
random access memory
90%
torque
73%
Torque
57%
Data storage equipment
47%
Ohsawa, T. ,
Ikeda, S. ,
Hanyu, T. ,
Ohno, H. &
Endoh, T. ,
2014 5月 7 ,
In: Journal of Applied Physics. 115 ,
17 , 17C728.
研究成果: Article › 査読
latches
100%
tunnel junctions
68%
metal oxide semiconductors
68%
threshold voltage
63%
tunnels
62%
Koike, H. ,
Ohsawa, T. ,
Miura, S. ,
Honjo, H. ,
Ikeda, S. ,
Hanyu, T. ,
Ohno, H. &
Endoh, T. ,
2014 4月 ,
In: Japanese journal of applied physics. 53 ,
4 SPEC. ISSUE , 04ED13.
研究成果: Article › 査読
Tunnel junctions
100%
margins
77%
tunnel junctions
73%
torque
66%
chips
56%
2013
Ohsawa, T. ,
Koike, H. ,
Miura, S. ,
Honjo, H. ,
Kinoshita, K. ,
Ikeda, S. ,
Hanyu, T. ,
Ohno, H. &
Endoh, T. ,
2013 ,
In: IEEE Journal of Solid-State Circuits. 48 ,
6 ,
p. 1511-1520 10 p. , 6495490.
研究成果: Article › 査読
Macros
100%
Static random access storage
82%
Data storage equipment
67%
Tunnel junctions
51%
Transistors
31%
2012
Ohsawa, T. ,
Iga, F. ,
Ikeda, S. ,
Hanyu, T. ,
Ohno, H. &
Endoh, T. ,
2012 2月 1 ,
In: Japanese journal of applied physics. 51 ,
2 PART 2 , 02BD01.
研究成果: Article › 査読
Tunnel junctions
100%
random access memory
82%
tunnel junctions
73%
torque
66%
Transistors
60%
Electric power utilization
100%
Tunnel junctions
95%
Tunnel junctions
100%
Semiconductor counters
94%
tunnel junctions
73%
counters
62%
scaling
49%
2011
Ohsawa, T. ,
Hatsuda, K. ,
Fujita, K. ,
Matsuoka, F. &
Higashi, T. ,
2011 9月 ,
In: IEEE Journal of Solid-State Circuits. 46 ,
9 ,
p. 2148-2157 10 p. , 5783952.
研究成果: Article › 査読
Data storage equipment
100%
2010
Hamamoto, T. ,
Fukuzumi, Y. ,
Higashi, T. ,
Nakajima, H. ,
Minami, Y. ,
Shino, T. ,
Ohsawa, T. &
Nitayama, A. ,
2010 8月 1 ,
In: IEEE Transactions on Electron Devices. 57 ,
8 ,
p. 1781-1788 8 p. , 5484457.
研究成果: Article › 査読
Silicides
100%
Silicon
57%
Liquid Film
35%
Reduction
33%
Logic devices
31%
2009
Ohsawa, T. ,
Fukuda, R. ,
Higashi, T. ,
Fujita, K. ,
Matsuoka, F. ,
Shino, T. ,
Furuhashi, H. ,
Minami, Y. ,
Nakajima, H. ,
Hamamoto, T. ,
Watanabe, Y. ,
Nitayama, A. &
Furuyama, T. ,
2009 ,
In: IEEE Transactions on Electron Devices. 56 ,
10 ,
p. 2302-2311 10 p. 研究成果: Article › 査読
Impact Ionization
100%
Impact ionization
88%
Static random access storage
63%
Charge Pumping
57%
Tunneling Current
43%
Random access storage
100%
floating
90%
Data storage equipment
55%
cells
49%
Transistors
19%
2007
Hamamoto, T. ,
Minami, Y. ,
Shino, T. ,
Kusunoki, N. ,
Nakajima, H. ,
Morikado, M. ,
Yamada, T. ,
Inoh, K. ,
Sakamoto, A. ,
Higashi, T. ,
Fujita, K. ,
Hatsuda, K. ,
Ohsawa, T. &
Nitayama, A. ,
2007 3月 ,
In: IEEE Transactions on Electron Devices. 54 ,
3 ,
p. 563-571 9 p. 研究成果: Article › 査読
Dynamic random access storage
100%
Electric Field
77%
Scalability
69%
Dimension
65%
Voltage
62%
2006
Ohsawa, T. ,
Fujita, K. ,
Hatsuda, K. ,
Higashi, T. ,
Shino, T. ,
Minami, Y. ,
Nakajima, H. ,
Morikado, M. ,
Inoh, K. ,
Hamamoto, T. ,
Watanabe, S. ,
Fujii, S. &
Furuyama, T. ,
2006 1月 ,
In: IEEE Journal of Solid-State Circuits. 41 ,
1 ,
p. 135-145 11 p. 研究成果: Article › 査読
Dynamic random access storage
100%
Static random access storage
32%
Redundancy
24%
2005
Shino, T. ,
Ohsawa, T. ,
Higashi, T. ,
Fujita, K. ,
Kusunoki, N. ,
Minami, Y. ,
Morikado, M. ,
Nakajima, H. ,
Inoh, K. ,
Hamamoto, T. &
Nitayama, A. ,
2005 10月 ,
In: IEEE Transactions on Electron Devices. 52 ,
10 ,
p. 2220-2225 6 p. 研究成果: Article › 査読
Threshold voltage
100%
Voltage
65%
Data storage equipment
55%
Electric potential
46%
Impurities
35%
2002
Ohsawa, T. ,
Fujita, K. ,
Higashi, T. ,
Iwata, Y. ,
Kajiyama, T. ,
Asao, Y. &
Sunouchi, K. ,
2002 11月 ,
In: IEEE Journal of Solid-State Circuits. 37 ,
11 ,
p. 1510-1522 13 p. 研究成果: Article › 査読
Transistors
100%
Data storage equipment
71%
Computer hardware
34%
Temperature
23%
1996
Inaba, T. ,
Takashima, D. ,
Oowaki, Y. ,
Ozaklt, T. ,
Watanabe, S. ,
Ohsawa, T. ,
Ohuchi, K. &
Tango, H. ,
1996 1月 1 ,
In: IEICE Transactions on Electronics. E79-C ,
12 ,
p. 1699-1705 7 p. 研究成果: Article › 査読
Dissipation
100%
Capacitor
93%
Voltage
66%
Dynamic random access storage
63%
Data storage equipment
22%
1991
Kushiyama, N. ,
Watanabe, Y. ,
Ohsawa, T. ,
Muraoka, K. ,
Furuyama, T. &
Nagahama, Y. ,
1991 4月 ,
In: IEEE Journal of Solid-State Circuits. 26 ,
4 ,
p. 479-483 5 p. 研究成果: Article › 査読
Dynamic random access storage
100%
Pipelines
65%
1989
Watanabe, Y. ,
Ohsawa, T. ,
Sakurai, K. &
Furuyama, T. ,
1989 8月 ,
In: IEEE Journal of Solid-State Circuits. 24 ,
4 ,
p. 905-910 6 p. 研究成果: Article › 査読
Delay circuits
100%
Dynamic random access storage
83%
Computer peripheral equipment
31%
Networks (circuits)
26%
Capacitance
20%
Furuyama, T. ,
Ohsawa, T. ,
Watanabe, Y. ,
Muraoka, K. ,
Natori, K. ,
Nagahama, Y. ,
Kimura, T. &
Tanaka, H. ,
1989 4月 ,
In: IEEE Journal of Solid-State Circuits. 24 ,
2 ,
p. 388-393 6 p. 研究成果: Article › 査読
Dynamic random access storage
100%
Random access storage
94%
Defects
59%
Data storage equipment
52%
1987
Ohsawa, T. ,
Furuyama, T. ,
Watanabe, Y. ,
Tanaka, H. ,
Natori, K. ,
Shinozaki, S. ,
Tanaka, T. ,
Yamano, S. ,
Nagahama, Y. ,
Kushiyama, N. &
Tsuchida, K. ,
1987 10月 ,
In: IEEE Journal of Solid-State Circuits. 22 ,
5 ,
p. 663-668 6 p. 研究成果: Article › 査読
Built-in self test
100%
Dynamic random access storage
93%
Random access storage
44%
Capacitance
34%
Metals
25%
Furuyama, T. ,
Watanabe, Y. ,
Ohsawa, T. &
Watanabe, S. ,
1987 6月 ,
In: IEEE Journal of Solid-State Circuits. 22 ,
3 ,
p. 437-441 5 p. 研究成果: Article › 査読
Dynamic random access storage
100%
Random access storage
47%
Electric potential
44%
Transistors
36%
Voltage regulators
25%
1986
Furuyama, T. ,
Ohsawa, T. ,
Watanabe, Y. ,
Ishiuchi, H. ,
Watanabe, T. ,
Tanaka, T. ,
Natori, K. &
Ozawa, O. ,
1986 10月 ,
In: IEEE Journal of Solid-State Circuits. 21 ,
5 ,
p. 605-611 7 p. 研究成果: Article › 査読
Dynamic random access storage
100%
Random access storage
94%
Masks
81%
Hot carriers
57%
Capacitors
34%
1983
light ions
100%
light beams
82%
ion beams
64%
electron plasma
61%
fluids
48%
light ions
100%
light beams
82%
ion beams
64%
electron plasma
61%
beam currents
57%
1980
coupled modes
100%
quenching
84%
nonlinear equations
19%
locking
19%
field strength
18%
1979
electron beams
100%
Mathieu function
96%
vlasov equations
91%
oscillations
88%
electron plasma
78%