γ/4-Shifted InGaAsP/InP DFB Lasers

Katsuyuki Utaka, Shigeyuki Akiba, Kazuo Sakai, Yuichi Matsushima

研究成果: Article査読

112 被引用数 (Scopus)

抄録

/4-shifted InGaAsP/InP DFB lasers were studied theoretically and experimentally. The effect of reflectivities at the end of a DFB region and that of a γ/4-shift position were analyzed in terms of stability of single-longitudinal-mode operation and asymmetric power distribution. The shift of the γ/4-shift position from the center to a certain place in the DFB region, with the end reflectivities less than several tenths of a percent, seemed most effective for efficient power extraction and reproducible DSM operation. The devices emitting at 1.5 μm range were fabricated by using negative and positive photoresists and employing one-step holographic exposure. They exhibited single-longitudinal-mode operations just at or closely around the center of the stopband, i.e., the Bragg wavelength. The slight wavelength deviations from the center were found to be attributed to the accidental phase-shift variations from the optimal value. Concerning such deviations in the fabricated devices, a simple and useful criterion, for example, P0/P1≥ 2–3 at I/Ith = 0.9, for stable DSM operation was presented. Statistically, single-longitudinal-mode operations were observed in 95 devices out of 100, and the theoretical prediction was verified. The side-mode-suppression ratios under high-speed direct modulation were 35 dB or more.

本文言語English
ページ(範囲)1042-1051
ページ数10
ジャーナルIEEE Journal of Quantum Electronics
22
7
DOI
出版ステータスPublished - 1986 7月
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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