λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima

研究成果: Article査読

81 被引用数 (Scopus)

抄録

λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.

本文言語English
ページ(範囲)1008-1010
ページ数3
ジャーナルElectronics Letters
20
24
DOI
出版ステータスPublished - 1984 11 22
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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