抄録
We have developed the novel 0.15μm CMOS processes for high performance and high reliability, consisting of mixing the CoSi2/Si interface using Si+ implantation to form shallow junctions, nitrogen implantation into gate electrodes to improve the oxide reliability, and selective channel implantation using a gate-around mask to reduce the junction capacitance. By using those processes, the propagation delay time of 21 psec/stage was obtained for 0.15μm CMOS ring oscillator at the allowable maximum supply voltage of 2.0 V limited by hot-carrier degradation.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 67-70 |
| ページ数 | 4 |
| ジャーナル | Technical Digest - International Electron Devices Meeting |
| 出版ステータス | Published - 1994 12 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA 継続期間: 1994 12 11 → 1994 12 14 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry