0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami, Yuichi Matsushima

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.

元の言語English
ホスト出版物のタイトルConference Digest - IEEE International Semiconductor Laser Conference
出版者IEEE
ページ137-138
ページ数2
出版物ステータスPublished - 1994
外部発表Yes
イベントProceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA
継続期間: 1994 9 191994 9 23

Other

OtherProceedings of the 1994 14th International Semiconductor Laser Conference
Maui, HI, USA
期間94/9/1994/9/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • これを引用

    Usami, M., & Matsushima, Y. (1994). 0.98μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. : Conference Digest - IEEE International Semiconductor Laser Conference (pp. 137-138). IEEE.